JPS5578525A - Vapor phase epitaxial growth - Google Patents
Vapor phase epitaxial growthInfo
- Publication number
- JPS5578525A JPS5578525A JP15327878A JP15327878A JPS5578525A JP S5578525 A JPS5578525 A JP S5578525A JP 15327878 A JP15327878 A JP 15327878A JP 15327878 A JP15327878 A JP 15327878A JP S5578525 A JPS5578525 A JP S5578525A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- inlet
- outlets
- vapor phase
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To form a homogeneous epitaxial layer by a method wherein at least two outlets through which exhausting of fed gas are provided on a reaction tube for which a temperature inclination is set longitudinally, and a gas flow distribution is regulated through controlling the quantity of exhaust gas coming out thereof.
CONSTITUTION: A semi-insulated Ga As substrate 5 on which to laminate epitaxial layer and Ga source are installed on a reaction tube 1. There are provided on the tube 1 a carrier gas inlet 2, an inlet 3 for the carrier gas containing a reaction gas like AsCl2, and outlets 7, 8 provided with regulators 17, 18, and further provided are an inlet 9 for a gas curtain by hydrogen gas or nitrogen gas to check counterflow according to the fed gas temperature drop and a regulator 19.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15327878A JPS5578525A (en) | 1978-12-11 | 1978-12-11 | Vapor phase epitaxial growth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15327878A JPS5578525A (en) | 1978-12-11 | 1978-12-11 | Vapor phase epitaxial growth |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5578525A true JPS5578525A (en) | 1980-06-13 |
Family
ID=15558964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15327878A Pending JPS5578525A (en) | 1978-12-11 | 1978-12-11 | Vapor phase epitaxial growth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5578525A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254734A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Decompression device |
-
1978
- 1978-12-11 JP JP15327878A patent/JPS5578525A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60254734A (en) * | 1984-05-31 | 1985-12-16 | Fujitsu Ltd | Decompression device |
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