JPS5742600A - Preparation of silicon carbide single crystal - Google Patents

Preparation of silicon carbide single crystal

Info

Publication number
JPS5742600A
JPS5742600A JP11875780A JP11875780A JPS5742600A JP S5742600 A JPS5742600 A JP S5742600A JP 11875780 A JP11875780 A JP 11875780A JP 11875780 A JP11875780 A JP 11875780A JP S5742600 A JPS5742600 A JP S5742600A
Authority
JP
Japan
Prior art keywords
solution
single crystal
sic single
solution containing
stand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11875780A
Other languages
Japanese (ja)
Other versions
JPS5815479B2 (en
Inventor
Takashi Fujii
Tsuguo Fukuda
Yoshihiro Kokubu
Hitoshi Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11875780A priority Critical patent/JPS5815479B2/en
Publication of JPS5742600A publication Critical patent/JPS5742600A/en
Publication of JPS5815479B2 publication Critical patent/JPS5815479B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prepare an SiC single crystal of a sufficient size and high quality very simply, by mixing a solution containing carbon and iron with a solution containing silicon, and allowing the mixed solution to stand.
CONSTITUTION: A solution containing C and Fe, e.g. a solution prepared by dissolving an iron material containing a carbonaceous component in nitric acid of a suitable concentration, is mixed with a solution containing Si, e.g. an aqueous solution of Na2SiO3, and the resultant mixed solution is then allowed to stand. Thus, a massive SiC single crystal is formed in a gelatinous material, containing SiO2, and formed in the solution. The method can be carried out simply at about ordinary temperature, and the SiC single crystal of size sufficient for a semiconductor element can be obtained by controlling the pH of the solution, contents of trivalent carbon and trivalent Fe, etc. As described above, this method is a method for preparing the SiC single crystal by utilizing the concentrating phenomenon at ordinary temperature.
COPYRIGHT: (C)1982,JPO&Japio
JP11875780A 1980-08-28 1980-08-28 Method for manufacturing silicon carbide single crystal Expired JPS5815479B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11875780A JPS5815479B2 (en) 1980-08-28 1980-08-28 Method for manufacturing silicon carbide single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11875780A JPS5815479B2 (en) 1980-08-28 1980-08-28 Method for manufacturing silicon carbide single crystal

Publications (2)

Publication Number Publication Date
JPS5742600A true JPS5742600A (en) 1982-03-10
JPS5815479B2 JPS5815479B2 (en) 1983-03-25

Family

ID=14744298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11875780A Expired JPS5815479B2 (en) 1980-08-28 1980-08-28 Method for manufacturing silicon carbide single crystal

Country Status (1)

Country Link
JP (1) JPS5815479B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997005303A1 (en) * 1995-07-27 1997-02-13 Siemens Aktiengesellschaft Process for producing silicon carbide monocrystals

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997005303A1 (en) * 1995-07-27 1997-02-13 Siemens Aktiengesellschaft Process for producing silicon carbide monocrystals

Also Published As

Publication number Publication date
JPS5815479B2 (en) 1983-03-25

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