JPS52131464A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS52131464A JPS52131464A JP4900976A JP4900976A JPS52131464A JP S52131464 A JPS52131464 A JP S52131464A JP 4900976 A JP4900976 A JP 4900976A JP 4900976 A JP4900976 A JP 4900976A JP S52131464 A JPS52131464 A JP S52131464A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- wafer
- thickness
- increase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000008188 pellet Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10157—Shape being other than a cuboid at the active surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase the wafer diameter with no increase of the substantial thickness of the wafer by securing thinner thickness of the wafer at the pellet section than the thickness at the linkage section other than the pellet.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51049009A JPS584815B2 (en) | 1976-04-27 | 1976-04-27 | Manufacturing method of semiconductor device |
SE7704782A SE424787B (en) | 1976-04-27 | 1977-04-26 | SET TO MAKE SEMICONDUCTOR TABLES WITH VALID AT LEAST ONE PN TRANSITION |
DE19772718781 DE2718781C2 (en) | 1976-04-27 | 1977-04-27 | Method for manufacturing a plurality of semiconductor components |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51049009A JPS584815B2 (en) | 1976-04-27 | 1976-04-27 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52131464A true JPS52131464A (en) | 1977-11-04 |
JPS584815B2 JPS584815B2 (en) | 1983-01-27 |
Family
ID=12819146
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51049009A Expired JPS584815B2 (en) | 1976-04-27 | 1976-04-27 | Manufacturing method of semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS584815B2 (en) |
DE (1) | DE2718781C2 (en) |
SE (1) | SE424787B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5582442A (en) * | 1978-12-15 | 1980-06-21 | Westinghouse Electric Corp | Semiconductor device and method of fabricating same |
JP2013243287A (en) * | 2012-05-22 | 2013-12-05 | Disco Abrasive Syst Ltd | Method for processing plate-like object |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2422257A1 (en) * | 1977-11-28 | 1979-11-02 | Silicium Semiconducteur Ssc | FILLING AND GLASSIVIATION PROCESS AND NEW FILLING STRUCTURE |
JPS56131955A (en) * | 1980-09-01 | 1981-10-15 | Hitachi Ltd | Semiconductor device |
EP0264564B1 (en) * | 1986-09-30 | 1992-11-11 | Siemens Aktiengesellschaft | Silicon temperature sensor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
DE2422345A1 (en) * | 1973-05-09 | 1975-11-20 | Siemens Ag | Prodn of semiconductor device with mesa element - has annular substrate portion round element or its annular depression |
DE2323438C3 (en) * | 1973-05-09 | 1978-12-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Method for manufacturing a semiconductor component |
-
1976
- 1976-04-27 JP JP51049009A patent/JPS584815B2/en not_active Expired
-
1977
- 1977-04-26 SE SE7704782A patent/SE424787B/en not_active IP Right Cessation
- 1977-04-27 DE DE19772718781 patent/DE2718781C2/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5582442A (en) * | 1978-12-15 | 1980-06-21 | Westinghouse Electric Corp | Semiconductor device and method of fabricating same |
JPS6346978B2 (en) * | 1978-12-15 | 1988-09-20 | Westinghouse Electric Corp | |
JP2013243287A (en) * | 2012-05-22 | 2013-12-05 | Disco Abrasive Syst Ltd | Method for processing plate-like object |
Also Published As
Publication number | Publication date |
---|---|
DE2718781C2 (en) | 1983-08-18 |
SE7704782L (en) | 1977-10-28 |
JPS584815B2 (en) | 1983-01-27 |
DE2718781A1 (en) | 1977-11-10 |
SE424787B (en) | 1982-08-09 |
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