JPH0288430A - Magneto-optical garnet - Google Patents
Magneto-optical garnetInfo
- Publication number
- JPH0288430A JPH0288430A JP23894288A JP23894288A JPH0288430A JP H0288430 A JPH0288430 A JP H0288430A JP 23894288 A JP23894288 A JP 23894288A JP 23894288 A JP23894288 A JP 23894288A JP H0288430 A JPH0288430 A JP H0288430A
- Authority
- JP
- Japan
- Prior art keywords
- garnet
- sensitivity constant
- magnetic field
- constant
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 30
- 239000013078 crystal Substances 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 229910052742 iron Inorganic materials 0.000 abstract description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- -1 zirconium-substituted gadolinium Chemical class 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910000464 lead oxide Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 3
- 229940075613 gadolinium oxide Drugs 0.000 description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、磁気光学ガーネットに関し、詳しくは、磁界
センサ用磁気光学ガーネットに関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magneto-optic garnet, and more particularly to a magneto-optic garnet for use in magnetic field sensors.
［従来の技術］
従来、第５図で示すように磁性ガーネットには、その飽
和磁化よりも小さな外部磁界中ではファラデー回転能が
外部磁界に比例するという性質がある。この性質を利用
して磁性ガーネ・ントの磁界センサへの応用が提案され
ている。このセンサの分解能を高めるために、磁性ガー
ネットにＢｉをドープし単位磁界当たりのファラデー回
転能（飽和磁界中でのファラデー回転θＦと飽和磁界Ｍ
Ｓとの比θｐ ／ Ｍ ｓ。以下これを感度定数Ｃと記
す）を大きくした（ＹＬａＢ １）Ｆｅ＝ ０．２が提
案されている（Ｊ、Ｍａｇｎ、Ｓｏｃ、Ｊ ｐｎ。[Prior Art] Conventionally, as shown in FIG. 5, magnetic garnet has a property that its Faraday rotation ability is proportional to the external magnetic field in an external magnetic field smaller than its saturation magnetization. Utilizing this property, the application of magnetic magnets to magnetic field sensors has been proposed. In order to increase the resolution of this sensor, magnetic garnet is doped with Bi, and the Faraday rotation per unit magnetic field (Faraday rotation θF in a saturated magnetic field and the saturated magnetic field M
The ratio with S θp/M s. (YLaB 1)Fe=0.2 has been proposed (J, Magn, Soc, J pn) with a larger sensitivity constant (hereinafter referred to as C).
ＶＯＩ、１１．Ｓｕｐｐｌｅｍｅｎｔ、Ｎｏ。VOI, 11. Supplement, No.
Ｓ ｌ （１９８７）４０１−４０４）。(1987) 401-404).
［発明が解決しようとする課題］
磁性ガーネットを使用する磁界センサの実用化には実用
温度範囲（例えば２５０〜３５０Ｋ）で感度定数Ｃが可
能な限り変化しないことが望まれるが上記（ＹＬ ａ
Ｂ ｉ ） Ｆ ｅｓ ０１２では波長０．８μｍの３
００Ｋにおける感度定数ＣＬ３ｏｏｘ＞、を基準にする
と２５０Ｋにおける感度定数０３□５０に１３５０ Ｋ
における感度定数Ｃｔ３５０Ｋ）は第６図に示すように
、それぞれ−２（％）、＋２（％）変動する。[Problems to be Solved by the Invention] In order to put a magnetic field sensor using magnetic garnet into practical use, it is desirable that the sensitivity constant C does not change as much as possible in the practical temperature range (for example, 250 to 350 K).
B i ) Fes 012 has a wavelength of 0.8 μm 3
Based on the sensitivity constant CL3oox> at 00K, the sensitivity constant at 250K is 03□50, which is 1350 K.
As shown in FIG. 6, the sensitivity constant Ct350K) varies by -2 (%) and +2 (%), respectively.
そこで、本発明の技術的課題はＢｉをドープした感度定
数Ｃの大きな磁性ガーネットにおいて２５０〜３５０に
の温度範囲で、その感度定数Ｃの変動が極めて小さい磁
界センサ用材料を提供することにある。Therefore, the technical problem of the present invention is to provide a material for a magnetic field sensor in which the fluctuation of the sensitivity constant C is extremely small in the temperature range of 250 to 350 °C in a magnetic garnet doped with Bi and having a large sensitivity constant C.
［課題を解決するための手段］
本発明によれば、（Ｙｌ ｘ −ｖ Ｇｄｘ Ｂ Ｌ
ｙ ）Ｆ ｅ ｓ ０１２ （０．０５≦Ｘ≦０．６，
０．５≦Ｙ≦２６０）の化学式で現わされることを特徴
とする磁界センサ用磁気光学ガーネットが得られる。[Means for solving the problem] According to the present invention, (Yl x −v Gdx B L
y ) F e s 012 (0.05≦X≦0.6,
A magneto-optical garnet for magnetic field sensors is obtained, which is represented by the chemical formula (0.5≦Y≦260).
［実施例］ 以下に実施例を用いて説明する。[Example] This will be explained below using examples.
（実施例１）
酸化イツトリウム、酸化ガドリニウム、酸化ビスマス、
酸化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液
よりカルシウム、マグネシウム、ジルコニウム置換ガド
リニウム、ガリウム、ガーネット単結晶基板に（Ｙｏ、
＊ｑＧ ｄ ｏ、ｏｑＢ ｉ ２．０ ）Ｆｅ、Ｏ，□
なる組成を有する磁性ガーネット単結晶膜をＬＰＥ （
リキッド、フェイズ、エピタキシャル）法より育成した
。この磁性ガーネット膜の波長０．８μｍにおける感度
定数Ｃを２５０〜３５０にの温度範囲で測定したところ
第１図のような結果を得た。３００Ｋにおける感度定数
Ｃｌ３００に＋を基準にすると２５０〜３５０にの温度
範囲全域で感度定数Ｃの値は±１（％）以内の変化を示
したに過ぎなかった。この変化率は（ＹＬ ａ Ｂ ｉ
） Ｆ ｅｓ Ｏ＋ｚにおける変化率よりも小さく、温
度特性の良好な磁界センサ用材料として優れている。ま
たこの（Ｙ ｏ、 ｅｓＧ ｄ ｏ、 ａｓＢ ｉ ２
．０ ） Ｆ ｅｓ ０１２は波長のみならず他の波長
における感度定数の温度変化も極めて小さかった。(Example 1) Yttrium oxide, gadolinium oxide, bismuth oxide,
Iron oxide, lead oxide, and boron oxide are mixed and heated to form a melt on a single-crystal substrate of calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet (Yo,
*qG d o, oqB i 2.0) Fe, O, □
A magnetic garnet single crystal film with a composition of
Grown using liquid, phase, epitaxial) methods. When the sensitivity constant C of this magnetic garnet film at a wavelength of 0.8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 1 were obtained. Based on the sensitivity constant Cl300 at 300K, the value of the sensitivity constant C only showed a change within ±1 (%) over the entire temperature range from 250 to 350K. This rate of change is (YL a B i
) The rate of change is smaller than the rate of change in F es O+z, making it an excellent material for magnetic field sensors with good temperature characteristics. Also, this (Y o, esG do, asB i 2
．． 0) Fes 012 showed extremely small temperature changes in sensitivity constants not only in wavelength but also in other wavelengths.
（実施例２）
酸化イツトリウム、酸化ガドリニウム、酸化ビスマス、
酸化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液
よりカルシウム、マグネシウム、ジルコニウム置換ガド
リニウム、ガリウム、ガーネット単結晶基板に（Ｙｌ、
ｏＧｄｏ、２Ｂｔ１．５）ＦｅｑＯ＋２なる組成を有す
る磁性ガーネットｔｌｉ結品膜をＬＰＥ （リキッド、
フェイズ、エピタキシャル）法により育成した。この磁
性ガーネット膜の波長０．８μｍにおける感度定数Ｃを
２５０〜３５０にの温度範囲で測定したところ第２図の
ような結果を得た。３００Ｋにおける感度定数Ｃｔｊｏ
ｏｘ＋を基準にすると２５０〜３５０にの温度範囲全域
で感度定数Ｃの値は±０．１ （％）以内の変化を示し
たに過ぎなかった。この変化率は（ＹＬａＢｉ）Ｆｅｓ
Ｏ，２における変化率よりも小さく、温度特性の良好
な磁界センサ用材料として優れている。またこの（”
＋、 ｏ Ｇ ｄ ｏ、２Ｂｊ＋、５）Ｆｅｓ ０１２
は波長０．８μｍの波長のみならず他の波長における感
度定数の温度変化も極めて小さかった。(Example 2) Yttrium oxide, gadolinium oxide, bismuth oxide,
Iron oxide, lead oxide, and boron oxide were mixed and heated to melt the melt, which was then deposited on calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrates (Yl,
oGdo, 2Bt1.5) A magnetic garnet tli condensation film having a composition of FeqO+2 was subjected to LPE (Liquid,
It was grown by phase, epitaxial) method. When the sensitivity constant C of this magnetic garnet film at a wavelength of 0.8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 2 were obtained. Sensitivity constant Ctjo at 300K
Based on ox+, the value of the sensitivity constant C showed only a change within ±0.1 (%) over the entire temperature range from 250 to 350. This rate of change is (YLaBi)Fes
The rate of change is smaller than that at O.2, making it an excellent material for magnetic field sensors with good temperature characteristics. Also this(”
+, o G do, 2Bj+, 5) Fes 012
The temperature change in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths was extremely small.
（実施例３）
酸化イツトリウム、酸化がトリニウム、酸化ビスマス、
酸化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液
よりカルシウム、マグネシウム、ジルコニウム置換ガド
リニウム、ガリウム、ガーネット１１結晶基板に（Ｙｌ
、２ Ｇ ｄｏ、Ｂ ｌ ＋、ｓ ）Ｆｅ、０．２なる
組成を白°する磁性ガーネット単結晶膜をＬＰＥ （リ
キッド、フェイズ、エピタキシャル）法により育成した
。この磁性ガーネット膜の波長０．８μｍにおける感度
定数Ｃを２５０〜３５０にの温度範囲で測定したところ
第３図のような結果を得た。３００Ｋにおける感度定数
Ｃ０．、。に）を基準にすると２５０〜３５０にの温度
範囲全域で感度定数Ｃの値は±０．５（％）以内の変化
を示したに過ぎなかった。この変化率は（ＹＬａＢｉ）
Ｆｅ、０１２における変化率よりも小さく、温度特性の
良好な磁界センサ用材料として優れている。またこの（
Ｙｌ、２ Ｇ ｄｏ、ｉＢｉ＋、５）Ｆｅ５０１２は波
長０．８μｍの波長のみならず他の波長における感度定
数の温度変化も極めて小さかった。(Example 3) Yttrium oxide, trinium oxide, bismuth oxide,
Iron oxide, lead oxide, and boron oxide were mixed, heated, and melted to form a melt on calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet 11 crystal substrates (Yl
, 2 G do, B l +, s ) Fe, a magnetic garnet single crystal film having a composition of 0.2 was grown by an LPE (liquid, phase, epitaxial) method. When the sensitivity constant C of this magnetic garnet film at a wavelength of 0.8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 3 were obtained. Sensitivity constant C0. at 300K. ,. ), the value of the sensitivity constant C showed only a change within ±0.5 (%) over the entire temperature range from 250 to 350°C. This rate of change is (YLaBi)
The rate of change is smaller than that of Fe, 012, making it an excellent material for magnetic field sensors with good temperature characteristics. Also this (
Yl, 2 G do, iBi+, 5) For Fe5012, the temperature change in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths was extremely small.
（実施例４）
酸化イツトリウム、酸化ガドリニウム、酸化ビスマス、
酸化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液
よりカルシウム、マグネシウム、ジルコニウム置換ガド
リニウム、ガリウム、ガーネット単結晶基板に（Ｙ １
．９ Ｇ ｄ ｏ、ｂ Ｂ ｉ Ｏ，９）Ｆｅ、０．□
なる組成を有する磁性ガーネット単結晶膜をＬＰＥ （
リキッド、フェイズ、エピタキシャル）法により育成し
た。この磁性ガーネット膜の波長０．８μｍにおける感
度定数Ｃを２５０〜３５０にの温度範囲で＃１定したと
ころ第４図のような結果を得た。３００Ｋにおける感度
定数０．３゜。。を基準にすると２５０〜３５０にの温
度範囲全域で感度定数Ｃの値は±１．０（％）以内の変
化を示したに過ぎなかった。この変化率は（ＹＬａＢ
１）Ｆｅｓ ０．２における変化率よりも小さく、温度
特性の良好な磁界センサ用材料として優れている。また
この（Ｙｌ、９ Ｇ ｄｏ、６Ｂ ｉｏ、ｓ ） Ｆ
ｅ、０１２は波長０．８μｍの波長のみならず他の波長
における感度定数の温度変化も極めて小さかった。(Example 4) Yttrium oxide, gadolinium oxide, bismuth oxide,
Iron oxide, lead oxide, and boron oxide were mixed and melted by heating to form a melt on calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrates (Y 1
．． 9 G d o, b B i O, 9) Fe, 0. □
A magnetic garnet single crystal film with a composition of
Grown using liquid, phase, epitaxial) methods. When the sensitivity constant C of this magnetic garnet film at a wavelength of 0.8 .mu.m was set to #1 in a temperature range of 250 to 350, the results shown in FIG. 4 were obtained. Sensitivity constant at 300K: 0.3°. . Based on this, the value of the sensitivity constant C only showed a change within ±1.0 (%) over the entire temperature range from 250 to 350 degrees Celsius. This rate of change is (YLaB
1) The rate of change is smaller than that at Fes 0.2, making it an excellent material for magnetic field sensors with good temperature characteristics. Also, this (Yl, 9 G do, 6B io, s) F
e, 012 had extremely small temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths.
［発明の効果］
以上説明したごとく本発明を用いれば感度定数Ｃが大き
く、なおかつその温度変動が極めて小さいという優れた
特性を有する磁界センサ用磁気光学ガーネットを得るこ
とが可能となり工業的利用価値は大である。[Effects of the Invention] As explained above, by using the present invention, it is possible to obtain magneto-optical garnet for magnetic field sensors that has excellent characteristics such as a large sensitivity constant C and extremely small temperature fluctuation, and has a high industrial utility value. It's large.
第１図は実施例１に係る（ Ｙ Ｏ，９９Ｇ ｄ ｏ、
ｏ５Ｂｊ２．ｏ）Ｆｅｓ ０１２単結晶の波長０．８
μｍでの感度定数Ｃの温度変動を示す図、
第２図は実施例２に係る（Ｙ、、、Ｇｄ、、２Ｂｉ＋、
、）Ｆｅｓ ０＋２単結晶の波長０．８μｍでの感度定
数Ｃの温度変動を示す図、
第３図は実施例３に係る（ Ｙ ｌ、 ２ Ｇ ｄ ０
．３Ｂｉ、、５）ＦｅｓＯ＋□単結晶の波長０．８ａｍ
での感度定数Ｃの温度変動を示す図、
第４図は実施例４に係る（Ｙｌ、＊Ｇｄｏ、６Ｂｉｏ、
、）Ｆｅ、０１２単結晶の波長０．８μｍでの感度定数
Ｃの温度変動を示す図、
第５図は磁界中の磁性ガーネットのファラデー回転を示
す図、
第６図は（ＹＬａＢｉ）Ｆｅｑ ０１２単結晶の波長０
．８μｍでの感度定数Ｃの温度変動を示す図である。
Ｔ（Ｋ）
Ｔ（Ｋ）
第５図
外部磁界強度（Ｏｅ）
丁（Ｋ）
Ｔ （Ｋ）FIG. 1 relates to Example 1 (YO, 99G do,
o5Bj2. o) Wavelength of Fes 012 single crystal 0.8
Figure 2 shows the temperature variation of the sensitivity constant C in μm.
, ) A diagram showing the temperature fluctuation of the sensitivity constant C of Fes 0+2 single crystal at a wavelength of 0.8 μm.
．． 3Bi, 5) FesO+□ Single crystal wavelength 0.8am
Figure 4 shows the temperature fluctuation of the sensitivity constant C in Example 4 (Yl, *Gdo, 6Bio,
Figure 5 shows the Faraday rotation of magnetic garnet in a magnetic field. Figure 6 shows the (YLaBi) Feq 012 single crystal. crystal wavelength 0
．． It is a figure which shows the temperature fluctuation of the sensitivity constant C at 8 micrometers. T (K) T (K) Figure 5 External magnetic field strength (Oe) T (K)
Claims (1)
Ｏ＿１＿２（０．０５≦Ｘ≦０．６、０．５≦Ｙ≦２．
０）の化学式で表されることを特徴とする磁界センサ用
磁気光学ガーネット。1, (Y_3-_X-_YGd_XBi_Y)Fe_5
O_1_2 (0.05≦X≦0.6, 0.5≦Y≦2.
A magneto-optical garnet for magnetic field sensors, characterized in that it is represented by the chemical formula: 0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23894288A JPH0288430A (en) | 1988-09-26 | 1988-09-26 | Magneto-optical garnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23894288A JPH0288430A (en) | 1988-09-26 | 1988-09-26 | Magneto-optical garnet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0288430A true JPH0288430A (en) | 1990-03-28 |
Family
ID=17037570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23894288A Pending JPH0288430A (en) | 1988-09-26 | 1988-09-26 | Magneto-optical garnet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0288430A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04324817A (en) * | 1991-04-25 | 1992-11-13 | Matsushita Electric Ind Co Ltd | Magneto-optical element and magnetic field measuring device |
| US5603762A (en) * | 1994-05-31 | 1997-02-18 | Ngk Insulators, Ltd. | Process and apparatus for the production of films of oxide type single crystal |
-
1988
- 1988-09-26 JP JP23894288A patent/JPH0288430A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04324817A (en) * | 1991-04-25 | 1992-11-13 | Matsushita Electric Ind Co Ltd | Magneto-optical element and magnetic field measuring device |
| US5603762A (en) * | 1994-05-31 | 1997-02-18 | Ngk Insulators, Ltd. | Process and apparatus for the production of films of oxide type single crystal |
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