JPS6424087A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPS6424087A JPS6424087A JP17904687A JP17904687A JPS6424087A JP S6424087 A JPS6424087 A JP S6424087A JP 17904687 A JP17904687 A JP 17904687A JP 17904687 A JP17904687 A JP 17904687A JP S6424087 A JPS6424087 A JP S6424087A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- crystal
- pulling
- peripheral face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To produce a single crystal which has fewer lattice defects and maintains a prescribed lattice constant by adding an impurity atom to the melt of the single crystal raw material in a crucible and disposing magnets under specific conditions to the outside peripheral face of the side wall of the crucible at the time of pulling up the single crystal from the melt. CONSTITUTION:The single crystal material 2 in the crucible 3 is melted by a high-frequency heater 1 provided on the outside peripheral face of the crucible 3. The magnets 6 are disposed on the outside peripheral face of the heater 1 in the 8 crystal orientation directions between <110> and <100> with respect to a <100> seed crystal. The impurity atoms 4 which are liable to be magnetized are added to the single crystal material 2 made into the melt state. The <100> single crystal 5 is used and while the crucible 3 or the crystal 5 is kept slowly rotated, the single crystal by the <100> pulling up shaft is successively prepd. The impurity atoms 4 are condensed only near the crucible 3 in the 8 crystal bearings between <110> and <100> at this time. The microdefects in a wafer and the nonuniformity of the lattice constants by the added impurity atoms 4 are thereby suppressed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17904687A JPS6424087A (en) | 1987-07-20 | 1987-07-20 | Device for pulling up single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17904687A JPS6424087A (en) | 1987-07-20 | 1987-07-20 | Device for pulling up single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424087A true JPS6424087A (en) | 1989-01-26 |
Family
ID=16059177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17904687A Pending JPS6424087A (en) | 1987-07-20 | 1987-07-20 | Device for pulling up single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424087A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246192A (en) * | 1988-03-29 | 1989-10-02 | Toshiba Corp | Device for pulling up single crystal |
| JPH02229784A (en) * | 1989-03-03 | 1990-09-12 | Nec Corp | Single crystal pulling-up device |
-
1987
- 1987-07-20 JP JP17904687A patent/JPS6424087A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01246192A (en) * | 1988-03-29 | 1989-10-02 | Toshiba Corp | Device for pulling up single crystal |
| JPH02229784A (en) * | 1989-03-03 | 1990-09-12 | Nec Corp | Single crystal pulling-up device |
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