JPH02196100A - Magneto-optical garnet - Google Patents
Magneto-optical garnetInfo
- Publication number
- JPH02196100A JPH02196100A JP1514789A JP1514789A JPH02196100A JP H02196100 A JPH02196100 A JP H02196100A JP 1514789 A JP1514789 A JP 1514789A JP 1514789 A JP1514789 A JP 1514789A JP H02196100 A JPH02196100 A JP H02196100A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- sensitivity constant
- garnet
- magneto
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 31
- 235000009074 Phytolacca americana Nutrition 0.000 abstract 1
- 240000007643 Phytolacca americana Species 0.000 abstract 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 4
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 4
- 229910000464 lead oxide Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- -1 zirconium-substituted gadolinium Chemical class 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical group [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052726 zirconium Chemical group 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、磁界センサに用いられる磁気光学ガーネット
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magneto-optic garnet used in a magnetic field sensor.
［従来の技術］
磁性ガーネットには、第５図に示すように、その飽和磁
化よりも小さな外部磁界中では、ファラデー回転能が外
部磁界に比例するという性質がある。この性質を利用し
て、磁性ガーネットの磁界センサへの応用が提案されて
いる。[Prior Art] As shown in FIG. 5, magnetic garnet has the property that in an external magnetic field smaller than its saturation magnetization, its Faraday rotation ability is proportional to the external magnetic field. Utilizing this property, the application of magnetic garnet to magnetic field sensors has been proposed.
このセンサの分解能を高めるために、磁性ガーネットに
Ｂｉをドープし単位磁界当たりのファラデー回転能（飽
和磁界中でのファラデー回転θ。In order to increase the resolution of this sensor, magnetic garnet is doped with Bi to obtain Faraday rotation per unit magnetic field (Faraday rotation θ in a saturated magnetic field).
と飽和磁界Ｍ との比θ ／Ｍ 、以下これを感Ｓ
Ｆ Ｓ
度定数Ｃと記す）を大きくした（Ｙ、Ｌａ、Ｂｉ）３Ｆ
ｅ５０１２が提案されている（Ｊ、 Ｍａｇｎ、 Ｓｏ
ｃ、 Ｊｐｎ、、 Ｖｏｌ、１１． ５ｕｐｐｌｃｖ
ｅｎｔ、 ＮＯ，５Ｉ（１９８７）４０１−４０４）
。and the saturation magnetic field M θ /M, hereinafter referred to as S
F S degree constant C) is increased (Y, La, Bi) 3F
e5012 has been proposed (J, Magn, So
c, Jpn,, Vol, 11. 5upplcv
ent, NO, 5I (1987) 401-404)
.
［発明が解決しようとする課題］
磁性ガーネットを使用する磁界センサの実用化には、実
用温度範囲（例えば、２５０〜３５０Ｋ）で感度定数Ｃ
が可能な限り変化しないことが望ま終るが、上記（Ｙ、
Ｌａ、Ｂｔ） Ｆｅ５Ｏ１２では、波長０．８μｍの
３００Ｋにおける感度定数Ｃ＋５ｏｏｘ）を基準にする
と２５０Ｋにおける感度定数Ｃ（２，。Ｋ）、３５０Ｋ
における感度定数Ｃ（３，。。[Problem to be solved by the invention] In order to put a magnetic field sensor using magnetic garnet into practical use, it is necessary to maintain a sensitivity constant C in a practical temperature range (for example, 250 to 350 K).
Although it is desired that the above changes as little as possible, (Y,
La, Bt) For Fe5O12, based on the sensitivity constant C+5oox) at 300K at a wavelength of 0.8 μm, the sensitivity constant C(2,.K) at 350K
The sensitivity constant C(3,.
は、第６図に示すように、夫々−２（％）、＋２（％）
変動する。are -2 (%) and +2 (%), respectively, as shown in Figure 6.
fluctuate.
そこで、本発明の技術的課題は、Ｂｉをドープした感度
定数Ｃの大きな磁性ガーネットにおいて、２５０〜３５
０にの温度範囲で、その感度定数Ｃの変動が極めて小さ
い磁界センサ用材料を提供することにある。Therefore, the technical problem of the present invention is to obtain a Bi-doped magnetic garnet with a large sensitivity constant C of 250 to 35
It is an object of the present invention to provide a material for a magnetic field sensor whose sensitivity constant C has extremely small fluctuations in a temperature range of 0.
［課題を解決するための手段］ 本発明によれば、（Ｙ３−ｘイ 、 。[Means to solve the problem] According to the present invention, (Y3-xi,).
Ｈｏ Ｂｉ ）
Ｆｅ５０１□（但し、０．１≦ Ｘ ≦１．６゜０．５
≦Ｙ ≦２．０）の化学式で表されることを特徴とする
磁界センサ用磁気光学ガーネットが得られる。Ho Bi ) Fe501□ (However, 0.1≦X≦1.6゜0.5
A magneto-optical garnet for magnetic field sensors is obtained, which is represented by the chemical formula: ≦Y≦2.0).
［実施例コ 以下、本発明の実施例について説゛明する。[Example code] Examples of the present invention will be described below.
（実施例１）
酸化イツトリウム、酸化ホルミウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に（Ｙ
Ｈｏ Ｂｉ ）１．５ ０．１ １．４
Ｆ ｅ ５０□２なる組成を有する磁性ガーネット単結
晶膜をＬＰＥ （リキッド・フェイズ・エピタキシャル
）法により育成した。この磁性ガーネット膜の波長０，
８μｍにおける感度定数Ｃを２５０〜３５０にの温度範
囲で測定したところ第１図のような結果を得た。３００
Ｋにおける感度定数 Ｃ３，。１）Ｋｌを基準にすると
２５０〜３５０にの温度範囲全域で、感度定数Ｃの値は
、±１（％）以内の変化を示したにすぎなかった。この
変化率は、（Ｙ、Ｌａ、Ｂｉ） Ｆｅｓ Ｏ□２に於
ける変化率よりも小さく、温度特性の良好な磁界センサ
用材料として優れている。(Example 1) Yttrium oxide, holmium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed, heated, and melted to form a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrate (Y
A magnetic garnet single crystal film having a composition of Ho Bi ) 1.5 0.1 1.4 Fe 50□2 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0,
When the sensitivity constant C at 8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 1 were obtained. 300
Sensitivity constant at K C3,. 1) The value of the sensitivity constant C showed only a change within ±1 (%) over the entire temperature range from 250 to 350 with Kl as the standard. This rate of change is smaller than the rate of change in (Y, La, Bi) Fes O□2, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｈｏ Ｂｉ ）Ｆｅ５１
．５ ０．１ １．４
０１２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y Ho Bi )Fe51
．． 5 0.1 1.4 012 had extremely small temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths.
（実施例２）
酸化イツトリウム、酸化ホルミウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に （Ｙ
Ｈｏ Ｂｉ ）０．８ ０．８ １．４
Ｆ ｅ ５０１２なる組成を有する磁性ガーネット単結
晶膜をＬＰＥ （リキッド・フェイズ・エピタキシャル
）法により育成した。この磁性ガーネット膜の波長０．
８μｍにおける感度定数Ｃを２５０〜３５０にの温度範
囲で測定したところ第２図のような結果を得た。この図
において、３００Ｋにおける感度定数ＣＬ３００Ｋ）を
基準にすると、２５０〜３５０にの温度範囲全域で、感
度定数Ｃの値は、±０．１（％）以内の変化を示したに
過ぎなかった。この変化率は、（Ｙ、Ｌａ、Ｂ ｉ）
３Ｆｅ５０１゜に於ける変化率よりも小さく、温度特性
の良好な磁界センサ用材料として優れている。(Example 2) Yttrium oxide, holmium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed and melted by heating to form a melt on a single crystal substrate of gadolinium, gallium, and garnet substituted with calcium, magnesium, and zirconium (Y
A magnetic garnet single crystal film having a composition of Ho Bi ) 0.8 0.8 1.4 Fe 5012 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.
When the sensitivity constant C at 8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 2 were obtained. In this figure, when the sensitivity constant CL at 300K (300K) is used as a reference, the value of the sensitivity constant C only showed a change within ±0.1 (%) over the entire temperature range from 250 to 350K. This rate of change is (Y, La, B i)
The rate of change is smaller than that of 3Fe501°, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｈｏ Ｂ ｌ ） Ｆ
ｅ ５０．８ ０．８ １．４
０．２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y Ho B l ) F
For e 50.8 0.8 1.4 0.2, temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths were extremely small.
（実施例３）
酸化イツトリウム、酸化ホルミウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に（Ｙ
Ｈｏ Ｂｉ ）０．５ ０．５ ２．０
Ｆｅ５０．□なる組成を有する磁性ガーネッ） ４１結
品膜をＬＰＥ （リキッド・フェイズ・エピタキシャル
）法により育成した。この磁性ガーネット膜の波長０，
８μｍにおける感度定数Ｃを２５０〜３５０にの温度範
囲で測定したところ、第３図のような結果を得た。３０
０Ｋにおける感度定数Ｃ＋５ｏｏｘ＋を基準にすると２
５０〜３５０にの温度範囲全域で、感度定数Ｃの値は、
±０．５（％）以内の変化を示したに過ぎなかった。こ
の変化率は、（Ｙ、Ｌａ、Ｂｉ） Ｆｅ５Ｏ１２に於
ける変化率よりも小さく、温度特性の良好な磁界センサ
用材料として優れている。(Example 3) Yttrium oxide, holmium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed and melted by heating to form a melt on a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrate (Y
Ho Bi )0.5 0.5 2.0 Fe50. A magnetic garnet (41) conjunctival film having a composition of □ was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0,
When the sensitivity constant C at 8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 3 were obtained. 30
Based on the sensitivity constant C+5oox+ at 0K, it is 2
Over the temperature range from 50 to 350, the value of the sensitivity constant C is
It only showed a change within ±0.5 (%). This rate of change is smaller than the rate of change in (Y, La, Bi) Fe5O12, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｈｏ Ｂ １ ） Ｆ
ｅ ｓｏ、５ ０．５ ２．０
０．１２は波長０．８μｍのみならず、他の波長におけ
る感度定数の温度変化も極めて小さかった。Also, this (Y Ho B 1 ) F
For e so, 5 0.5 2.0 0.12, temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths were extremely small.
（実施例４）
酸化イツトリウム、酸化ホルミウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に （Ｙ
Ｈｏ Ｂｉ ）０．９ １．６ ０．５
Ｆ ｅ ５０１２なる組成を有する磁性ガーネット単結
晶膜をＬＰＥ （リキッド・フェイズ・エピタキシャル
）法により育成した。この磁性ガーネット膜の波長０．
８μｍにおける感度定数Ｃを２５０〜３５０にの温度範
囲で測定したところ、第４図のような結果を得た。３０
０Ｋにおける感度定数Ｃ＋＊ｏｏｘ＋を基準にすると、
２５０〜３５０にの温度範囲全域で、感度定数Ｃの値は
、±１，０（％）以内の変化を示したに過ぎなかった。(Example 4) Yttrium oxide, holmium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed, heated, and melted to form a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrate (Y
A magnetic garnet single crystal film having a composition of Ho Bi ) 0.9 1.6 0.5 Fe 5012 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.
When the sensitivity constant C at 8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 4 were obtained. 30
Based on the sensitivity constant C++*oox+ at 0K,
Over the entire temperature range from 250 to 350 degrees Celsius, the value of the sensitivity constant C showed only a change within ±1.0 (%).
この変化率は、（Ｙ、Ｌａ、Ｂｉ） Ｆｅ５Ｏ１２に
於ける変化率よりも小さく、温度特性の良好な磁界セン
サ用材料として優れている。This rate of change is smaller than the rate of change in (Y, La, Bi) Fe5O12, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｈｏ Ｂ ｉ） Ｆ ｅ ｓ
Ｏ，９１，８０，５
０，２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y Ho Bi) Fe s
For O,91,80,50,2, temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths were extremely small.
［発明の効果コ
以上説明したように本発明を用いれば、感度定数Ｃが大
きく、なお且つその温度変動が極めて小さいという優れ
た特性をＨする磁界センサ用磁気光学ガーネットを得る
ことが可能となり、工業的利用価値は極めて大である。[Effects of the Invention] As explained above, by using the present invention, it is possible to obtain a magneto-optical garnet for a magnetic field sensor that has the excellent characteristics of having a large sensitivity constant C and extremely small temperature fluctuation. The industrial value is extremely large.
第１図は（Ｙ Ｈｏ Ｂｉ ）Ｆｅ５０１
．５ ０．１ １．４
１゜の波長０．８μｍでの感度定数Ｃの温度変動を示す
図、第２図は （Ｙ Ｈｏ Ｂｉ ）０．
８ ０．８ １．４
Ｆ ｅ ｓ Ｏ１２の波長０．８μｍでの感度定数Ｃの
温度変動を示す図、第３図は（Ｙ Ｈｏ Ｂｉ
Ｏ，５０，５
１，５）Ｆｅ５０１２の波長０．８．ｃｚｍでの感度定
数Ｃの温度変動を示す図、第４図は （Ｙ Ｈ。
０．９
Ｂｉ ）Ｆｅ５０，２の波長０．８μｍでの１．８
０．５
感度定数Ｃの温度変動を示す図、第５図は磁界中での磁
性ガーネットのファラデー回転を示す図、第６図は（Ｙ
ＩＬ ａ 、 Ｂ ｔ ） Ｆ ｅ ｓ ＯＩ ２
の波長０．８μｍでの感度定数Ｃの温度変動を示す図で
ある。
Ｔ（Ｋ）
第５図
タト部石μ界強ｒｇ：、Ｃ０ｅ）
Ｔ （Ｋ）Figure 1 shows (Y Ho Bi )Fe501
．． 5 0.1 1.4 Figure 2 shows the temperature fluctuation of the sensitivity constant C at a wavelength of 0.8 μm at 1°.
8 0.8 1.4 F e s A diagram showing the temperature fluctuation of the sensitivity constant C at a wavelength of 0.8 μm in O12, Figure 3 is (Y Ho Bi
O,50,5 1,5) Wavelength of Fe5012 0.8. Figure 4 shows the temperature variation of the sensitivity constant C in czm.
0.5 A diagram showing the temperature fluctuation of the sensitivity constant C, Figure 5 is a diagram showing the Faraday rotation of magnetic garnet in a magnetic field, and Figure 6 is a diagram showing the (Y
IL a, B t ) Fe s OI 2
It is a figure which shows the temperature fluctuation of the sensitivity constant C at the wavelength of 0.8 micrometer. T (K) Fig. 5 Tatobeishi μ field strength rg:, C0e) T (K)
Claims (1)
＿５Ｏ＿１＿２（但し、０．１≦Ｘ≦１．６、０．５≦
Ｙ≦２．０）の化学式で表されることを特徴とする磁界
センサ用磁気光学ガーネット。1, (Y_3_-_X_-_YHo_XBi_Y)Fe
_5O_1_2 (However, 0.1≦X≦1.6, 0.5≦
A magneto-optical garnet for magnetic field sensors, characterized in that it is represented by the chemical formula Y≦2.0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1514789A JPH02196100A (en) | 1989-01-26 | 1989-01-26 | Magneto-optical garnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1514789A JPH02196100A (en) | 1989-01-26 | 1989-01-26 | Magneto-optical garnet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02196100A true JPH02196100A (en) | 1990-08-02 |
Family
ID=11880691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1514789A Pending JPH02196100A (en) | 1989-01-26 | 1989-01-26 | Magneto-optical garnet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02196100A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0521527A2 (en) * | 1991-07-05 | 1993-01-07 | Mitsubishi Gas Chemical Company, Inc. | Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138396A (en) * | 1985-12-12 | 1987-06-22 | Sumitomo Metal Mining Co Ltd | Magnetic garnet material for magneto-optical element |
-
1989
- 1989-01-26 JP JP1514789A patent/JPH02196100A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62138396A (en) * | 1985-12-12 | 1987-06-22 | Sumitomo Metal Mining Co Ltd | Magnetic garnet material for magneto-optical element |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0521527A2 (en) * | 1991-07-05 | 1993-01-07 | Mitsubishi Gas Chemical Company, Inc. | Magnetic garnet single crystal for measuring magnetic field intensity and optical type magnetic field intensity measuring apparatus |
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