JPS5358487A - Decompressive gas phase reaction apparatus - Google Patents

Decompressive gas phase reaction apparatus

Info

Publication number
JPS5358487A
JPS5358487A JP13395476A JP13395476A JPS5358487A JP S5358487 A JPS5358487 A JP S5358487A JP 13395476 A JP13395476 A JP 13395476A JP 13395476 A JP13395476 A JP 13395476A JP S5358487 A JPS5358487 A JP S5358487A
Authority
JP
Japan
Prior art keywords
gas phase
decompressive
reaction apparatus
phase reaction
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13395476A
Other languages
Japanese (ja)
Inventor
Mitsuru Ura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13395476A priority Critical patent/JPS5358487A/en
Publication of JPS5358487A publication Critical patent/JPS5358487A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To improve the precision for controlling the concentration of each component and the reproducibility of the gas phase grown film, by equipping the gas concentratration analyzer and the pressure control valve in the passage for supplying raw material gases at the decompressive gas phase reaction apparatus for forming the phase grown film on the semiconductor substrate.
JP13395476A 1976-11-08 1976-11-08 Decompressive gas phase reaction apparatus Pending JPS5358487A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13395476A JPS5358487A (en) 1976-11-08 1976-11-08 Decompressive gas phase reaction apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13395476A JPS5358487A (en) 1976-11-08 1976-11-08 Decompressive gas phase reaction apparatus

Publications (1)

Publication Number Publication Date
JPS5358487A true JPS5358487A (en) 1978-05-26

Family

ID=15116950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13395476A Pending JPS5358487A (en) 1976-11-08 1976-11-08 Decompressive gas phase reaction apparatus

Country Status (1)

Country Link
JP (1) JPS5358487A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152738A (en) * 1980-04-25 1981-11-26 Mitsubishi Electric Corp Vapor deposition device using decreased pressure
JPS5827637A (en) * 1981-08-11 1983-02-18 Toshiba Corp Gas supply circuit in gas pahse growing furnace
JPS58123866A (en) * 1982-01-14 1983-07-23 Agency Of Ind Science & Technol Vapor phase plating
JPS5959877A (en) * 1982-09-30 1984-04-05 Fujitsu Ltd Chemical vapor growth method
JPS61163279A (en) * 1985-01-09 1986-07-23 Nec Corp Cvd apparatus
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPS6424320A (en) * 1987-07-20 1989-01-26 Anelva Corp Superconductive thin film forming device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56152738A (en) * 1980-04-25 1981-11-26 Mitsubishi Electric Corp Vapor deposition device using decreased pressure
JPS5827637A (en) * 1981-08-11 1983-02-18 Toshiba Corp Gas supply circuit in gas pahse growing furnace
JPS58123866A (en) * 1982-01-14 1983-07-23 Agency Of Ind Science & Technol Vapor phase plating
JPS6123869B2 (en) * 1982-01-14 1986-06-07 Kogyo Gijutsuin
JPS5959877A (en) * 1982-09-30 1984-04-05 Fujitsu Ltd Chemical vapor growth method
JPS61163279A (en) * 1985-01-09 1986-07-23 Nec Corp Cvd apparatus
JPH0465146B2 (en) * 1985-01-09 1992-10-19 Nippon Electric Co
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPS6424320A (en) * 1987-07-20 1989-01-26 Anelva Corp Superconductive thin film forming device

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