JPS5513989A - Apparatus for vapor phase epitaxial growth - Google Patents

Apparatus for vapor phase epitaxial growth

Info

Publication number
JPS5513989A
JPS5513989A JP8784578A JP8784578A JPS5513989A JP S5513989 A JPS5513989 A JP S5513989A JP 8784578 A JP8784578 A JP 8784578A JP 8784578 A JP8784578 A JP 8784578A JP S5513989 A JPS5513989 A JP S5513989A
Authority
JP
Japan
Prior art keywords
vapor
growing chamber
epitaxial layer
materials
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8784578A
Other languages
Japanese (ja)
Other versions
JPS6056282B2 (en
Inventor
Masao Mikami
Chuji Igarashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP53087845A priority Critical patent/JPS6056282B2/en
Publication of JPS5513989A publication Critical patent/JPS5513989A/en
Publication of JPS6056282B2 publication Critical patent/JPS6056282B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the uniform depth of the oxide epitaxial layer by introducing the material vapor and oxygen gas into the growing chamber and colliding them at the same time.
CONSTITUTION: In a growing chamber 14 located is a substrate holder 16, on which a monocrystal wafer 15 is laid. High volatile chemical compounds 11 and 12 consisted of the desired component element are located in a materials chamber 13 and the vapor produced by heating and evaporating them is introduced into the growing chamber 14 through a bypassing pipe 18 with carriergas. This materials vapor collides head-on against hydrogen gas introduced through a hydrogen transporting tube 17 at their injection point in the growing chamber 14. This causes a turbulent flow where the materials vapor and the hydrogen gas are mixed uniformly and the turbulent flow is sent to the downstream to develop the growth of the epitaxial layer on the monocrystal wafer 15. This enables to obtain the oxide epitaxial layer having uniform depth in wider area.
COPYRIGHT: (C)1980,JPO&Japio
JP53087845A 1978-07-18 1978-07-18 Vapor phase epitaxial growth equipment Expired JPS6056282B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53087845A JPS6056282B2 (en) 1978-07-18 1978-07-18 Vapor phase epitaxial growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53087845A JPS6056282B2 (en) 1978-07-18 1978-07-18 Vapor phase epitaxial growth equipment

Publications (2)

Publication Number Publication Date
JPS5513989A true JPS5513989A (en) 1980-01-31
JPS6056282B2 JPS6056282B2 (en) 1985-12-09

Family

ID=13926221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53087845A Expired JPS6056282B2 (en) 1978-07-18 1978-07-18 Vapor phase epitaxial growth equipment

Country Status (1)

Country Link
JP (1) JPS6056282B2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119299A (en) * 1974-03-06 1975-09-18
JPS5225297A (en) * 1975-08-01 1977-02-25 Nec Corp Vapor epitaxial manufacturing device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50119299A (en) * 1974-03-06 1975-09-18
JPS5225297A (en) * 1975-08-01 1977-02-25 Nec Corp Vapor epitaxial manufacturing device

Also Published As

Publication number Publication date
JPS6056282B2 (en) 1985-12-09

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