JPS5742600A - Preparation of silicon carbide single crystal - Google Patents
Preparation of silicon carbide single crystalInfo
- Publication number
- JPS5742600A JPS5742600A JP11875780A JP11875780A JPS5742600A JP S5742600 A JPS5742600 A JP S5742600A JP 11875780 A JP11875780 A JP 11875780A JP 11875780 A JP11875780 A JP 11875780A JP S5742600 A JPS5742600 A JP S5742600A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- single crystal
- sic single
- solution containing
- stand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prepare an SiC single crystal of a sufficient size and high quality very simply, by mixing a solution containing carbon and iron with a solution containing silicon, and allowing the mixed solution to stand.
CONSTITUTION: A solution containing C and Fe, e.g. a solution prepared by dissolving an iron material containing a carbonaceous component in nitric acid of a suitable concentration, is mixed with a solution containing Si, e.g. an aqueous solution of Na2SiO3, and the resultant mixed solution is then allowed to stand. Thus, a massive SiC single crystal is formed in a gelatinous material, containing SiO2, and formed in the solution. The method can be carried out simply at about ordinary temperature, and the SiC single crystal of size sufficient for a semiconductor element can be obtained by controlling the pH of the solution, contents of trivalent carbon and trivalent Fe, etc. As described above, this method is a method for preparing the SiC single crystal by utilizing the concentrating phenomenon at ordinary temperature.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11875780A JPS5815479B2 (en) | 1980-08-28 | 1980-08-28 | Method for manufacturing silicon carbide single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11875780A JPS5815479B2 (en) | 1980-08-28 | 1980-08-28 | Method for manufacturing silicon carbide single crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5742600A true JPS5742600A (en) | 1982-03-10 |
JPS5815479B2 JPS5815479B2 (en) | 1983-03-25 |
Family
ID=14744298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11875780A Expired JPS5815479B2 (en) | 1980-08-28 | 1980-08-28 | Method for manufacturing silicon carbide single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5815479B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997005303A1 (en) * | 1995-07-27 | 1997-02-13 | Siemens Aktiengesellschaft | Process for producing silicon carbide monocrystals |
-
1980
- 1980-08-28 JP JP11875780A patent/JPS5815479B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997005303A1 (en) * | 1995-07-27 | 1997-02-13 | Siemens Aktiengesellschaft | Process for producing silicon carbide monocrystals |
Also Published As
Publication number | Publication date |
---|---|
JPS5815479B2 (en) | 1983-03-25 |
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