JPH0369597A - Magneto-optical garnet - Google Patents
Magneto-optical garnetInfo
- Publication number
- JPH0369597A JPH0369597A JP20293989A JP20293989A JPH0369597A JP H0369597 A JPH0369597 A JP H0369597A JP 20293989 A JP20293989 A JP 20293989A JP 20293989 A JP20293989 A JP 20293989A JP H0369597 A JPH0369597 A JP H0369597A
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- garnet
- saturation magnetization
- magnetic field
- magneto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 33
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims abstract description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims abstract description 4
- 229910052691 Erbium Inorganic materials 0.000 claims abstract description 4
- 229910052693 Europium Inorganic materials 0.000 claims abstract description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims abstract description 4
- 229910052689 Holmium Inorganic materials 0.000 claims abstract description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims abstract description 4
- 229910052772 Samarium Inorganic materials 0.000 claims abstract description 4
- 229910052771 Terbium Inorganic materials 0.000 claims abstract description 4
- 229910052775 Thulium Inorganic materials 0.000 claims abstract description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims abstract description 3
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 3
- 230000005415 magnetization Effects 0.000 abstract description 18
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910000416 bismuth oxide Inorganic materials 0.000 abstract description 7
- 229910052810 boron oxide Inorganic materials 0.000 abstract description 7
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 abstract description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910000464 lead oxide Inorganic materials 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 abstract description 7
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009877 rendering Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 3
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、磁気光学ガーネットに関するもので、詳しく
は、磁界センサに適した磁気光学ガーネットに関するも
のである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magneto-optic garnet, and more particularly to a magneto-optic garnet suitable for a magnetic field sensor.
［従来の技術］
磁気光学ガーネットには、第１図に示すように、その飽
和磁化よりも小さな外部磁界中では、ファラデー回転能
が外部磁界に比例するという性質がある。この性質を利
用して、磁気光学ガーネットの磁界センサへの応用が提
案されている。[Prior Art] As shown in FIG. 1, magneto-optic garnet has the property that in an external magnetic field smaller than its saturation magnetization, its Faraday rotation ability is proportional to the external magnetic field. Utilizing this property, the application of magneto-optic garnet to magnetic field sensors has been proposed.
このセンサ性能を高めるために、磁気光学ガーネットに
Ｂｉをドープし、単位磁界当たりのファラデー回転能（
飽和磁界中でのファラデー回転。In order to improve this sensor performance, magneto-optic garnet is doped with Bi, and the Faraday rotation power per unit magnetic field (
Faraday rotation in a saturated magnetic field.
θ と飽和磁界Ｍｓとの比θｐ ／ Ｍ ｓ ＋以下こ
れを感度定数Ｃと記す。）を大きくした（Ｙ、Ｌａ。The ratio between θ and the saturation magnetic field Ms is θp/Ms+, which is hereinafter referred to as a sensitivity constant C. ) was increased (Y, La.
Ｂｉ）３ Ｆｅｓ ｏ１２が提案されている（Ｊ、 Ｈ
ａｇ。Bi) 3 Fes o12 is proposed (J, H
ag.
Ｓｏｃ、 Ｊｐｎ、、Ｖｏｌ、１１．Ｓｕｐｐｌｅｍｅ
ｎｔ、Ｎｏ、 Ｓ １ （１９８７）４０１−４０４
） 。Soc, Jpn,, Vol, 11. Supplement
nt, No. S 1 (1987) 401-404
).
［発明が解決しようとする課題］
第１図から明らかなように、磁気光学ガーネットを使用
する磁界センサが測定しうる最大の磁界強度は、磁性ガ
ーネットの飽和磁界Ｍｓとなる。[Problems to be Solved by the Invention] As is clear from FIG. 1, the maximum magnetic field strength that can be measured by a magnetic field sensor using magneto-optic garnet is the saturation magnetic field Ms of the magnetic garnet.
ちなみに、上記（Ｙ、Ｌａ、Ｂ ｉ） ３Ｆｅ、０．２
では、第１表に示すように、飽和磁化が１８００Ｇであ
１、それ以上の磁界を測定することは、不可能であった
。By the way, the above (Y, La, B i) 3Fe, 0.2
In this case, as shown in Table 1, the saturation magnetization was 1800G, which was 1, and it was impossible to measure a magnetic field larger than that.
そこで、本発明の技術的課題は、Ｂｉをドープした感度
定数Ｃの大きな磁気光学ガーネットにおいて、その飽和
磁化Ｍｓか大きく、最大測定磁界の大きな磁界センサに
適した磁気光学ガーネットを提供することにある。Therefore, the technical problem of the present invention is to provide a magneto-optic garnet doped with Bi with a large sensitivity constant C, which has a large saturation magnetization Ms and is suitable for a magnetic field sensor with a large maximum measured magnetic field. .
［課題を解決するための手段］
本発明によれば、（Ｒ３−Ｘ Ｂ ｉ ｘ ） （Ｆ
ｅ ５−ＹＡＹ）Ｏ１２（但し、ＲはＹ、Ｌａ、Ｐｒ
、Ｎｄ。[Means for solving the problem] According to the present invention, (R3-X B i x ) (F
e 5-YAY)O12 (However, R is Y, La, Pr
, Nd.
Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙ
ｂ、Ｌｕのうち少なくとも１種、Ａは５ｃＩｎ（７）う
ち少なくとも１種、０．１≦Ｘ≦２．０゜０．１≦Ｙ≦
１．０）の化学式で表されることを特徴とする磁気光学
ガーネットが得られる。Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b, at least one kind among Lu, A at least one kind among 5cIn (7), 0.1≦X≦2.0゜0.1≦Y≦
A magneto-optical garnet characterized by being represented by the chemical formula 1.0) is obtained.
［実施例］ 以下、本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
実施例１゜ 酸化イツトリウム、酸化鉄、酸化スカンジウム。Example 1゜ Yttrium oxide, iron oxide, scandium oxide.
酸化鉛、酸化ビスマス、酸化ボロンを混合、加熱溶解し
た融液よ１、非磁性ガーネット基板上に（Ｙ２．９
Ｂ ｉ ｏ、＋ ） （Ｆ Ｃ４，ｅｒ Ｓ Ｃｏ
、＋ ） ０１２なる組成を有する磁性ガーネット
単結晶膜をＬＰＥ（リキッド、フェイズ、エピタキシャ
ル）法により育成した。この磁性ガーネットの飽和磁化
Ｍｓを測定したところ、第１表に示すように。A melt of lead oxide, bismuth oxide, and boron oxide mixed and heated was placed on a non-magnetic garnet substrate (Y2.9
B io, + ) (F C4,er S Co
, +)012 was grown by the LPE (liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was as shown in Table 1.
２０００Ｇであった。この値は、比較例（Ｙ。It was 2000G. This value is based on the comparative example (Y.
Ｌａ、 Ｂ ｉ） ３ Ｆ ｅ、０１２における飽和
磁化の値。La, B i) 3 Fe, saturation magnetization value at 012.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
材料として優れている。It is larger than 1800G and is excellent as a sensor material with a large maximum measurable magnetic field.
実施例２゜ 酸化イツトリウム、酸化鉄、酸化スカンジウム。Example 2゜ Yttrium oxide, iron oxide, scandium oxide.
酸化鉛、酸化ビスマス、酸化ボロンを混合、加熱溶解し
た融液よ１、非磁性ガーネット基板上に（Ｙｌ、５
Ｂ ｉ １．５ ） （Ｆ Ｃ４，５Ｓ Ｃ０，５）
０１２なる組成を有する磁性ガーネット単結晶膜を
ＬＰＥ（リキッド、フェイズ、エピタキシャル）法によ
り育成した。この磁性ガーネットの飽和磁化Ｍｓを測定
したところ、第１表に示すように。A melt of lead oxide, bismuth oxide, and boron oxide mixed and heated is placed on a non-magnetic garnet substrate (Yl, 5
B i 1.5) (F C4,5S C0,5)
A magnetic garnet single crystal film having a composition of 012 was grown by an LPE (liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was as shown in Table 1.
３０００Ｇであった。この値は、比較例（Ｙ。It was 3000G. This value is based on the comparative example (Y.
Ｌａ、 Ｂ ｉ） ３ Ｆ Ｃ５０＋２における飽和
磁化の値。La, B i) Value of saturation magnetization at 3F C50+2.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
祠料として優れている。It is larger than 1800G and is excellent as a sensor abrasive material with a large maximum measurable magnetic field.
実施例３゜ 酸化イツトリウム、酸化鉄、酸化スカンジウム。Example 3゜ Yttrium oxide, iron oxide, scandium oxide.
酸化鉛、酸化ビスマス、酸化ボロンを混合、加熱溶解し
た融液よ１、非磁性ガーネット基板上に（Ｙｌ、 Ｂ
ｉ２．ｏ ） （Ｆ Ｃ４，ｏ ＳＣ＋、ｏ ）
０１２なる組成を有する磁性ガーネット単結晶膜を
ＬＰＥ（リキッド、フェイズ、エピタキシャル）法によ
り育成した。この磁性ガーネットの飽和磁化Ｍｓを測定
したところ、第１表に示すように。A melt of lead oxide, bismuth oxide, and boron oxide mixed and heated is placed on a non-magnetic garnet substrate (Yl, B
i2. o) (FC4, o SC+, o)
A magnetic garnet single crystal film having a composition of 012 was grown by an LPE (liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was as shown in Table 1.
２０００Ｇであった。この値は、比較例（Ｙ。It was 2000G. This value is based on the comparative example (Y.
Ｌａ、Ｂｉ）３ Ｆｅ５Ｏ１２における飽和磁化の値。La, Bi)3 Value of saturation magnetization in Fe5O12.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
材料として優れている。It is larger than 1800G and is excellent as a sensor material with a large maximum measurable magnetic field.
実施例４゜
酸化イツトリウム、酸化鉄、酸化スカンジウム酸化鉛、
酸化ビスマス、酸化ボロンを混合、加熱溶解した融液よ
１、非磁性ガーネット基板上に（Ｙ２．９ Ｂ ｉ
ｏ、＋ ） （Ｆ Ｃ４，ｃｒ Ｉ ｎＯ，Ｉ
） ０１２なる組成を有する磁性ガーネット単結晶膜
をＬＰＥ（リキッド、フェイズ、エピタキシャル）法に
より育成した。この磁性ガーネットの飽和磁化Ｍｓを測
定したところ、第１表に示すように３２０００Ｇであっ
た。この値は、比較例（Ｙ。Example 4 Yttrium oxide, iron oxide, scandium oxide, lead oxide,
A melt of bismuth oxide and boron oxide mixed and heated was placed on a non-magnetic garnet substrate (Y2.9 B i
o, + ) (F C4, cr I nO, I
) A magnetic garnet single crystal film having a composition of 012 was grown by the LPE (liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was 32000G as shown in Table 1. This value is the same as that of the comparative example (Y.
Ｌａ、Ｂｉ）３ Ｆｅ５ ｏ１２における飽和磁化の値
。La, Bi) Saturation magnetization value in 3 Fe5 o12.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
材料として優れている。It is larger than 1800G and is excellent as a sensor material with a large maximum measurable magnetic field.
実施例５゜ 酸化イツトリウム、酸化鉄、酸化スカンジウム。Example 5゜ Yttrium oxide, iron oxide, scandium oxide.
酸化鉛、酸化ビスマス、酸化ボロンを混合、加熱溶解し
た融液よ１、非磁性ガーネット基板上に（Ｙｌ、 Ｂ
ｊ １．５ ） （Ｆ Ｃ４，ｓ Ｉ ｎｏ、＋
） ０１２なる組成を有する磁性ガーネット単結晶
膜をＬＰＥ（リキッド、フェイズ、エピタキシャル）法
により育成した。この磁性ガーネットの飽和磁化Ｍｓを
測定したところ、第１表に示すように。A melt of lead oxide, bismuth oxide, and boron oxide mixed and heated is placed on a non-magnetic garnet substrate (Yl, B
j 1.5 ) (F C4, s I no, +
) A magnetic garnet single crystal film having a composition of 012 was grown by an LPE (liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was as shown in Table 1.
３０００Ｇであった。この値は、比較例（Ｙ。It was 3000G. This value is based on the comparative example (Y.
Ｌａ、Ｂｉ）３ Ｆｅｓ ０１２における飽和磁化の値
。La, Bi) Saturation magnetization value in 3 Fes 012.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
材料として優れている。It is larger than 1800G and is excellent as a sensor material with a large maximum measurable magnetic field.
実施例６゜
酸化イツトリウム、酸化鉄、酸化スカンジウム酸化鉛、
酸化ビスマス、酸化ボロンを混合、加熱溶解した融液よ
１、非磁性ガーネット基板上に（Ｙ＋、 Ｂ ｉ２．
ｏ ） （Ｆ ｅ４．ｏ Ｉ ｎ＋、ｏ ） ０
１２なる組成を有する磁性ガーネット単結晶膜をＬＰＥ
（リキッド、フェイズ、エピタキシャル）法により育成
した。この磁性ガーネットの飽和磁化Ｍｓを測定したと
ころ、第１表に示すように。Example 6゜Yttrium oxide, iron oxide, scandium oxide, lead oxide,
Bismuth oxide and boron oxide were mixed, heated and melted, and then melted (1) was deposited on a non-magnetic garnet substrate (Y+, B i2.
o ) (F e4. o I n+, o ) 0
A magnetic garnet single crystal film having a composition of 12 was subjected to LPE.
(liquid, phase, epitaxial) method. When the saturation magnetization Ms of this magnetic garnet was measured, it was as shown in Table 1.
２０００Ｇであった。この値は、比較例（Ｙ。It was 2000G. This value is based on the comparative example (Y.
Ｌａ、Ｂｉ）３ Ｆｅ５Ｏ１２における飽和磁化の値。La, Bi)3 Value of saturation magnetization in Fe5O12.
１８００Ｇよりも大きく、最大測定磁界の大きなセンサ
材料として優れている。It is larger than 1800G and is excellent as a sensor material with a large maximum measurable magnetic field.
以 下 余 白
本発明は、上記実施例のみならず、
化学式 （Ｒ：＋−ｘ Ｂ ｉ ｘ ） （Ｆ ｅ
ｓ−ｙ Ａｙ ） ０１２（但し、ＲはＹ、Ｌａ、Ｐｒ
、Ｎｄ、Ｓｍ、Ｅｕ。The present invention applies not only to the above-mentioned embodiments, but also to the chemical formula (R:+-x B ix ) (F e
s-y Ay) 012 (However, R is Y, La, Pr
, Nd, Sm, Eu.
Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ。Gd, Tb, Dy, Ho, Er, Tm, Yb.
Ｌｕのうち少なくとも１種、ＡはＳｃ、Ｉｎのうち少な
くとも１種、０．１≦Ｘ≦２．０゜０．１≦Ｙ≦１．０
）の化学式で表される磁気光学ガーネット全般に適用さ
れるものである。At least one type of Lu, A is at least one type of Sc, In, 0.1≦X≦2.0゜0.1≦Y≦1.0
) is applicable to all magneto-optical garnets represented by the chemical formula:
［発明の効果］
以上説明したように、本発明によれば、Ｂｉをドープし
た感度定数Ｃの大きな磁気光学ガーネット、において、
その飽和磁化Ｍｓが大きく、最大測定磁界の大きな磁界
センサに適した磁気光学ガーネットを提供することが可
能となった。[Effects of the Invention] As explained above, according to the present invention, in a magneto-optic garnet doped with Bi and having a large sensitivity constant C,
It has become possible to provide a magneto-optic garnet that has a large saturation magnetization Ms and is suitable for a magnetic field sensor with a large maximum measured magnetic field.
第１図は磁界中での磁気光学ガーネットのファラデー回
転を示す図である。FIG. 1 is a diagram showing Faraday rotation of a magneto-optic garnet in a magnetic field.
Claims (1)
＿Ｙ）Ｏ＿１＿２（但し、ＲはＹ、Ｌａ、Ｐｒ、Ｎｄ、
Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙ
ｂ、Ｌｕのうち少なくとも１種、ＡはＳｃ、Ｉｎのうち
少なくとも１種、０．１≦Ｘ≦２．０、０．１≦Ｙ≦１
．０）の化学式で表されることを特徴とする磁気光学ガ
ーネット。1, (R_3_-_xBi_x) (Fe_5_-_YA
_Y) O_1_2 (However, R is Y, La, Pr, Nd,
Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Y
b, at least one of Lu, A is at least one of Sc, In, 0.1≦X≦2.0, 0.1≦Y≦1
．． A magneto-optical garnet characterized by being represented by the chemical formula 0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20293989A JPH0369597A (en) | 1989-08-07 | 1989-08-07 | Magneto-optical garnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20293989A JPH0369597A (en) | 1989-08-07 | 1989-08-07 | Magneto-optical garnet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0369597A true JPH0369597A (en) | 1991-03-25 |
Family
ID=16465666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20293989A Pending JPH0369597A (en) | 1989-08-07 | 1989-08-07 | Magneto-optical garnet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0369597A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5547613A (en) * | 1994-07-05 | 1996-08-20 | Fdk Corporation | Magneto-optical element material formed of magnetic garnet single crystals |
| US5616176A (en) * | 1994-07-01 | 1997-04-01 | Shin-Etsu Chemical Co., Ltd. | Oxide garnet single crystal |
-
1989
- 1989-08-07 JP JP20293989A patent/JPH0369597A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5616176A (en) * | 1994-07-01 | 1997-04-01 | Shin-Etsu Chemical Co., Ltd. | Oxide garnet single crystal |
| US5547613A (en) * | 1994-07-05 | 1996-08-20 | Fdk Corporation | Magneto-optical element material formed of magnetic garnet single crystals |
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