JPS5425670A - Gas etching method for iii-v group chemical compound semiconductor - Google Patents
Gas etching method for iii-v group chemical compound semiconductorInfo
- Publication number
- JPS5425670A JPS5425670A JP9126377A JP9126377A JPS5425670A JP S5425670 A JPS5425670 A JP S5425670A JP 9126377 A JP9126377 A JP 9126377A JP 9126377 A JP9126377 A JP 9126377A JP S5425670 A JPS5425670 A JP S5425670A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- iii
- compound semiconductor
- chemical compound
- etching method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To make accurate the etching amount, by providing chambers performing gas etching in the gas growing unit and flowing H2 gas having the vapor pressure of H2 gas or V group element, and by locating the substrates in the H2 gas chamber first, and moving them to the etching chamber after the conditions in the etching chamber is stationary.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9126377A JPS5425670A (en) | 1977-07-28 | 1977-07-28 | Gas etching method for iii-v group chemical compound semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9126377A JPS5425670A (en) | 1977-07-28 | 1977-07-28 | Gas etching method for iii-v group chemical compound semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5425670A true JPS5425670A (en) | 1979-02-26 |
Family
ID=14021522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9126377A Pending JPS5425670A (en) | 1977-07-28 | 1977-07-28 | Gas etching method for iii-v group chemical compound semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5425670A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169331A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Vapor phase etching method for compound semiconductor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4881475A (en) * | 1972-01-31 | 1973-10-31 |
-
1977
- 1977-07-28 JP JP9126377A patent/JPS5425670A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4881475A (en) * | 1972-01-31 | 1973-10-31 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169331A (en) * | 1980-05-30 | 1981-12-26 | Nec Corp | Vapor phase etching method for compound semiconductor |
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