JPH02164723A - Magneto-optical garnet - Google Patents
Magneto-optical garnetInfo
- Publication number
- JPH02164723A JPH02164723A JP31843288A JP31843288A JPH02164723A JP H02164723 A JPH02164723 A JP H02164723A JP 31843288 A JP31843288 A JP 31843288A JP 31843288 A JP31843288 A JP 31843288A JP H02164723 A JPH02164723 A JP H02164723A
- Authority
- JP
- Japan
- Prior art keywords
- garnet
- magnetic
- sensitivity constant
- wavelength
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002223 garnet Substances 0.000 title claims abstract description 32
- 239000000126 substance Substances 0.000 claims abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 33
- 239000000463 material Substances 0.000 abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052727 yttrium Inorganic materials 0.000 abstract 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 abstract 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical group [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 description 4
- 229910052810 boron oxide Inorganic materials 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910000464 lead oxide Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 239000011777 magnesium Chemical group 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910003451 terbium oxide Inorganic materials 0.000 description 4
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 4
- -1 zirconium-substituted gadolinium Chemical class 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052726 zirconium Chemical group 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Compounds Of Iron (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、磁界センサに用いられる磁気光学ガーネット
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a magneto-optic garnet used in a magnetic field sensor.
［従来の技術］
磁性ガーネットには、その飽和磁化よりも小さな外部磁
界中では、ファラデー回転能が外部磁界に比例するとい
う性質がある（第５図参照）。[Prior Art] Magnetic garnet has a property that in an external magnetic field smaller than its saturation magnetization, its Faraday rotation ability is proportional to the external magnetic field (see FIG. 5).
この性質を利用して、磁性ガーネットの磁界センサへの
応用が提案されている。Utilizing this property, the application of magnetic garnet to magnetic field sensors has been proposed.
このセンサの分解能を高めるために、磁性ガーネットに
Ｂｉをドープし単位磁界当たりのファラデー回転能（飽
和磁界中でのファラデー回転θ。In order to increase the resolution of this sensor, magnetic garnet is doped with Bi to obtain Faraday rotation per unit magnetic field (Faraday rotation θ in a saturated magnetic field).
と飽和磁界Ｍ との比θ、／Ｍ８．以下これを感度定数
Ｃと記す）を大きくした（ＹＬａＢｉ）３Ｆ ｅ ｓ
Ｏ１２が提案されてい°る（Ｊ、 Ｍａｇｎ、 Ｓｏｃ
、 Ｊｐｎ、ＶＩｌ、１１．Ｓｕｐｐｌｅｍｅｎｔ、Ｎ
Ｏ，Ｓｌ（１９ｇ？）４０１−４０４） 。and the saturation magnetic field M θ, /M8. This is hereinafter referred to as the sensitivity constant C) is increased (YLaBi)3F e s
O12 has been proposed (J, Magn, Soc
, Jpn, VIl, 11. Supplement, N
O, Sl (19g?) 401-404).
［発明が解決しようとする課題］
磁性ガーネットを使用する磁界センサの実用化には、実
用温度範囲（例えば２５０〜３５０Ｋ）で感度定数Ｃが
可能な限り変化しないことが望まれるが上記（ＹＬａＢ
ｉ）３Ｆｅ５０Ｉ２では、波長０．８μｍの３００Ｋに
おける感度定数Ｃ（３００Ｋ）を基準にすると２５０Ｋ
における感度定数Ｃ（２５０Ｋ）、３５０Ｋにおける感
度定数ＣＣ３００Ｋ）は、第６図に示すように、夫々２
（％）、＋２（％）変動する。[Problem to be solved by the invention] In order to put a magnetic field sensor using magnetic garnet into practical use, it is desirable that the sensitivity constant C does not change as much as possible in the practical temperature range (for example, 250 to 350 K).
i) For 3Fe50I2, the sensitivity constant C (300K) at 300K at a wavelength of 0.8 μm is 250K.
The sensitivity constant C at 250K and the sensitivity constant CC300K at 350K are respectively 2 as shown in Figure 6.
(%), +2 (%) fluctuation.
そこで、本発明の技術的課題は、Ｂｉをドープした感度
定数Ｃの大きな磁性ガーネットにおいて、２５０〜３０
０にの温度範囲で、その感度定数Ｃの変動が極めて小さ
い磁界センサ用材料を提供することにある。Therefore, the technical problem of the present invention is to obtain a Bi-doped magnetic garnet with a large sensitivity constant C of 250 to 30
It is an object of the present invention to provide a material for a magnetic field sensor whose sensitivity constant C has extremely small fluctuations in a temperature range of 0.
［課題を解決するための手段］
本発明によれば、（Ｙ Ｔｂ Ｂｉ ）３−
Ｘ−Ｙ Ｘ Ｙ
Ｆｅ５０１２（但し、０．０５≦ Ｘ ≦１．０゜０．
５≦Ｙ ≦２．０）の化学式で表されることを特徴とす
る磁界センサ用磁気光学ガーネットが得られる。[Means for solving the problem] According to the present invention, (Y Tb Bi )3-
X-Y X Y Fe5012 (However, 0.05≦X≦1.0゜0.
A magneto-optical garnet for magnetic field sensors is obtained, which is represented by the chemical formula (5≦Y≦2.0).
［実施例］ 以下本発明の実施例について説明する。[Example] Examples of the present invention will be described below.
（実施例１）
酸化イツトリウム、酸化テルビウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換がトリ
ニウム、ガリウム、ガーネット単結晶基板に（Ｙ
Ｔｂ Ｂｉ ）ＦＯ，９５０，０５２，０
ｅ５０□２なる組成を有する磁性ガーネット単結晶膜を
ＬＰＥ （リキッド・フェイズ・エピタキシャル）法に
より育成した。この磁性ガーネット膜の波長０．８μｍ
における感度定数Ｃを２５０〜３５０にの温度範囲でδ
Ｉ定したところ第１図のような結果を得た。この図にお
いて、３００Ｋにおける感度定数Ｃ（３００Ｋ）を基準
にすると２５０〜３５０にの温度範囲全域で、感度定数
Ｃの値は、±１（％）以内の変化を示したにすぎなかっ
た。この変化率は、（ＹＬａＢｉ） Ｆｅ５Ｏ１２に
於ける変化率よりも小さく、温度特性の良好な磁界セン
サ用材料として優れている。(Example 1) Calcium, magnesium, and zirconium substitutions were made on thorinium, gallium, and garnet single crystal substrates from a melt obtained by mixing and heating yttrium oxide, terbium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide (Y
A magnetic garnet single crystal film having a composition of Tb Bi )FO, 950,052,0 e50□2 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.8 μm
The sensitivity constant C in the temperature range from 250 to 350 δ
When the temperature was determined, the results shown in Figure 1 were obtained. In this figure, when the sensitivity constant C at 300K (300K) is used as a reference, the value of the sensitivity constant C only showed a change within ±1 (%) over the entire temperature range from 250 to 350°C. This rate of change is smaller than the rate of change in (YLaBi)Fe5O12, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｔｂ Ｂｉ ）Ｆｅ５０
．９５ ０．０５ ２．０
０１２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Moreover, this (Y Tb Bi )Fe50
．． 95 0.05 2.0 012 had extremely small temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths.
（実施例２）
酸化イツトリウム、酸化テルビウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に（Ｙ
Ｔｂ Ｂｉ ）Ｆｌ、０ ０．２ １．８
ｅ５０．２なる組成を有する磁性ガーネット単結晶膜を
ＬＰＥ （リキッド・フェイズ・エピタキシャル）法に
より育成した。この磁性ガーネット膜の波長０．８μｍ
における感度定数Ｃを２５０〜３５０ Ｋの温度範囲で
７１１ｊ定したところ第２図のような結果を得た。この
図において３００Ｋにおける感度定数Ｃ（３００Ｋ）を
基準にすると２５０〜３５０にの温度範囲全域で、感度
定数Ｃの値は、±１（％）以内の変化を示したに過ぎな
かった。この変化率は、（Ｙ Ｌ ａ Ｂ ｉ） Ｆ
ｅ ５０１２に於ける変化率よりも小さく、温度特性
の良好な磁界センサ用材料として優れている。(Example 2) Yttrium oxide, terbium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed, heated, and melted to form a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrate (Y
A magnetic garnet single crystal film having a composition of Tb Bi ) Fl, 0 0.2 1.8 e50.2 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.8 μm
When the sensitivity constant C was determined at 711j in the temperature range of 250 to 350 K, the results shown in FIG. 2 were obtained. In this figure, when the sensitivity constant C at 300K (300K) is used as a reference, the value of the sensitivity constant C only showed a change within ±1 (%) over the entire temperature range from 250 to 350°C. This rate of change is (Y L a B i) F
The rate of change is smaller than that of e5012, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｔ ｂ Ｂ １） Ｆ ｅ
ｓｌ、０ ０．２ １．８
０．２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y T b B 1) Fe
sl, 0 0.2 1.8 0.2 had extremely small temperature changes in the sensitivity constant not only at the wavelength of 0.8 μm but also at other wavelengths.
（実施例３）
酸化イツトリウム、酸化テルビウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット単結晶基板に（Ｙ
Ｔｂ Ｂｉ ）１．３ ０．３ １．５
Ｆ ｅ ５０□２なる組成を宵する磁性ガーネット単結
晶膜をＬＰＥ （リキッド・フェイズ・エピタキシャル
）法により育成した。この磁性ガーネット膜の波長０．
８μｍにおける感度定数Ｃを２５０〜３５０にの温度範
囲で測定したところ第３図のような結果を得た。この図
において、３００Ｋにおける感度定数Ｃ（３００Ｋ）を
基準にすると２５０〜３５０にの温度範囲全域で、感度
定数Ｃの値は、土０．５（％）以内の変化を示したに過
ぎなかった。(Example 3) Yttrium oxide, terbium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed, heated, and melted to form a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet single crystal substrate (Y
A magnetic garnet single crystal film having a composition of Tb Bi )1.3 0.3 1.5 Fe 50□2 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.
When the sensitivity constant C at 8 .mu.m was measured in a temperature range of 250 to 350, the results shown in FIG. 3 were obtained. In this figure, based on the sensitivity constant C at 300K (300K), the value of the sensitivity constant C only showed a change within 0.5 (%) over the entire temperature range from 250 to 350. .
この変化率は、（ＹＬａＢｉ）３Ｆｅ５０１２に於ける
変化率よりも小さく、温度特性の良好な磁界センサ用材
料として優れている。This rate of change is smaller than the rate of change in (YLaBi)3Fe5012, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｔ ｂ Ｂ ｉ） Ｆ ｅ
５１．３ ０．３ Ｌ、５
０．２は波長０．８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y T b B i) F e
For 51.3 0.3 L and 5 0.2, the temperature change in the sensitivity constant was extremely small not only at the wavelength of 0.8 μm but also at other wavelengths.
（実施例４）
酸化イツトリウム、酸化テルビウム、酸化ビスマス、酸
化鉄、酸化鉛、酸化ボロンを混合、加熱溶解した融液よ
りカルシウム、マグネシウム、ジルコニウム置換ガドリ
ニウム、ガリウム、ガーネット１１結晶基板に （Ｙ
Ｔｂ Ｂｉ ）１．５ １．０ ０．
５
Ｆ ｅ ｓ Ｏ１２なる組成を有する磁性ガーネット単
結晶膜をＬＰＥ （リキッド・フェイズ・エピタキシャ
ル）法により育成した。この磁性ガーネット膜の波長０
．８μｍにおける感度定数Ｃを２５０〜３５０にの温度
範囲でａｌｌ定したところ第４図のような結果を得た。(Example 4) Yttrium oxide, terbium oxide, bismuth oxide, iron oxide, lead oxide, and boron oxide were mixed, heated and melted, and then melted to form a calcium, magnesium, and zirconium-substituted gadolinium, gallium, and garnet 11 crystal substrate (Y
Tb Bi )1.5 1.0 0.
A magnetic garnet single crystal film having a composition of 5 F e s O12 was grown by the LPE (liquid phase epitaxial) method. The wavelength of this magnetic garnet film is 0.
．． When the sensitivity constant C at 8 .mu.m was determined in a temperature range of 250 to 350, the results shown in FIG. 4 were obtained.
この図において、３００Ｋにおける感度定数Ｃ（３００
Ｋ）を基準にすると、２５０〜３５０にの温度範囲全域
で、感度定数Ｃの値は、±１．０（％）以内の変化を示
したに過ぎなかった。この変化率は、（ＹＬａＢ ｉ）
３Ｆｅｓ Ｏ１２に於ける変化率よりも小さく、温度
特性の良好な磁界センサ用材料として優れている。In this figure, the sensitivity constant C at 300K (300
K), the value of the sensitivity constant C only showed a change within ±1.0 (%) over the entire temperature range from 250 to 350°C. This rate of change is (YLaB i)
The rate of change is smaller than that of 3Fes O12, making it an excellent material for magnetic field sensors with good temperature characteristics.
また、この（Ｙ Ｔ ｂ Ｂ ｉ） Ｆ ｅ
５１．５ １．０ ０．５
０１２は波長０６８μｍのみならず、他の波長における
感度定数の温度変化も極めて小さかった。Also, this (Y T b B i) F e
51.5 1.0 0.5 012 had extremely small temperature changes in the sensitivity constant not only at the wavelength of 068 μm but also at other wavelengths.
［発明の効果］
以上説明したように本発明を用いれば、感度定数Ｃが大
きくなお且つその温度変動が極めて小さいという優れた
特性を有する磁界センサ用磁気光学ガーネットを得るこ
とが可能となり、工業的利用価値は極めて大である。[Effects of the Invention] As explained above, by using the present invention, it is possible to obtain a magneto-optical garnet for magnetic field sensors that has excellent characteristics such as a large sensitivity constant C and extremely small temperature fluctuation, and is suitable for industrial use. The utility value is extremely large.
第１図は（Ｙ Ｔｂ Ｂｉ ）Ｆｅ５００
．９５ ０．０５ ２．０
１□の波長０．８μｍでの感度定数Ｃの温度変動を示す
図、第２図は（Ｙ Ｔｂ Ｂｉ ）Ｆｌ、
０ ０．２ １．８
ｅ５０Ｉ２の波長０．８μｍでの感度定数Ｃの温度変動
を示す図、第３図は（Ｙ Ｔｂ Ｂｉｌ、３
０．３ １゜
５）Ｆｅ５０１２の波長１８μｍでの感度定数Ｃの温度
変動を示す図、第４図は（Ｙ Ｔｂ１．５ １．
０
−ａｉ ）Ｆｅ５０１２の波長０．８μｍでの感度
０．５
定数Ｃの温度変動を示す図、第５図は磁界中での磁性ガ
ーネットのファラデー回転を示す図、第６図は（ＹＬａ
Ｂｉ）３Ｆｅ５０１２の波長０．８μｍでの感度定数Ｃ
の温度変動を示す図である。
第１図
第２図
温 度 （Ｋ）
潟 廖 （Ｋ）
度
（Ｋ）
外邪磁ＲζＧ）
第４図
第６図
濡 厘 （Ｋ）Figure 1 shows (Y Tb Bi )Fe500
．． 95 0.05 2.0 1□ A diagram showing the temperature fluctuation of the sensitivity constant C at a wavelength of 0.8 μm, Figure 2 is (Y Tb Bi ) Fl,
0 0.2 1.8 Figure 3 shows the temperature fluctuation of the sensitivity constant C at a wavelength of 0.8 μm for e50I2.
0.3 1°5) Figure 4 is a diagram showing the temperature fluctuation of the sensitivity constant C of Fe5012 at a wavelength of 18 μm.
0 - ai ) Fe5012 at a wavelength of 0.8 μm Sensitivity 0.5 A diagram showing the temperature fluctuation of constant C, Figure 5 is a diagram showing the Faraday rotation of magnetic garnet in a magnetic field, and Figure 6 is (YLa
Bi) Sensitivity constant C of 3Fe5012 at wavelength 0.8 μm
FIG. Figure 1 Figure 2 Temperature (K) Temperature (K) Degree (K) Figure 4 Figure 6 Temperature (K)
Claims (1)
＿５Ｏ＿１＿２（但し、０．０５≦Ｘ≦１．０，０．５
≦Ｙ≦２．０）の化学式で表されることを特徴とする磁
界センサ用磁気光学ガーネット。1, (Y_3_-_X_-_YTb_XBi_Y)Fe
_5O_1_2 (However, 0.05≦X≦1.0, 0.5
A magneto-optical garnet for magnetic field sensors, characterized in that it is represented by the chemical formula: ≦Y≦2.0).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31843288A JPH02164723A (en) | 1988-12-19 | 1988-12-19 | Magneto-optical garnet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31843288A JPH02164723A (en) | 1988-12-19 | 1988-12-19 | Magneto-optical garnet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02164723A true JPH02164723A (en) | 1990-06-25 |
Family
ID=18099088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31843288A Pending JPH02164723A (en) | 1988-12-19 | 1988-12-19 | Magneto-optical garnet |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02164723A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5709811A (en) * | 1995-04-11 | 1998-01-20 | Matsushita Electric Industrial Co., Ltd. | Magnetic material for microwave and high-frequency circuit component using the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60255696A (en) * | 1984-05-30 | 1985-12-17 | Nippon Hoso Kyokai <Nhk> | Production of bismuth-substituted magnetic garnet single crystal |
| JPS63163815A (en) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | Magnetic field sensor |
| JPS63285196A (en) * | 1987-05-19 | 1988-11-22 | Agency Of Ind Science & Technol | Magneto-optical element material |
-
1988
- 1988-12-19 JP JP31843288A patent/JPH02164723A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60255696A (en) * | 1984-05-30 | 1985-12-17 | Nippon Hoso Kyokai <Nhk> | Production of bismuth-substituted magnetic garnet single crystal |
| JPS63163815A (en) * | 1986-12-26 | 1988-07-07 | Toshiba Corp | Magnetic field sensor |
| JPS63285196A (en) * | 1987-05-19 | 1988-11-22 | Agency Of Ind Science & Technol | Magneto-optical element material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5709811A (en) * | 1995-04-11 | 1998-01-20 | Matsushita Electric Industrial Co., Ltd. | Magnetic material for microwave and high-frequency circuit component using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Hirakawa et al. | Magnetic properties of potassium iron group fluorides KMF3 | |
| Hulliger et al. | Magnetic properties of the cerium monochalcogenides | |
| Fujii et al. | Magnetic properties of single crystals of the system (Fe1− xNix) 2P | |
| JPH0354198A (en) | Oxide garnet single crystal | |
| Yoshioka et al. | Magnetic Properties of Fe x TiS2 System | |
| Li et al. | Magnetic properties of ferromagnetic GdN | |
| Davis et al. | Magnetic properties of thulium metal | |
| Chan et al. | Synthesis, magnetic properties, and colossal magnetoresistance of Eu 13.97 Gd 0.03 MnSb 11 | |
| JPH02164723A (en) | Magneto-optical garnet | |
| Hillenius et al. | Magnetic susceptibility of iron-doped 2 H-Nb Se 2 | |
| Vasiliu et al. | Some magnetic properties and the phase equilibrium of the compounds in the CaxNi1–xFe2O4 system | |
| Iida et al. | Field-Heating Effect–Anomalous Thermomagnetization Curves Observed in Hexagonal LuFe2O4 | |
| JPH0288430A (en) | Magneto-optical garnet | |
| JPH02196100A (en) | Magneto-optical garnet | |
| JPH0757693B2 (en) | Magneto-optic garnet | |
| JP2679157B2 (en) | Terbium iron garnet and magneto-optical element using the same | |
| Plaskett et al. | The Effect of Substrate Orientation and Growth Temperature on the Magnetic Anisotropy of Eu x Y 3− x Fe 5 O 12 Films | |
| Meyer et al. | Effect of Ni substitution in Gd-Co amorphous thin films | |
| Arons | Concentration dependence of the magnetic susceptibility of TbH2− x and TbD2− x | |
| JPH038725A (en) | Magneto-optical garnet | |
| Abe et al. | Magnetic properties of ordered alloy AuMn2 | |
| JPH0369597A (en) | Magneto-optical garnet | |
| JPS5680106A (en) | (110) garnet liquid phase epitaxial film | |
| Miyata et al. | Magneto-thermoelectric powers of nickel single crystals | |
| Liu et al. | Magnetic state in GdMg at high pressure |