JPS56169331A - Vapor phase etching method for compound semiconductor - Google Patents

Vapor phase etching method for compound semiconductor

Info

Publication number
JPS56169331A
JPS56169331A JP7234680A JP7234680A JPS56169331A JP S56169331 A JPS56169331 A JP S56169331A JP 7234680 A JP7234680 A JP 7234680A JP 7234680 A JP7234680 A JP 7234680A JP S56169331 A JPS56169331 A JP S56169331A
Authority
JP
Japan
Prior art keywords
tube
compound semiconductor
source
valves
supplied
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7234680A
Other languages
Japanese (ja)
Inventor
Hisatsune Watanabe
Hiroshi Terao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7234680A priority Critical patent/JPS56169331A/en
Publication of JPS56169331A publication Critical patent/JPS56169331A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain a preferable overall surface of a compound semiconductor with a simple vapor phase growing device by periodically repeating the steps of supplying a gas to be supplied to the device to a compound semiconductor material and supplying to a substrate crystal. CONSTITUTION:A Ga source 3 and a bypass tube 4 are provided at the upstream side of a substrate 2 placed in a reaction tube 1, and carrier gas flows through the tube. After the carrier gas controlled in its flow rate by a flowmeter 7 is fed through valves 8 and 9 and is included with AsCl3 vapor in a constant-temperature tank 11, it is supplied to the source 3 or the tube 4 upon opening or closing of switching valves 13 and 14. At that time the valves 13, 14 are alternately opened and closed, and the repeating period is suitably accelerated. Thus, the vicinity of the substrate crystal 2 can be maintained equivalently to the state that the reaction gas from the source 3 and the AsCl3 from the tube 4 are substantially simultaneously supplied.
JP7234680A 1980-05-30 1980-05-30 Vapor phase etching method for compound semiconductor Pending JPS56169331A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7234680A JPS56169331A (en) 1980-05-30 1980-05-30 Vapor phase etching method for compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7234680A JPS56169331A (en) 1980-05-30 1980-05-30 Vapor phase etching method for compound semiconductor

Publications (1)

Publication Number Publication Date
JPS56169331A true JPS56169331A (en) 1981-12-26

Family

ID=13486646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7234680A Pending JPS56169331A (en) 1980-05-30 1980-05-30 Vapor phase etching method for compound semiconductor

Country Status (1)

Country Link
JP (1) JPS56169331A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407531A (en) * 1994-02-15 1995-04-18 At&T Corp. Method of fabricating a compound semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019367A (en) * 1972-03-22 1975-02-28
JPS5425670A (en) * 1977-07-28 1979-02-26 Nec Corp Gas etching method for iii-v group chemical compound semiconductor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5019367A (en) * 1972-03-22 1975-02-28
JPS5425670A (en) * 1977-07-28 1979-02-26 Nec Corp Gas etching method for iii-v group chemical compound semiconductor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5407531A (en) * 1994-02-15 1995-04-18 At&T Corp. Method of fabricating a compound semiconductor device
EP0667638A2 (en) * 1994-02-15 1995-08-16 AT&T Corp. Method of etching a compound semiconductor
EP0667638A3 (en) * 1994-02-15 1996-07-10 At & T Corp Method of etching a compound semiconductor.

Similar Documents

Publication Publication Date Title
US5589110A (en) Container for liquid metal organic compound
JPS5772318A (en) Vapor growth method
JPS56169331A (en) Vapor phase etching method for compound semiconductor
JPS5898138A (en) Vacuum cvd apparatus
JPS5790933A (en) Manufacture of amorphous semiconductor film
JPS5645899A (en) Vapor phase growing method for gallium nitride
JPH02304916A (en) Vapor growing device for iii-v compound semiconductor
JPS53148278A (en) Method and apparatus of vapor phase growth of compound semiconductor crystals
JP2585296B2 (en) Organometallic pyrolysis vapor phase epitaxy
JPS6411319A (en) Semiconductor vapor growth device
JPS5742118A (en) Plasma cvd device
JPS54147783A (en) Cvd device
JPS5737822A (en) Vapor phase growth method
JPS5267260A (en) Manufacture of iii-v group compounds semiconductor epitaxial laminatio n crystal
JPS5826656B2 (en) 3-5 Epitaxy method
JPS57196528A (en) Liquid-phase growing device
JPS5518077A (en) Device for growing film under gas
JPS5722112A (en) Preparation of noncrystalline sixc1-x
JPS6425520A (en) Vapor growth method for compound semiconductor
JPS5523085A (en) Production of silicon film
JPS5496545A (en) Color change in powder coating
JPS5727020A (en) Vapor phase crystal growth device
JPH0665209B2 (en) Semiconductor manufacturing equipment by vapor phase growth
JPS55138071A (en) Gas phase growing method and device therefor
JPS57128915A (en) Vapor-phase epitaxial growth device