JPS5372467A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS5372467A JPS5372467A JP14804976A JP14804976A JPS5372467A JP S5372467 A JPS5372467 A JP S5372467A JP 14804976 A JP14804976 A JP 14804976A JP 14804976 A JP14804976 A JP 14804976A JP S5372467 A JPS5372467 A JP S5372467A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- restricting
- causes
- temperature rise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000005596 ionic collisions Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/221—Ion beam deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To manufacture the semiconductor device having a good performance, by restricting the temperature rise of substrate due to causes other than ion collision.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14804976A JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14804976A JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5372467A true JPS5372467A (en) | 1978-06-27 |
Family
ID=15443989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14804976A Pending JPS5372467A (en) | 1976-12-08 | 1976-12-08 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5372467A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60183721A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evapolating apparatus |
JPS60183720A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evaporating apparatus |
-
1976
- 1976-12-08 JP JP14804976A patent/JPS5372467A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60183721A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evapolating apparatus |
JPS60183720A (en) * | 1984-03-01 | 1985-09-19 | Mitsubishi Electric Corp | Thin film evaporating apparatus |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5351970A (en) | Manufacture for semiconductor substrate | |
JPS533120A (en) | Control circuit | |
JPS5395571A (en) | Semiconductor device | |
JPS5372467A (en) | Manufacture for semiconductor device | |
JPS5379451A (en) | Circurator | |
JPS53114355A (en) | Manufacture of semiconductor device | |
SE7704782L (en) | WAY TO MANUFACTURE A SEMICONDUCTOR DEVICE | |
JPS5225572A (en) | Resin-seal type semiconductor device | |
JPS542070A (en) | Manufacture for semiconductor element | |
JPS524175A (en) | Groups iii-v compounds semiconductor device | |
JPS5227277A (en) | Darlington connction type semiconductor unit | |
JPS538072A (en) | Semiconductor device | |
JPS5331934A (en) | Variable phase-shift circuit | |
JPS531471A (en) | Manufacture for semiconductor device | |
JPS5372453A (en) | Manufacture for semiconductor device | |
JPS52137221A (en) | Memory device | |
JPS5265667A (en) | Semiconductor device | |
JPS5382181A (en) | Manufacture for semiconductor device | |
JPS5384560A (en) | Manufacture for mould type semiconductor device | |
JPS51134579A (en) | Semiconductor device | |
JPS5384691A (en) | Production of semiconductor device | |
JPS531428A (en) | Semiconductor memory | |
JPS5336462A (en) | Manufacture of semiconductor device | |
JPS5318951A (en) | Production of semiconductor device | |
JPS52104072A (en) | High voltage semiconductor device |