JPS52131464A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52131464A
JPS52131464A JP4900976A JP4900976A JPS52131464A JP S52131464 A JPS52131464 A JP S52131464A JP 4900976 A JP4900976 A JP 4900976A JP 4900976 A JP4900976 A JP 4900976A JP S52131464 A JPS52131464 A JP S52131464A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
wafer
thickness
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4900976A
Other languages
Japanese (ja)
Other versions
JPS584815B2 (en
Inventor
Hiroshi Gamo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP51049009A priority Critical patent/JPS584815B2/en
Priority to SE7704782A priority patent/SE424787B/en
Priority to DE19772718781 priority patent/DE2718781C2/en
Publication of JPS52131464A publication Critical patent/JPS52131464A/en
Publication of JPS584815B2 publication Critical patent/JPS584815B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)
  • Dicing (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To increase the wafer diameter with no increase of the substantial thickness of the wafer by securing thinner thickness of the wafer at the pellet section than the thickness at the linkage section other than the pellet.
COPYRIGHT: (C)1977,JPO&Japio
JP51049009A 1976-04-27 1976-04-27 Manufacturing method of semiconductor device Expired JPS584815B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP51049009A JPS584815B2 (en) 1976-04-27 1976-04-27 Manufacturing method of semiconductor device
SE7704782A SE424787B (en) 1976-04-27 1977-04-26 SET TO MAKE SEMICONDUCTOR TABLES WITH VALID AT LEAST ONE PN TRANSITION
DE19772718781 DE2718781C2 (en) 1976-04-27 1977-04-27 Method for manufacturing a plurality of semiconductor components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51049009A JPS584815B2 (en) 1976-04-27 1976-04-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52131464A true JPS52131464A (en) 1977-11-04
JPS584815B2 JPS584815B2 (en) 1983-01-27

Family

ID=12819146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51049009A Expired JPS584815B2 (en) 1976-04-27 1976-04-27 Manufacturing method of semiconductor device

Country Status (3)

Country Link
JP (1) JPS584815B2 (en)
DE (1) DE2718781C2 (en)
SE (1) SE424787B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582442A (en) * 1978-12-15 1980-06-21 Westinghouse Electric Corp Semiconductor device and method of fabricating same
JP2013243287A (en) * 2012-05-22 2013-12-05 Disco Abrasive Syst Ltd Method for processing plate-like object

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2422257A1 (en) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc FILLING AND GLASSIVIATION PROCESS AND NEW FILLING STRUCTURE
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
EP0264564B1 (en) * 1986-09-30 1992-11-11 Siemens Aktiengesellschaft Silicon temperature sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
DE2422345A1 (en) * 1973-05-09 1975-11-20 Siemens Ag Prodn of semiconductor device with mesa element - has annular substrate portion round element or its annular depression
DE2323438C3 (en) * 1973-05-09 1978-12-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5582442A (en) * 1978-12-15 1980-06-21 Westinghouse Electric Corp Semiconductor device and method of fabricating same
JPS6346978B2 (en) * 1978-12-15 1988-09-20 Westinghouse Electric Corp
JP2013243287A (en) * 2012-05-22 2013-12-05 Disco Abrasive Syst Ltd Method for processing plate-like object

Also Published As

Publication number Publication date
DE2718781C2 (en) 1983-08-18
SE7704782L (en) 1977-10-28
JPS584815B2 (en) 1983-01-27
DE2718781A1 (en) 1977-11-10
SE424787B (en) 1982-08-09

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