JPS5685830A - Heat treatment of compound semiconductor - Google Patents

Heat treatment of compound semiconductor

Info

Publication number
JPS5685830A
JPS5685830A JP16248079A JP16248079A JPS5685830A JP S5685830 A JPS5685830 A JP S5685830A JP 16248079 A JP16248079 A JP 16248079A JP 16248079 A JP16248079 A JP 16248079A JP S5685830 A JPS5685830 A JP S5685830A
Authority
JP
Japan
Prior art keywords
container
substrate
compound semiconductor
heat treatment
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16248079A
Other languages
Japanese (ja)
Inventor
Yukihiro Sasaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP16248079A priority Critical patent/JPS5685830A/en
Publication of JPS5685830A publication Critical patent/JPS5685830A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To heat treat effectively the compound semiconductor by a system which incorporates the simplicity of a tube opening method and the high atmospheric controllability and safety of a tube sealing method. CONSTITUTION:A GaAs substrate 15 is covered with a cover 13 by filling an As single unit 16 in a container 12 and aligning a low melting point metal 14 such as Ga or the like in a groove 12a. After gas in the container is substituted, the container is heated. The Ga metal 14 is molten at approx. 30 deg.C, and the body is thus bonded to the cover. When the body is subsequently heated to heat treatment temperature, As pressure is increased due to the As isolated from the unit 16, but the As is not isolated from the substrate 15, and the substrate 15 is heat treated. If the amount of volatile element 14 is selectively set, the partial pressure can be sufficiently raised higher than the decomposing pressur of the compound semiconductor 15, thereby sufficiently preventing the isolation thereof from the surface. When it is eventually removed out of a reaction tube and the cover 13 is removed, the substrate 15 can be simply exhausted, and the container can be used again for the heat treatment.
JP16248079A 1979-12-14 1979-12-14 Heat treatment of compound semiconductor Pending JPS5685830A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16248079A JPS5685830A (en) 1979-12-14 1979-12-14 Heat treatment of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16248079A JPS5685830A (en) 1979-12-14 1979-12-14 Heat treatment of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5685830A true JPS5685830A (en) 1981-07-13

Family

ID=15755411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16248079A Pending JPS5685830A (en) 1979-12-14 1979-12-14 Heat treatment of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5685830A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269399A (en) * 1988-09-02 1990-03-08 Nippon Mining Co Ltd Production of compound semiconductor
JPH02180783A (en) * 1988-12-28 1990-07-13 Nippon Mining Co Ltd Production of compound semiconductor single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0269399A (en) * 1988-09-02 1990-03-08 Nippon Mining Co Ltd Production of compound semiconductor
JPH02180783A (en) * 1988-12-28 1990-07-13 Nippon Mining Co Ltd Production of compound semiconductor single crystal

Similar Documents

Publication Publication Date Title
DE3573806D1 (en) Surface treatment process
ATE113757T1 (en) METHOD AND DEVICE FOR REMOVING LAYERS FROM SUBSTRATES.
SE8205950L (en) PROCEDURE, DEVICE AND CONTROL DEVICE FOR REPAIRING CARD METAL SCRAP BY ALLOY
JPS5753939A (en) Dry etching method for thin film
JPS5685830A (en) Heat treatment of compound semiconductor
GB975542A (en) Vapor deposition process
JPS56158420A (en) Vapor growth device
SE8602596D0 (en) SET FOR APPLICATION OF METAL COATINGS AND THE RECOVERY PRODUCT
JPS52792A (en) Process for fluidized regeneration of active carbon
JPS57201583A (en) Eliminating method of oxygen contained in water
JPS57160124A (en) Manufacture of thin film material
JPS5650520A (en) Processing method of semiconductor substrate
JPS5742122A (en) Manufacture of compound semiconductor device
JPS6454725A (en) Heat treating method for compound semiconductor substrate
JPS5513005A (en) Manufacturing of processed liquid egg
JPS52139373A (en) Treating method for compound semiconductor
JPS56112720A (en) Supperssion of thermal denaturation of compound semiconductor
JPS544571A (en) Plasma treating apparatus
JPS5742123A (en) Manufacture of compound semiconductor device
JPS57113290A (en) Manufacture of mis type schottky diode
JPS5643735A (en) Manufacture of semiconductor device
JPS56127758A (en) Method for restoring sacrifical anode effect of aluminum alloy member
JPS5394868A (en) Heat treatment method
JPS5368412A (en) Vaccume exhausting method
JPS5726443A (en) Method of stabilizing surface of silicon device