JPS5629337A - Formation of silicon nitride film - Google Patents

Formation of silicon nitride film

Info

Publication number
JPS5629337A
JPS5629337A JP10463679A JP10463679A JPS5629337A JP S5629337 A JPS5629337 A JP S5629337A JP 10463679 A JP10463679 A JP 10463679A JP 10463679 A JP10463679 A JP 10463679A JP S5629337 A JPS5629337 A JP S5629337A
Authority
JP
Japan
Prior art keywords
substrate
ultraviolet rays
far ultraviolet
gas
excited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10463679A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10463679A priority Critical patent/JPS5629337A/en
Publication of JPS5629337A publication Critical patent/JPS5629337A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enable formation of an Si3N4 film at low temperature and fast speed by heating an Si substrate is reaction gas excited by far ultraviolet rays of specific wavelength and forming the film on the substrate. CONSTITUTION:A susceptor 6 for retaining an Si substrate 5 to be treated is placed on a resistance heaating plate 4 in a reaction chamber 3, and far ultraviolet rays of 1849Angstrom and 1235Angstrom are then irradiated through the wall of the reaction chamber 3 while flowing NH3 gas from a gas guide tube 1 into the chamber 3. Then, the plate 4 is raised at temperature to heat the substrate 5. In this state the gas is excited to NH2 and H by the far ultraviolet rays having a wavelength of 1849Angstrom , and NH2 is excited by the far ultraviolet rays having a wavelength of 1235Angstrom to produce activated nitrigen atoms. Subsequently, the activated nitrogen atoms and the substrate 5 are reacted to form an Si3N4 film on the substrate 5. Since this reaction is shortened at lower temperature by approx. 200 deg.C as compared with the conventional method and 1/2-1/4 in forming time, defects to be produced on the substrate may be largely reduced.
JP10463679A 1979-08-17 1979-08-17 Formation of silicon nitride film Pending JPS5629337A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10463679A JPS5629337A (en) 1979-08-17 1979-08-17 Formation of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10463679A JPS5629337A (en) 1979-08-17 1979-08-17 Formation of silicon nitride film

Publications (1)

Publication Number Publication Date
JPS5629337A true JPS5629337A (en) 1981-03-24

Family

ID=14385926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10463679A Pending JPS5629337A (en) 1979-08-17 1979-08-17 Formation of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS5629337A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
JPH0758115A (en) * 1994-07-26 1995-03-03 Sony Corp Treatment of semiconductor substrate
JP2007128924A (en) * 2005-09-02 2007-05-24 Univ Of Miyazaki Method for nitriding film, film-forming substrate and nitriding equipment

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59231822A (en) * 1983-06-14 1984-12-26 Toshiba Corp Formation of nitride film
JPH0429222B2 (en) * 1983-06-14 1992-05-18
JPH0758115A (en) * 1994-07-26 1995-03-03 Sony Corp Treatment of semiconductor substrate
JP2007128924A (en) * 2005-09-02 2007-05-24 Univ Of Miyazaki Method for nitriding film, film-forming substrate and nitriding equipment

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