JPS5578525A - Vapor phase epitaxial growth - Google Patents

Vapor phase epitaxial growth

Info

Publication number
JPS5578525A
JPS5578525A JP15327878A JP15327878A JPS5578525A JP S5578525 A JPS5578525 A JP S5578525A JP 15327878 A JP15327878 A JP 15327878A JP 15327878 A JP15327878 A JP 15327878A JP S5578525 A JPS5578525 A JP S5578525A
Authority
JP
Japan
Prior art keywords
gas
inlet
outlets
vapor phase
epitaxial growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15327878A
Other languages
Japanese (ja)
Inventor
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15327878A priority Critical patent/JPS5578525A/en
Publication of JPS5578525A publication Critical patent/JPS5578525A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a homogeneous epitaxial layer by a method wherein at least two outlets through which exhausting of fed gas are provided on a reaction tube for which a temperature inclination is set longitudinally, and a gas flow distribution is regulated through controlling the quantity of exhaust gas coming out thereof.
CONSTITUTION: A semi-insulated Ga As substrate 5 on which to laminate epitaxial layer and Ga source are installed on a reaction tube 1. There are provided on the tube 1 a carrier gas inlet 2, an inlet 3 for the carrier gas containing a reaction gas like AsCl2, and outlets 7, 8 provided with regulators 17, 18, and further provided are an inlet 9 for a gas curtain by hydrogen gas or nitrogen gas to check counterflow according to the fed gas temperature drop and a regulator 19.
COPYRIGHT: (C)1980,JPO&Japio
JP15327878A 1978-12-11 1978-12-11 Vapor phase epitaxial growth Pending JPS5578525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15327878A JPS5578525A (en) 1978-12-11 1978-12-11 Vapor phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15327878A JPS5578525A (en) 1978-12-11 1978-12-11 Vapor phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5578525A true JPS5578525A (en) 1980-06-13

Family

ID=15558964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15327878A Pending JPS5578525A (en) 1978-12-11 1978-12-11 Vapor phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5578525A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254734A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Decompression device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60254734A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Decompression device

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