JPS5263669A - Device for production of semiconductors - Google Patents

Device for production of semiconductors

Info

Publication number
JPS5263669A
JPS5263669A JP13951075A JP13951075A JPS5263669A JP S5263669 A JPS5263669 A JP S5263669A JP 13951075 A JP13951075 A JP 13951075A JP 13951075 A JP13951075 A JP 13951075A JP S5263669 A JPS5263669 A JP S5263669A
Authority
JP
Japan
Prior art keywords
line
semiconductors
production
downstream
flowing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13951075A
Other languages
Japanese (ja)
Inventor
Toshiyuki Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13951075A priority Critical patent/JPS5263669A/en
Publication of JPS5263669A publication Critical patent/JPS5263669A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain a device suitable for vapor phase epitaxial growth by providing two flow lines on the downstream of a reaction region, flowing H2 in one line, exhausting reaction gas from the other line and increasing the pressure within the first line.
JP13951075A 1975-11-20 1975-11-20 Device for production of semiconductors Pending JPS5263669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13951075A JPS5263669A (en) 1975-11-20 1975-11-20 Device for production of semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13951075A JPS5263669A (en) 1975-11-20 1975-11-20 Device for production of semiconductors

Publications (1)

Publication Number Publication Date
JPS5263669A true JPS5263669A (en) 1977-05-26

Family

ID=15246967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13951075A Pending JPS5263669A (en) 1975-11-20 1975-11-20 Device for production of semiconductors

Country Status (1)

Country Link
JP (1) JPS5263669A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60193323A (en) * 1984-03-15 1985-10-01 Nec Corp Semiconductor vapor phase growing apparatus
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
FR2623524A1 (en) * 1987-11-20 1989-05-26 Lami Philippe Improvement to the process and device for metal deposition on a sample

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4651673A (en) * 1982-09-02 1987-03-24 At&T Technologies, Inc. CVD apparatus
JPS60193323A (en) * 1984-03-15 1985-10-01 Nec Corp Semiconductor vapor phase growing apparatus
FR2623524A1 (en) * 1987-11-20 1989-05-26 Lami Philippe Improvement to the process and device for metal deposition on a sample

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