JPS5737822A - Vapor phase growth method - Google Patents

Vapor phase growth method

Info

Publication number
JPS5737822A
JPS5737822A JP11387480A JP11387480A JPS5737822A JP S5737822 A JPS5737822 A JP S5737822A JP 11387480 A JP11387480 A JP 11387480A JP 11387480 A JP11387480 A JP 11387480A JP S5737822 A JPS5737822 A JP S5737822A
Authority
JP
Japan
Prior art keywords
growth
concentration
introducing
time
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11387480A
Other languages
Japanese (ja)
Inventor
Yukio Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11387480A priority Critical patent/JPS5737822A/en
Publication of JPS5737822A publication Critical patent/JPS5737822A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To improve controllability and reproducibility of vapor phase growth with low impurity concentration by a method wherein an impurity source is introduced intermittently in the device, and the rate betweem introducing time and nonintroducing time is changed to obtain a growth layer of the desired concentration. CONSTITUTION:The introducing path of reaction gas is branched off, one side thereof is connected to a growth system and the other side is to an exhausting system, and valves 1, 2 are provided respectively. Reaction gas controlled to obtain the prescribed concentration by a mass flow controller 4 is introduced intermittently in the reaction system by controlling the valves 1, 2 to open and close periodically with a timer 3. The introducing period T is set as shorter than the time being the impurity up to reach a growth substrate, and the introducing time pi in each period is made to be changed according to the desired impurity concentration. Accordingly the growth layer of low concentration close to impurity concentration of a nondoped growth film can be formed with favorable reproducibility.
JP11387480A 1980-08-19 1980-08-19 Vapor phase growth method Pending JPS5737822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11387480A JPS5737822A (en) 1980-08-19 1980-08-19 Vapor phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11387480A JPS5737822A (en) 1980-08-19 1980-08-19 Vapor phase growth method

Publications (1)

Publication Number Publication Date
JPS5737822A true JPS5737822A (en) 1982-03-02

Family

ID=14623273

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11387480A Pending JPS5737822A (en) 1980-08-19 1980-08-19 Vapor phase growth method

Country Status (1)

Country Link
JP (1) JPS5737822A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916089A (en) * 1987-09-04 1990-04-10 Stichting Katholieke Universiteit Process for the epitaxial production of semiconductor stock material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4916089A (en) * 1987-09-04 1990-04-10 Stichting Katholieke Universiteit Process for the epitaxial production of semiconductor stock material

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