JPS5513989A - Apparatus for vapor phase epitaxial growth - Google Patents
Apparatus for vapor phase epitaxial growthInfo
- Publication number
- JPS5513989A JPS5513989A JP8784578A JP8784578A JPS5513989A JP S5513989 A JPS5513989 A JP S5513989A JP 8784578 A JP8784578 A JP 8784578A JP 8784578 A JP8784578 A JP 8784578A JP S5513989 A JPS5513989 A JP S5513989A
- Authority
- JP
- Japan
- Prior art keywords
- vapor
- growing chamber
- epitaxial layer
- materials
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain the uniform depth of the oxide epitaxial layer by introducing the material vapor and oxygen gas into the growing chamber and colliding them at the same time.
CONSTITUTION: In a growing chamber 14 located is a substrate holder 16, on which a monocrystal wafer 15 is laid. High volatile chemical compounds 11 and 12 consisted of the desired component element are located in a materials chamber 13 and the vapor produced by heating and evaporating them is introduced into the growing chamber 14 through a bypassing pipe 18 with carriergas. This materials vapor collides head-on against hydrogen gas introduced through a hydrogen transporting tube 17 at their injection point in the growing chamber 14. This causes a turbulent flow where the materials vapor and the hydrogen gas are mixed uniformly and the turbulent flow is sent to the downstream to develop the growth of the epitaxial layer on the monocrystal wafer 15. This enables to obtain the oxide epitaxial layer having uniform depth in wider area.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53087845A JPS6056282B2 (en) | 1978-07-18 | 1978-07-18 | Vapor phase epitaxial growth equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP53087845A JPS6056282B2 (en) | 1978-07-18 | 1978-07-18 | Vapor phase epitaxial growth equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5513989A true JPS5513989A (en) | 1980-01-31 |
JPS6056282B2 JPS6056282B2 (en) | 1985-12-09 |
Family
ID=13926221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP53087845A Expired JPS6056282B2 (en) | 1978-07-18 | 1978-07-18 | Vapor phase epitaxial growth equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6056282B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50119299A (en) * | 1974-03-06 | 1975-09-18 | ||
JPS5225297A (en) * | 1975-08-01 | 1977-02-25 | Nec Corp | Vapor epitaxial manufacturing device |
-
1978
- 1978-07-18 JP JP53087845A patent/JPS6056282B2/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50119299A (en) * | 1974-03-06 | 1975-09-18 | ||
JPS5225297A (en) * | 1975-08-01 | 1977-02-25 | Nec Corp | Vapor epitaxial manufacturing device |
Also Published As
Publication number | Publication date |
---|---|
JPS6056282B2 (en) | 1985-12-09 |
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