JPS5742118A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS5742118A
JPS5742118A JP11892780A JP11892780A JPS5742118A JP S5742118 A JPS5742118 A JP S5742118A JP 11892780 A JP11892780 A JP 11892780A JP 11892780 A JP11892780 A JP 11892780A JP S5742118 A JPS5742118 A JP S5742118A
Authority
JP
Japan
Prior art keywords
reactor
film
wall
thin
quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11892780A
Other languages
Japanese (ja)
Inventor
Takeshi Yamano
Shinji Orisaka
Takashi Kondo
Yoshimare Suzuki
Mineto Tobinaga
Hiroji Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11892780A priority Critical patent/JPS5742118A/en
Publication of JPS5742118A publication Critical patent/JPS5742118A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Abstract

PURPOSE:To control a gaseous-phase growth region of a thin-film and the quality of the film by a plasma reaction in a reactor by adding a magnetic field from the outside the reactor. CONSTITUTION:The reactor is surrounded by placing a pair of magnets 9 outside the reactor 1, and a mixed gas of SiH4 and NH3 in the reactor changed into plasma by means of the magnetic circuit is parted from an inner wall of the reactor. Accordingly, Si3N4 is not formed on the inner wall, the generation of a defect due to the adhesion of the powder on substrates 4 is prevented, the washing of the inner wall is unnecessitated, the working ratio is improved, and the gowth of the thin- film in a gaseous phase and the quality of the film can be controlled.
JP11892780A 1980-08-27 1980-08-27 Plasma cvd device Pending JPS5742118A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11892780A JPS5742118A (en) 1980-08-27 1980-08-27 Plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11892780A JPS5742118A (en) 1980-08-27 1980-08-27 Plasma cvd device

Publications (1)

Publication Number Publication Date
JPS5742118A true JPS5742118A (en) 1982-03-09

Family

ID=14748638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11892780A Pending JPS5742118A (en) 1980-08-27 1980-08-27 Plasma cvd device

Country Status (1)

Country Link
JP (1) JPS5742118A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPS59167013A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS59167012A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS62263234A (en) * 1986-05-09 1987-11-16 Mitsubishi Heavy Ind Ltd Amorphous thin film forming system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5046074A (en) * 1973-08-28 1975-04-24

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode
JPH0468390B2 (en) * 1982-03-29 1992-11-02 Enaajii Konbaajon Debaisesu Inc
JPS59167013A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPS59167012A (en) * 1983-03-12 1984-09-20 Agency Of Ind Science & Technol Plasma cvd equipment
JPH0436453B2 (en) * 1983-03-12 1992-06-16 Kogyo Gijutsuin
JPH0436452B2 (en) * 1983-03-12 1992-06-16 Kogyo Gijutsuin
JPS62263234A (en) * 1986-05-09 1987-11-16 Mitsubishi Heavy Ind Ltd Amorphous thin film forming system

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