JPS6411319A - Semiconductor vapor growth device - Google Patents
Semiconductor vapor growth deviceInfo
- Publication number
- JPS6411319A JPS6411319A JP16728087A JP16728087A JPS6411319A JP S6411319 A JPS6411319 A JP S6411319A JP 16728087 A JP16728087 A JP 16728087A JP 16728087 A JP16728087 A JP 16728087A JP S6411319 A JPS6411319 A JP S6411319A
- Authority
- JP
- Japan
- Prior art keywords
- raw gas
- gas supply
- flow rate
- supply pipe
- valve
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To make a raw gas exchangeable steeply, by providing a raw gas supply tube with a pipeline switching valve and making an exhaust pipe branch to suck the raw gas inside the raw gas supply pipe and a reaction tube when the valve is opened. CONSTITUTION:When a valve 105 is closed, a raw gas is introduced into a reaction tube 104 via a raw gas supply pipe 106, a flow rate regulator 102, and a raw gas supply pipe 107. When the valve 105 is opened, the raw gas flows to an exhaust pipe 103 via a flow rate regulator 101. However, since the flow rate in the flow rate regulator 101 is larger than that of the flow rate regulator 102, one part of the gas in the reaction tube 104 also passes through the raw gas supply tube 107 and flows to the exhaust pipe 103. Accordingly hot only the raw gas flowing through the raw gas supply pipe 106 but also the raw gas remaining in the raw gas supply pipe 107 is exhausted through the exhaust pipe 103 to rapidly interrupt the supply of the raw gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16728087A JPS6411319A (en) | 1987-07-03 | 1987-07-03 | Semiconductor vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16728087A JPS6411319A (en) | 1987-07-03 | 1987-07-03 | Semiconductor vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6411319A true JPS6411319A (en) | 1989-01-13 |
Family
ID=15846819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16728087A Pending JPS6411319A (en) | 1987-07-03 | 1987-07-03 | Semiconductor vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6411319A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160065071A (en) * | 2016-05-30 | 2016-06-08 | 삼성디스플레이 주식회사 | Vapor deposition apparatus, vapor deposition method and method for manufacturing organic light emitting display apparatus |
| US9481929B2 (en) | 2013-09-10 | 2016-11-01 | Samsung Display Co., Ltd. | Vapor deposition apparatus, vapor deposition method and method of manufacturing organic light emitting display apparatus |
| CN108707875A (en) * | 2018-05-30 | 2018-10-26 | 厦门大学 | A kind of tubular type CVD stoves connector, two-dimensional material and its grower and method |
-
1987
- 1987-07-03 JP JP16728087A patent/JPS6411319A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9481929B2 (en) | 2013-09-10 | 2016-11-01 | Samsung Display Co., Ltd. | Vapor deposition apparatus, vapor deposition method and method of manufacturing organic light emitting display apparatus |
| KR20160065071A (en) * | 2016-05-30 | 2016-06-08 | 삼성디스플레이 주식회사 | Vapor deposition apparatus, vapor deposition method and method for manufacturing organic light emitting display apparatus |
| CN108707875A (en) * | 2018-05-30 | 2018-10-26 | 厦门大学 | A kind of tubular type CVD stoves connector, two-dimensional material and its grower and method |
| CN108707875B (en) * | 2018-05-30 | 2019-09-06 | 厦门大学 | A kind of tubular type CVD furnace connector, two-dimensional material and its grower and method |
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