JPS60183721A - Thin film evapolating apparatus - Google Patents
Thin film evapolating apparatusInfo
- Publication number
- JPS60183721A JPS60183721A JP4076684A JP4076684A JPS60183721A JP S60183721 A JPS60183721 A JP S60183721A JP 4076684 A JP4076684 A JP 4076684A JP 4076684 A JP4076684 A JP 4076684A JP S60183721 A JPS60183721 A JP S60183721A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- substrate
- heat
- thin film
- injection hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、金属蒸気を基板に蒸着させる薄膜蒸着装置
の熱遮蔽に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a heat shield for a thin film deposition apparatus that deposits metal vapor onto a substrate.
従来の薄膜蒸着装置を第1図に示す。図において、1は
基板13に蒸着ずべき蒸着物質である金属2を内部に収
容するるつぼ、3ば該るつぼ1の上面に形成された噴射
孔、4は上記るつぼ1の噴射孔3から噴射された金属蒸
気、5ば上記るつぼ1を加熱するフィラメント、6は交
流電源、7は直流電源、8ばグリッド、9は上記金属蒸
気4をイオン化するための熱電子を放出するイオン化フ
ィラメント、10ば交流電源、11は直流電源、12は
上記イオン化された金属蒸気を加速する加速電極、14
は上記基板13の表面に蒸着形成された薄膜、15は直
流電源、16は上記るつぼ1からの輻射熱を遮蔽する熱
シールド板、17は所定の真空度に保持された直空容器
である。A conventional thin film deposition apparatus is shown in FIG. In the figure, reference numeral 1 denotes a crucible containing metal 2, which is a vapor deposition substance to be deposited on a substrate 13, 3 an injection hole formed on the upper surface of the crucible 1, and 4 a metal 2, which is an evaporation material to be evaporated onto a substrate 13, which is injected from the injection hole 3 of the crucible 1. 5 is a filament that heats the crucible 1; 6 is an AC power source; 7 is a DC power source; 8 is a grid; 9 is an ionizing filament that emits thermoelectrons to ionize the metal vapor 4; 10 is an AC power source; A power source, 11 is a DC power source, 12 is an accelerating electrode for accelerating the ionized metal vapor, 14
15 is a DC power supply; 16 is a heat shield plate for shielding radiant heat from the crucible 1; and 17 is a direct-air container maintained at a predetermined degree of vacuum.
次に動作について説明する。Next, the operation will be explained.
第1図において、フィラメント5は電源6によって加熱
され、電源7によって与えられた電圧により電子をるつ
ぼ1に照射し、該るつぼ1は該電子の衝突を受けて加熱
される。これによりるつぼj内の金属2は蒸発し、該金
1.1s Hf、気はp(″i射孔3から貴空中に照射
される。該イ)射された金1ij’E范気4はイオン化
フィラメント9.電源10.グリッド3(によって発生
された!;ハ電子の衝突を受のでイオン化され、該イオ
ン化された金属蒸気4は加速電極12と電源15とによ
って加速され、基板13に射突し゛ζ范着薄映14を作
る。In FIG. 1, a filament 5 is heated by a power source 6, and a voltage applied by a power source 7 irradiates the crucible 1 with electrons, and the crucible 1 is heated by being bombarded by the electrons. As a result, the metal 2 in the crucible j evaporates, and the gold 1.1s Hf and air are irradiated into the noble air from the injection hole 3. The ionized filament 9. Power source 10. Grid 3 (generated by!; C) is ionized by the collision of electrons, and the ionized metal vapor 4 is accelerated by the accelerating electrode 12 and the power source 15 and impinges on the substrate 13. I will make 14 thin films.
ところで、この薄膜蒸着装置においζは、−J−、記金
属蒸気4を発生セしめる際、上記るっぽ1は相当の高温
になり、そのため輻射熱が該るつは1の表面から周囲に
放出されることとなる。そこでこの従来装置では、るつ
ぼ1の側面及び底面の外力には」−2輻射熱を反射させ
るF;(レール1′板16を配置しており、また上面に
おいては上記加速電極12を!;l)シールド板に共用
している。しかしごの加速電極I2はるつぼ1からかな
り」二方に離れた位置にあるため金JjJS FA気4
は該電極12 a++分を拡がって通ることとなり、そ
のための加速電極12には大きな開LJ部が形成されて
いる。このためるつぼlの噴射孔3側の面からの輻射熱
は、」二記開LI部を通、って基板13乙こ到達して該
基板13を加!;1tするごとになる。そこで従来の薄
膜系着装’+VCでは、基板の617L度」二昇を防止
するためには基板13を冷却する必要があった。By the way, in this thin film deposition apparatus, ζ is -J-, and when the metal vapor 4 is generated, the above-mentioned Ruppo 1 reaches a considerably high temperature, so that radiant heat is released from the surface of the Ruppo 1 to the surroundings. It will be done. Therefore, in this conventional device, the external force on the side and bottom surfaces of the crucible 1 is provided with a rail 1' plate 16 that reflects the radiant heat, and the accelerating electrode 12 is placed on the top surface. It is shared by the shield plate. However, since the accelerating electrode I2 is located quite far away from the crucible 1,
passes through the electrode 12a++, and a large open LJ portion is formed in the acceleration electrode 12 for this purpose. Therefore, the radiant heat from the surface of the crucible on the injection hole 3 side passes through the open LI section, reaches the substrate 13, and heats the substrate 13. ;It becomes every 1t. Therefore, in the conventional thin film type mounting VC, it is necessary to cool the substrate 13 in order to prevent the substrate from heating up to 617L degrees.
本発明は、上記のような従来のものの欠点をなくすため
になされたもので、るつぼの噴射孔が形成された面の近
傍に該噴射孔に対応する部分に開「1が形成された!j
ハシールト板を配設することにより、るつぼからの輻射
熱が基板にあまり届がない、J、うにして基板・\のj
ib影響を小さくできる薄膜蒸:17装置を提供するこ
とを目的としている。The present invention has been made in order to eliminate the drawbacks of the conventional products as described above, and an opening "1" is formed in the vicinity of the surface of the crucible where the injection hole is formed and in a portion corresponding to the injection hole.
By installing the shield plate, the radiant heat from the crucible does not reach the substrate.
The purpose of the present invention is to provide a thin film evaporation device that can reduce the effects of ib.
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第2図は本発明の一実施例を示す。し1において、第1
し1と同一符号は同−又は相当部分を示し、21は耐熱
性の断!;ハ材からなる2枚の熱シールド板であり、こ
れは上記るつぼ1の噴射孔3が形成されている面の少し
上方に配設され、るっぽ1と同電位になっている。そし
て上記各熱シールド板2■の」−記るつぼド1の噴射孔
3に対応する部分には、開]」22が形成されており、
該各間[ゴ22はるつぼlと反対側に行くほど径が大き
い頂角30゜の円錐形の外表面上に位置している。FIG. 2 shows an embodiment of the invention. In 1, the first
The same numerals as 1 indicate the same or equivalent parts, and 21 indicates the heat resistance. ; These are two heat shield plates made of material, which are disposed slightly above the surface of the crucible 1 on which the injection holes 3 are formed, and are at the same potential as the crucible 1. An opening 22 is formed in a portion of each heat shield plate 2 that corresponds to the injection hole 3 of the crucible 1.
Between the crucibles 1 and 22, the crucible 22 is located on the outer surface of a conical shape with an apex angle of 30°, the diameter of which increases toward the opposite side from the crucible 1.
次に作用効果について説明する。Next, the effects will be explained.
本実施例装;b:により基板13に薄膜を形成するには
、従来と同様にるつぼ1から金属蒸気を噴出せしめる訳
であるが、本実施例装置の熱シールド板21の開l」2
2の面位は小さいため、るつぼ1の噴射孔3から噴出す
る金1jjS %%、気は開口22を通るが、るつぼ1
からの基板13への輻射熱のほとんどはごの熱シールド
板21により遮断され、基板13に到達する熱ば従来の
ものと比較して卵重に少なく、従って熱の影響が小さく
なり、基板冷Jill装置など特別な装置を必要としな
い。In order to form a thin film on the substrate 13 using this embodiment, metal vapor is ejected from the crucible 1 in the same manner as in the conventional method.
Since the surface position of 2 is small, the gold 1jjS %% and air ejected from the injection hole 3 of crucible 1 pass through the opening 22, but
Most of the radiant heat to the substrate 13 is blocked by the heat shield plate 21 of the iron, and the amount of heat reaching the substrate 13 is significantly less compared to conventional ones, so the influence of heat is small, and the substrate cooling device No special equipment is required.
以」二のように本発明に係る薄膜蒸着装置によ゛れば、
るつぼの噴射孔が形成された面の近傍に該噴射孔と対応
する部分に開口を有する熱シールド板を配設したので、
基板に到達するるつぼからの輻射熱量を大きく低減でき
、該輻射多1ハによる基板への悪影響を防止でき、基板
冷却装置を不要にできる効果がある。According to the thin film deposition apparatus according to the present invention as described below,
Since a heat shield plate having an opening in a portion corresponding to the injection hole is disposed near the surface of the crucible where the injection hole is formed,
The amount of radiant heat from the crucible reaching the substrate can be greatly reduced, the adverse effects of the radiant heat on the substrate can be prevented, and a substrate cooling device can be made unnecessary.
第1図は従来の薄膜蒸着装置の概略構成図、第2図は本
発明の一実施例による曹、股蒸ヱ「装置の概略構成図で
ある。
1・・・るつぼ、2・・・蒸着物質、3・・・噴射孔、
4・・・蒸気、13・・・基板、14・・・’AV膜、
21・・・熱シールド板、22・・・開1]。
なお図中同一符号は同−又は相当部分を示す。
代理人 大 岩 増 1.j(:
第1図
第2図FIG. 1 is a schematic diagram of a conventional thin film deposition apparatus, and FIG. 2 is a schematic diagram of a conventional thin film deposition apparatus. 1. Crucible, 2. Vapor deposition. Substance, 3... injection hole,
4... Steam, 13... Substrate, 14...'AV film,
21... Heat shield plate, 22... Open 1]. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Masu Oiwa 1. j(: Figure 1 Figure 2
Claims (1)
ぼを備え、上記るつぼからの蒸気を基板に衝突させて薄
膜を蒸着させる薄膜蒸着装置において、上記るつぼの噴
射孔が形成された面の近傍に該るつぼの噴射孔と対応す
る部分に開口を有する熱シールド板が配設されているこ
とを特徴とする薄膜蒸着装置。 (2) 上記熱シールド板は、複数段けられ”ζおり、
該各熱シールド板の開口は、るつぼと反対側に行くほど
径が大きい頂角30°の円錐形の外表面上に位置するも
のであることを特徴とする特許請求の範囲第1項記載の
薄膜蒸着装置。[Scope of Claims] (11) A thin film deposition apparatus comprising a crucible for spouting vapor of a deposition material to be deposited onto a substrate, and for depositing a thin film by colliding the vapor from the crucible with the substrate, wherein the injection hole of the crucible is A thin film deposition apparatus characterized in that a heat shield plate having an opening in a portion corresponding to the injection hole of the crucible is disposed near the formed surface. (2) The heat shield plate has a plurality of layers. There is "ζ",
Claim 1, wherein the opening of each heat shield plate is located on the outer surface of a cone with an apex angle of 30°, the diameter of which increases toward the side opposite to the crucible. Thin film deposition equipment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4076684A JPS60183721A (en) | 1984-03-01 | 1984-03-01 | Thin film evapolating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4076684A JPS60183721A (en) | 1984-03-01 | 1984-03-01 | Thin film evapolating apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60183721A true JPS60183721A (en) | 1985-09-19 |
Family
ID=12589745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4076684A Pending JPS60183721A (en) | 1984-03-01 | 1984-03-01 | Thin film evapolating apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60183721A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251116A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Molecular beam source for molecular beam crystal growth apparatus |
US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52123870A (en) * | 1976-04-12 | 1977-10-18 | Nippon Telegr & Teleph Corp <Ntt> | Thin semiconductor film producing apparatus |
JPS5372467A (en) * | 1976-12-08 | 1978-06-27 | Fujitsu Ltd | Manufacture for semiconductor device |
JPS5694731A (en) * | 1979-12-19 | 1981-07-31 | Philips Nv | Method of forming epitaxial layer and semiconductor device formed of semiconductor substrate for imparting same layer |
JPS5863130A (en) * | 1981-10-12 | 1983-04-14 | Nec Corp | Molecular beam generator |
-
1984
- 1984-03-01 JP JP4076684A patent/JPS60183721A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52123870A (en) * | 1976-04-12 | 1977-10-18 | Nippon Telegr & Teleph Corp <Ntt> | Thin semiconductor film producing apparatus |
JPS5372467A (en) * | 1976-12-08 | 1978-06-27 | Fujitsu Ltd | Manufacture for semiconductor device |
JPS5694731A (en) * | 1979-12-19 | 1981-07-31 | Philips Nv | Method of forming epitaxial layer and semiconductor device formed of semiconductor substrate for imparting same layer |
JPS5863130A (en) * | 1981-10-12 | 1983-04-14 | Nec Corp | Molecular beam generator |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251116A (en) * | 1985-04-30 | 1986-11-08 | Fujitsu Ltd | Molecular beam source for molecular beam crystal growth apparatus |
JPH0337296B2 (en) * | 1985-04-30 | 1991-06-05 | Fujitsu Ltd | |
US4982696A (en) * | 1988-01-08 | 1991-01-08 | Ricoh Company, Ltd. | Apparatus for forming thin film |
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