JPS5425670A - Gas etching method for iii-v group chemical compound semiconductor - Google Patents

Gas etching method for iii-v group chemical compound semiconductor

Info

Publication number
JPS5425670A
JPS5425670A JP9126377A JP9126377A JPS5425670A JP S5425670 A JPS5425670 A JP S5425670A JP 9126377 A JP9126377 A JP 9126377A JP 9126377 A JP9126377 A JP 9126377A JP S5425670 A JPS5425670 A JP S5425670A
Authority
JP
Japan
Prior art keywords
gas
iii
compound semiconductor
chemical compound
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9126377A
Other languages
Japanese (ja)
Inventor
Masaji Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9126377A priority Critical patent/JPS5425670A/en
Publication of JPS5425670A publication Critical patent/JPS5425670A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To make accurate the etching amount, by providing chambers performing gas etching in the gas growing unit and flowing H2 gas having the vapor pressure of H2 gas or V group element, and by locating the substrates in the H2 gas chamber first, and moving them to the etching chamber after the conditions in the etching chamber is stationary.
COPYRIGHT: (C)1979,JPO&Japio
JP9126377A 1977-07-28 1977-07-28 Gas etching method for iii-v group chemical compound semiconductor Pending JPS5425670A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9126377A JPS5425670A (en) 1977-07-28 1977-07-28 Gas etching method for iii-v group chemical compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9126377A JPS5425670A (en) 1977-07-28 1977-07-28 Gas etching method for iii-v group chemical compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5425670A true JPS5425670A (en) 1979-02-26

Family

ID=14021522

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9126377A Pending JPS5425670A (en) 1977-07-28 1977-07-28 Gas etching method for iii-v group chemical compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5425670A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881475A (en) * 1972-01-31 1973-10-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4881475A (en) * 1972-01-31 1973-10-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56169331A (en) * 1980-05-30 1981-12-26 Nec Corp Vapor phase etching method for compound semiconductor

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