JPS57173933A - Growing method for molecular beam - Google Patents

Growing method for molecular beam

Info

Publication number
JPS57173933A
JPS57173933A JP5793881A JP5793881A JPS57173933A JP S57173933 A JPS57173933 A JP S57173933A JP 5793881 A JP5793881 A JP 5793881A JP 5793881 A JP5793881 A JP 5793881A JP S57173933 A JPS57173933 A JP S57173933A
Authority
JP
Japan
Prior art keywords
molecular beam
substrate
gas
vacuum vessel
nozzle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5793881A
Other languages
Japanese (ja)
Inventor
Hajime Asahi
Mamoru Oishi
Haruo Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5793881A priority Critical patent/JPS57173933A/en
Publication of JPS57173933A publication Critical patent/JPS57173933A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain the required epitaxial growth layer of the large area without opening a vacuum vessel by a method wherein the material of metal molecular beam is prepared outside the vacuum vessel and a substrate is placed under the molecular beam spurting out nozzles. CONSTITUTION:A substrate is provided. (C2H5)3Ga gas kept at approximately 150 deg.C by being held in a heating oven 4 is supplied to a molecular beam spurting out nozzle 11 provided in a vacuum vessel 3 which is exhausted by a vacuum exhausting equipment 2 via piping 10 equipped by heaters. (C2H5)3Ga gas is thermally decomposed by the nozzle 11 and Ga molecular beam is obtained. On the other hand, AsH3 gas is supplied from a gas source 21 to a molecular beam spurting out nozzle 26 provided in the vacuum vessel 3 via piping 25 equipped by heaters. AsH3 gas is thermally decomposed by the nozzle 26 and As molecular beam is obtained. The Ga and As molecular beams are applied to the substrate 1 by opening a shutter 27 and epitaxial growth is made on the substrate 1. In this case, the temperature of the substrate 1, opening rate of adjustment valves 8 and 23, and so forth, are controlled by a controller 7 in accordance with the output from a mass analyser 28 in the vessel 3.
JP5793881A 1981-04-17 1981-04-17 Growing method for molecular beam Pending JPS57173933A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5793881A JPS57173933A (en) 1981-04-17 1981-04-17 Growing method for molecular beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5793881A JPS57173933A (en) 1981-04-17 1981-04-17 Growing method for molecular beam

Publications (1)

Publication Number Publication Date
JPS57173933A true JPS57173933A (en) 1982-10-26

Family

ID=13069961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5793881A Pending JPS57173933A (en) 1981-04-17 1981-04-17 Growing method for molecular beam

Country Status (1)

Country Link
JP (1) JPS57173933A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63272026A (en) * 1987-04-08 1988-11-09 ブリティシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニ Manufacture of evaporation source, molecular beam epitaxy apparatus and semiconductor device
WO1990001794A1 (en) * 1988-08-15 1990-02-22 Nippon Telegraph And Telephone Corporation Method of forming a semiconductor thin film and apparatus therefor
US5273932A (en) * 1988-08-15 1993-12-28 Nippon Telegraph & Telephone Corp. Method for forming semiconductor thin films where an argon laser is used to suppress crystal growth

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534778A (en) * 1976-07-02 1978-01-17 Matsushita Electric Ind Co Ltd Crystal growth method with molecular beam
JPS54114178A (en) * 1978-02-27 1979-09-06 Fujitsu Ltd Vacuum epitaxial growing method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS534778A (en) * 1976-07-02 1978-01-17 Matsushita Electric Ind Co Ltd Crystal growth method with molecular beam
JPS54114178A (en) * 1978-02-27 1979-09-06 Fujitsu Ltd Vacuum epitaxial growing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63272026A (en) * 1987-04-08 1988-11-09 ブリティシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニ Manufacture of evaporation source, molecular beam epitaxy apparatus and semiconductor device
WO1990001794A1 (en) * 1988-08-15 1990-02-22 Nippon Telegraph And Telephone Corporation Method of forming a semiconductor thin film and apparatus therefor
US5186750A (en) * 1988-08-15 1993-02-16 Nippon Telegraph And Telephone Corporation Method and apparatus for forming semiconductor thin films
US5273932A (en) * 1988-08-15 1993-12-28 Nippon Telegraph & Telephone Corp. Method for forming semiconductor thin films where an argon laser is used to suppress crystal growth

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