JPS62185875A - Apparatus for forming film in vapor phase - Google Patents

Abstract

PURPOSE:To prevent the heating of a substrate by electron bombardment and to protect the substrate by placing a magnet around the substrate so as to apply a magnetic field parallel to the substrate. CONSTITUTION:A magnet 7 is placed around a substrate 2. The magnet 7 applies a magnetic field B parallel to the surface 2a of the substrate 2 in the vicinity of the substrate 2. Free electrons e<->2 generated in a vacuum chamber 1 are trapped through lines S of magnetic force by force perpendicular to the forward direction of the electrons produced by electromagnetic induction.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to vapor phase film formation using vacuum evaporation, sputtering, ion blating, CVD, etc. It is related to the placement of

[Prior Art] For example, when forming a film on a substrate using an electron beam heating type vacuum evaporation apparatus, an electron beam is irradiated from an electron gun onto an evaporation material placed in a crucible to heat and evaporate it.
At the same time, a large amount of secondary electrons ejected from the evaporated material and backscattered electrons reflected on the surface of the evaporated material are generated, and these collide with the vapor particles of the evaporated material on the substrate surface.

However, the surface of the fabric used in IC and LSI processes is coated with a patterned resist in advance.
Most of these usually have a heat resistance temperature of about 120 degrees Celsius or lower, so they can be burned or deformed by heating due to the electron impact described above.Also, if the resist is of the electron beam exposure type, The target pattern will be destroyed due to exposure.

Such inconveniences such as substrate heating due to electron bombardment are also a common problem in vapor phase film forming apparatuses that form films from plasma using the substrate as an anode electrode.

[Problems to be Solved by the Invention] Therefore, as a measure to prevent such electron collision phenomenon and protect the substrate, in the example of the vacuum evaporation apparatus, a mesh electrode is interposed between the substrate and the evaporation source, 2 □ (Means have been attempted in which the free electrons moving toward the plate are electrically absorbed by the mesh electrode. However, in this method, the mesh electrode also shields the evaporated substance to be deposited on the substrate. This has the drawback that the deposition rate decreases, and the evaporated material adheres to the mesh electrode, causing the gap to gradually become clogged.

Focusing on these circumstances, the present invention has been developed to provide a device that can be widely used for substrates of vapor-phase film deposition apparatuses and can effectively prevent electron collision phenomena without causing problems such as a decrease in film deposition rate. The aim is to provide a new solution.

[Means for Solving the Problems] In order to achieve this object quickly, the present invention includes a magnet that applies a magnetic field parallel to the substrate surface near the substrate, around the substrate provided in the vapor phase film deposition apparatus. It is characterized by its placement.

[Function] If such a magnet is installed, when free electrons move from the space inside the chamber toward the substrate, a force perpendicular to the direction of movement will be applied to the electrons due to electromagnetic induction with the magnetic field parallel to the substrate surface. work,
The free electrons rotate around the lines of magnetic force and are deflected toward the periphery of the substrate, avoiding collisions with the substrate surface.

[Example] An illustrated embodiment will be described below.

The drawings show, as an example, the case where the present invention is applied to the above-mentioned electron beam type vacuum evaporation apparatus. Here, the basic internal configuration of the device is the same as that of the conventional device. That is, in the figure, 1 is a vacuum chamber whose interior is evacuated to a high vacuum region, 2 is a substrate set on a holder 3 in the chamber 1, and 4 is an electron beam evaporation source placed opposite the substrate 2 in the chamber 1. It is equipped with an electron gun crucible 5 charged with an evaporative substance M to be deposited on the plate 2, and an electron gun filament 6 which emits thermoelectrons (-secondary electrons) from the vicinity thereof.

In the vapor deposition apparatus having such a configuration, a pair of magnets 7.7 are disposed near the outer periphery of the substrate 2 and on the surface side thereof, one of which is an N pole and the other is an S pole. This magnet 7.7 shows its magnetic force ias.

A magnetic field B having a magnetic flux density parallel to the substrate surface 2a is applied in the chamber space near the substrate 2.

With the magnets 7.7 disposed around the substrate 2 in this manner, electron collisions with the substrate 2 can be effectively avoided for the following reasons.

As mentioned above, when the evaporation source 4 irradiates the primary electron e-l from the filament 6 to the evaporation material M in the crucible 5, the evaporation material M together with the evaporation particles m to be deposited on the substrate 2,
Many free electrons e-7 such as secondary electrons are generated within the chamber. Therefore, even if there are free electrons e-1 moving from the space inside the chamber 1 toward the substrate 2 in this state,
When it approaches the vicinity of the substrate 2 and reaches the field of action of the magnetic field B, a force perpendicular to the direction of movement of the free electron e-1 is applied to the free electron e-1 by electromagnetic induction. The electrons e-χ that are about to collide with the substrate 2 are guided by the lines of magnetic force S as shown in the figure. The card is then played while rotating around it.

Therefore, the amount of electrons colliding with the ζ plate surface 2a (from the space inside the chamber 1) can be significantly reduced, effectively solving problems such as substrate heating, baking of the resist formed on the surface, deformation and deterioration, etc. can do. In this case, since no effect is exerted on the evaporated particles m to be deposited on the substrate 2, they do not suffer from a low deposition rate r, and their maintenance is convenient and sufficient.

The magnets 7.7 used may be either electromagnets or permanent magnets, and they may be arranged 6 to be most effective according to the conditions such as the shape and size of the substrate 2. If magnets are used, the magnetic field B can be made uniform by making them move planetary relative to the substrate 2.

The above description has been made using a vacuum evaporation apparatus as an example, but the present invention is not limited to (
Other film forming apparatuses that use a gas phase reaction (e.g. sputtering, ion blating, plasma CVD, etc.) to deposit particles from plasma onto a plate as an anode electrode are also applicable. It can be widely used in preventing electron collisions with other objects, and provides similar effects.

[Effects of the Invention] As described above, the present invention provides a first r stage that accurately solves the problem of electron impact on the substrate in a vapor phase film forming apparatus by simply arranging magnets around the substrate. It was something that I was able to do.

[Brief explanation of drawings]

The drawing is a schematic diagram of a vacuum bonding apparatus showing an embodiment of the present invention. 1... Vacuum chamber 2... Substrate, 2a... Substrate surface 4... Evaporation source, M... Evaporation substance 7. 7... Magnet

Claims (1)

[Claims] A vapor phase film forming apparatus characterized in that a magnet is disposed around a substrate to apply a magnetic field parallel to the substrate surface in the vicinity of the substrate.