JPS6424098A - Heat treatment of compound semiconductor single crystal - Google Patents
Heat treatment of compound semiconductor single crystalInfo
- Publication number
- JPS6424098A JPS6424098A JP17763487A JP17763487A JPS6424098A JP S6424098 A JPS6424098 A JP S6424098A JP 17763487 A JP17763487 A JP 17763487A JP 17763487 A JP17763487 A JP 17763487A JP S6424098 A JPS6424098 A JP S6424098A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- heat treatment
- semiconductor single
- temp
- compound semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To decrease the nonuniformity of a GaAs compd. semiconductor single crystal by cooling the single crystal at a specific temp. gradient in a specific temp. range at the time of subjecting said single crystal to a heat treatment. CONSTITUTION:The GaAs compd. semiconductor single crystal produced by a liquid sealing Czochralski method is cooled in such a manner that the temp. gradient in at least the 800-900 deg.C temp. range attains <=0.8 deg.C per minute in the cooling process thereof at the time of subjecting the above-mentioned single crystal to the heat treatment in order to decrease the nonuniformity thereof. The crystal having the substrate characteristics uniform within the crystals and between the crystals is thereby obtd.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17763487A JPS6424098A (en) | 1987-07-15 | 1987-07-15 | Heat treatment of compound semiconductor single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17763487A JPS6424098A (en) | 1987-07-15 | 1987-07-15 | Heat treatment of compound semiconductor single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6424098A true JPS6424098A (en) | 1989-01-26 |
Family
ID=16034428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17763487A Pending JPS6424098A (en) | 1987-07-15 | 1987-07-15 | Heat treatment of compound semiconductor single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6424098A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02293399A (en) * | 1989-05-08 | 1990-12-04 | Showa Denko Kk | Heat treatment of gaas ingot |
US10124154B2 (en) | 2005-06-10 | 2018-11-13 | Acclarent, Inc. | Catheters with non-removable guide members useable for treatment of sinusitis |
US10188413B1 (en) | 2004-04-21 | 2019-01-29 | Acclarent, Inc. | Deflectable guide catheters and related methods |
US10206821B2 (en) | 2007-12-20 | 2019-02-19 | Acclarent, Inc. | Eustachian tube dilation balloon with ventilation path |
US10716629B2 (en) | 2006-09-15 | 2020-07-21 | Acclarent, Inc. | Methods and devices for facilitating visualization in a surgical environment |
-
1987
- 1987-07-15 JP JP17763487A patent/JPS6424098A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02293399A (en) * | 1989-05-08 | 1990-12-04 | Showa Denko Kk | Heat treatment of gaas ingot |
US10188413B1 (en) | 2004-04-21 | 2019-01-29 | Acclarent, Inc. | Deflectable guide catheters and related methods |
US10124154B2 (en) | 2005-06-10 | 2018-11-13 | Acclarent, Inc. | Catheters with non-removable guide members useable for treatment of sinusitis |
US10716629B2 (en) | 2006-09-15 | 2020-07-21 | Acclarent, Inc. | Methods and devices for facilitating visualization in a surgical environment |
US10206821B2 (en) | 2007-12-20 | 2019-02-19 | Acclarent, Inc. | Eustachian tube dilation balloon with ventilation path |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY115099A (en) | Process for producing silicon semiconductor wafers with low defect density | |
EP0663688A3 (en) | Semiconductor substrate and process for producing same. | |
EP0390672A3 (en) | Method for heat process of silicon | |
MY100449A (en) | High-oxygen-content silicon monocrystal substrate for semiconductor devices and production method therefor | |
ES459971A1 (en) | Method of purifying silicon | |
JPS5792591A (en) | Production of single crystal | |
JPS6424098A (en) | Heat treatment of compound semiconductor single crystal | |
ATE171982T1 (en) | CRYSTALLIZATION OF FRUCTOSE | |
JPS51111476A (en) | Method of liquid phase epitaxial crystal growth | |
JPS6472999A (en) | Heat treatment of compound semiconductor single crystal | |
JPS5717496A (en) | Liquid phase growing method for single crystal of compound semiconductor | |
EP0939068A4 (en) | ||
JPS57129896A (en) | Liquid phase epitaxial growing apparatus | |
JPS6487598A (en) | Treatment of raw material for compound semiconductor polycrystal | |
Tsal | Influence of the rate of deformation and of heat treatment on the kinetics of electrification of an NaCl crystal. | |
JPS5412587A (en) | Warpage reducing method of lithium tantalate single crystal wafers | |
JPS649824A (en) | Method for thermally treating quartz glass | |
JPS6424087A (en) | Device for pulling up single crystal | |
JPS5669297A (en) | Method of growing to large-size single crystal | |
Bashmakov et al. | Twinning of Bismuth Crystals During Cyclic Heat Treatment | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
JPS54141388A (en) | Production of compound semiconductor single crystal | |
JPS6036397A (en) | Apparatus for growing compound single crystal | |
Barabash et al. | The Effect of Nitrogen Diffusion on the Form of Nodal Points in the Reciprocal Lattice of Niobium Single Crystals | |
JPS6451440A (en) | Thermal method of regulating structure of crystalline polyorganophosphazene |