JPS5575997A - Liquid phase crystal growing method - Google Patents
Liquid phase crystal growing methodInfo
- Publication number
- JPS5575997A JPS5575997A JP14766378A JP14766378A JPS5575997A JP S5575997 A JPS5575997 A JP S5575997A JP 14766378 A JP14766378 A JP 14766378A JP 14766378 A JP14766378 A JP 14766378A JP S5575997 A JPS5575997 A JP S5575997A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- substrates
- container
- temp
- crystal growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To improve the work efficiency of liquid phase crystal growth and considerably enhance the productivity by setting crystal growing substrates and a soln. at predetermined portions in a cylindrical container with no temp. difference in the longitudinal direction and shifting the soln. to a substrate container after heating.
CONSTITUTION: Cooling pipe 3 is placed in quartz cylindrical container 1 provided with external heater 2, thereby giving a temp. gradient in the diametrical direction and making the temp. in the longitudinal direction uniform. Raw material soln. 11 such as Ga soln. is housed in container 4, and substrates 7 are perpendicularly set at the inside of the diametrical direction (low temp. side) of crystal growing container 5. By opening valve 8 soln. 11 is shifted to container 5 and contacted to substrates 7 to start crystal growth. After finishing the growth, by opening valve 9 soln. 11 is shifted to soln. reservoir 6 and rapidly cooled to room temp. Thus, the soln. can be recovered, and because of the cylindrical container, many substrates 7 can be set to jig 10, resulting in enhanced productivity. Since there is no residual soln. on substrates 7, substrates 7 are easily handled.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14766378A JPS5575997A (en) | 1978-11-29 | 1978-11-29 | Liquid phase crystal growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14766378A JPS5575997A (en) | 1978-11-29 | 1978-11-29 | Liquid phase crystal growing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5575997A true JPS5575997A (en) | 1980-06-07 |
| JPS611394B2 JPS611394B2 (en) | 1986-01-16 |
Family
ID=15435445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14766378A Granted JPS5575997A (en) | 1978-11-29 | 1978-11-29 | Liquid phase crystal growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5575997A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9722334B2 (en) | 2010-04-07 | 2017-08-01 | Black & Decker Inc. | Power tool with light unit |
| US10423666B2 (en) | 2015-05-18 | 2019-09-24 | Nagase & Co., Ltd. | Writing method and semiconductor device including a search memory mat with write processing terminated when one piece of divided key data is successfully written |
-
1978
- 1978-11-29 JP JP14766378A patent/JPS5575997A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9722334B2 (en) | 2010-04-07 | 2017-08-01 | Black & Decker Inc. | Power tool with light unit |
| US10423666B2 (en) | 2015-05-18 | 2019-09-24 | Nagase & Co., Ltd. | Writing method and semiconductor device including a search memory mat with write processing terminated when one piece of divided key data is successfully written |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS611394B2 (en) | 1986-01-16 |
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