JPS54109767A - Forming method of amorphous semiconductor layer - Google Patents

Forming method of amorphous semiconductor layer

Info

Publication number
JPS54109767A
JPS54109767A JP1674978A JP1674978A JPS54109767A JP S54109767 A JPS54109767 A JP S54109767A JP 1674978 A JP1674978 A JP 1674978A JP 1674978 A JP1674978 A JP 1674978A JP S54109767 A JPS54109767 A JP S54109767A
Authority
JP
Japan
Prior art keywords
gas
specific resistance
amorphous semiconductor
tube
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1674978A
Other languages
Japanese (ja)
Other versions
JPS6225250B2 (en
Inventor
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1674978A priority Critical patent/JPS54109767A/en
Publication of JPS54109767A publication Critical patent/JPS54109767A/en
Publication of JPS6225250B2 publication Critical patent/JPS6225250B2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: To prevent the atom mixture from the substrate caused by spattering at the discharging time and thus to obtain a low specific resistance amorphous layer in an easy way by providing the high specific resistance amorphous layer previously when the low specific resistance layer of the amorphous semiconductor is vapor- grown on the substrate with the fixed amount of energy.
CONSTITUTION: Substrate 1 of quartz or the like is put on the stage which is provided within quartz reaction tube 2 and incorporates heater 3, and kept at the temperatures up to 500°C. Then SiH4 gas, the doping gas of PH3 or B2H6 and the Ar gas to facilitate the discharge are mixed together through guide tube 4 at the upper part of tube 2. The mixture gas is then flowed into tube 2 while measuring the degree of vacuum via gauge 6 to produce the gas exciting magnetic field via the RF coil outside tube 2. In such way, the amorphous semiconductor layer is grown on substrate 1. In this case, the high specific resistance amorphous semiconductor layer 7 is coated before mixing the doping gas. After this, the fixed doping gas is mixed to grow low specific resistance N- or P-type amorphous semiconductor layer 7.
COPYRIGHT: (C)1979,JPO&Japio
JP1674978A 1978-02-16 1978-02-16 Forming method of amorphous semiconductor layer Granted JPS54109767A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1674978A JPS54109767A (en) 1978-02-16 1978-02-16 Forming method of amorphous semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1674978A JPS54109767A (en) 1978-02-16 1978-02-16 Forming method of amorphous semiconductor layer

Publications (2)

Publication Number Publication Date
JPS54109767A true JPS54109767A (en) 1979-08-28
JPS6225250B2 JPS6225250B2 (en) 1987-06-02

Family

ID=11924907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1674978A Granted JPS54109767A (en) 1978-02-16 1978-02-16 Forming method of amorphous semiconductor layer

Country Status (1)

Country Link
JP (1) JPS54109767A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738125A (en) * 1980-05-19 1995-02-07 Energy Conversion Devices Inc Method and apparatus for manufacturing solar cell, method and chamber for depositing amorphous silicon

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102443301B1 (en) 2021-11-25 2022-09-16 주식회사 파트리지시스템즈 Adaptive data processing system for processing various data and method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738125A (en) * 1980-05-19 1995-02-07 Energy Conversion Devices Inc Method and apparatus for manufacturing solar cell, method and chamber for depositing amorphous silicon

Also Published As

Publication number Publication date
JPS6225250B2 (en) 1987-06-02

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