JPS5412587A - Warpage reducing method of lithium tantalate single crystal wafers - Google Patents

Warpage reducing method of lithium tantalate single crystal wafers

Info

Publication number
JPS5412587A
JPS5412587A JP7712877A JP7712877A JPS5412587A JP S5412587 A JPS5412587 A JP S5412587A JP 7712877 A JP7712877 A JP 7712877A JP 7712877 A JP7712877 A JP 7712877A JP S5412587 A JPS5412587 A JP S5412587A
Authority
JP
Japan
Prior art keywords
single crystal
lithium tantalate
tantalate single
reducing method
crystal wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7712877A
Other languages
Japanese (ja)
Inventor
Sadao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7712877A priority Critical patent/JPS5412587A/en
Publication of JPS5412587A publication Critical patent/JPS5412587A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce warpage and increase the yield of products by heat-treating a lithium tantalate single crystal wafer at a specified temperature.
COPYRIGHT: (C)1979,JPO&Japio
JP7712877A 1977-06-30 1977-06-30 Warpage reducing method of lithium tantalate single crystal wafers Pending JPS5412587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7712877A JPS5412587A (en) 1977-06-30 1977-06-30 Warpage reducing method of lithium tantalate single crystal wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7712877A JPS5412587A (en) 1977-06-30 1977-06-30 Warpage reducing method of lithium tantalate single crystal wafers

Publications (1)

Publication Number Publication Date
JPS5412587A true JPS5412587A (en) 1979-01-30

Family

ID=13625149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7712877A Pending JPS5412587A (en) 1977-06-30 1977-06-30 Warpage reducing method of lithium tantalate single crystal wafers

Country Status (1)

Country Link
JP (1) JPS5412587A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348094B1 (en) * 1999-03-18 2002-02-19 Shin-Etsu Chemical Co., Ltd. SAW or LSAW device piezoelectric single crystal wafer and method of making
EP1518947A2 (en) * 2003-09-26 2005-03-30 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained.
US7323050B2 (en) 2003-03-06 2008-01-29 Shin-Etsu Chemical Co., Ltd. Method of producing lithium tantalate crystal

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6348094B1 (en) * 1999-03-18 2002-02-19 Shin-Etsu Chemical Co., Ltd. SAW or LSAW device piezoelectric single crystal wafer and method of making
US7323050B2 (en) 2003-03-06 2008-01-29 Shin-Etsu Chemical Co., Ltd. Method of producing lithium tantalate crystal
EP1518947A2 (en) * 2003-09-26 2005-03-30 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained.
EP1518947A3 (en) * 2003-09-26 2007-03-07 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and crystal thereby obtained.
US7374612B2 (en) 2003-09-26 2008-05-20 Shin-Etsu Chemical Co., Ltd. Method of producing single-polarized lithium tantalate crystal and single-polarized lithium tantalate crystal

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