JPS52109865A - Inpurity adding method to silicon - Google Patents

Inpurity adding method to silicon

Info

Publication number
JPS52109865A
JPS52109865A JP2613076A JP2613076A JPS52109865A JP S52109865 A JPS52109865 A JP S52109865A JP 2613076 A JP2613076 A JP 2613076A JP 2613076 A JP2613076 A JP 2613076A JP S52109865 A JPS52109865 A JP S52109865A
Authority
JP
Japan
Prior art keywords
inpurity
silicon
adding method
semiconductor
thru
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2613076A
Other languages
Japanese (ja)
Other versions
JPS5328741B2 (en
Inventor
Masashi Yamaguchi
Kiyohisa Fujinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2613076A priority Critical patent/JPS52109865A/en
Publication of JPS52109865A publication Critical patent/JPS52109865A/en
Publication of JPS5328741B2 publication Critical patent/JPS5328741B2/ja
Granted legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain P type Si semiconductor having the desired resistivity, by radiating high speed neutron to the semiconductor Si mono crystal, converting a part of Si into Al with the nuclear reaction, and annealing at the temperatures of 700 thru 800°C for one hour.
COPYRIGHT: (C)1977,JPO&Japio
JP2613076A 1976-03-12 1976-03-12 Inpurity adding method to silicon Granted JPS52109865A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2613076A JPS52109865A (en) 1976-03-12 1976-03-12 Inpurity adding method to silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2613076A JPS52109865A (en) 1976-03-12 1976-03-12 Inpurity adding method to silicon

Publications (2)

Publication Number Publication Date
JPS52109865A true JPS52109865A (en) 1977-09-14
JPS5328741B2 JPS5328741B2 (en) 1978-08-16

Family

ID=12184970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2613076A Granted JPS52109865A (en) 1976-03-12 1976-03-12 Inpurity adding method to silicon

Country Status (1)

Country Link
JP (1) JPS52109865A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081262A (en) * 1973-11-12 1975-07-01
JPS5094879A (en) * 1973-12-14 1975-07-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5081262A (en) * 1973-11-12 1975-07-01
JPS5094879A (en) * 1973-12-14 1975-07-28

Also Published As

Publication number Publication date
JPS5328741B2 (en) 1978-08-16

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