SE7704782L - WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE - Google Patents

WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE

Info

Publication number
SE7704782L
SE7704782L SE7704782A SE7704782A SE7704782L SE 7704782 L SE7704782 L SE 7704782L SE 7704782 A SE7704782 A SE 7704782A SE 7704782 A SE7704782 A SE 7704782A SE 7704782 L SE7704782 L SE 7704782L
Authority
SE
Sweden
Prior art keywords
manufacture
way
semiconductor device
wafer
thickness
Prior art date
Application number
SE7704782A
Other languages
Swedish (sv)
Other versions
SE424787B (en
Inventor
H Gamo
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7704782L publication Critical patent/SE7704782L/en
Publication of SE424787B publication Critical patent/SE424787B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface

Abstract

PURPOSE:To increase the wafer diameter with no increase of the substantial thickness of the wafer by securing thinner thickness of the wafer at the pellet section than the thickness at the linkage section other than the pellet.
SE7704782A 1976-04-27 1977-04-26 SET TO MAKE SEMICONDUCTOR TABLES WITH VALID AT LEAST ONE PN TRANSITION SE424787B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51049009A JPS584815B2 (en) 1976-04-27 1976-04-27 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
SE7704782L true SE7704782L (en) 1977-10-28
SE424787B SE424787B (en) 1982-08-09

Family

ID=12819146

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7704782A SE424787B (en) 1976-04-27 1977-04-26 SET TO MAKE SEMICONDUCTOR TABLES WITH VALID AT LEAST ONE PN TRANSITION

Country Status (3)

Country Link
JP (1) JPS584815B2 (en)
DE (1) DE2718781C2 (en)
SE (1) SE424787B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2422257A1 (en) * 1977-11-28 1979-11-02 Silicium Semiconducteur Ssc FILLING AND GLASSIVIATION PROCESS AND NEW FILLING STRUCTURE
US4235645A (en) * 1978-12-15 1980-11-25 Westinghouse Electric Corp. Process for forming glass-sealed multichip semiconductor devices
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
EP0264564B1 (en) * 1986-09-30 1992-11-11 Siemens Aktiengesellschaft Silicon temperature sensor
JP5930840B2 (en) * 2012-05-22 2016-06-08 株式会社ディスコ Processing method of plate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3628107A (en) * 1969-05-05 1971-12-14 Gen Electric Passivated semiconductor device with peripheral protective junction
DE2323438C3 (en) * 1973-05-09 1978-12-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Method for manufacturing a semiconductor component
DE2422345A1 (en) * 1973-05-09 1975-11-20 Siemens Ag Prodn of semiconductor device with mesa element - has annular substrate portion round element or its annular depression

Also Published As

Publication number Publication date
DE2718781C2 (en) 1983-08-18
SE424787B (en) 1982-08-09
JPS52131464A (en) 1977-11-04
DE2718781A1 (en) 1977-11-10
JPS584815B2 (en) 1983-01-27

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