JPS6148566A - Electron beam vapor deposition device - Google Patents

Abstract

PURPOSE:To form a vapor deposition pattern with high accuracy on substrates provided with spattered resist films by providing an X-ray preventive plate which is rotatable and has a slit between said substrates and a vapor deposition source. CONSTITUTION:Plural pieces of substrates 12 for vapor deposition patterned with the resist film are disposed in the circumferential direction of asubstrate base 12 in an evacuated vessel 11. A crucible 15 into which the vapor deposition source 14 is packed to face the substrates 12 and an electron gun 16 which projects an electron beam to evaporate the source 14 are disposed and the vapor deposition is started by impressing a voltage between the crucible 15 and the gun 16 from a power source 17. An X-ray shielding plate 18 having the slit 19 provided between the base 13 and the source 14 is rotated in this stage and the X-rays generated from the source 14 are reflected as shown by dotted lines. The radiation of the X-rays to the substrates 12 is thus made slightly and the patterning of the vapor deposition with high accuracy on the substrates 12 is made possible.

Description

Detailed Description of the Invention [Field of Industrial Application] The present invention relates to an electron beam evaporation apparatus (hereinafter referred to as an EB evaporation apparatus) that is widely used in the manufacture of semiconductor devices, etc., and has recently been applied in the field of thin film applications. With the rapid expansion of evaporation, the materials for thin films that can be deposited have become more diverse.Especially when depositing materials with relatively high melting points, electron beam evaporation is often used. For the reason,
EB evaporation is used not only in the manufacturing process of semiconductor devices but also in many other fields.

In this EB evaporation apparatus, a substrate to be evaporated is placed in a vacuum-enabled container, and when the entire surface of the evaporation target substrate is to be evaporated, it is not coated with a resist film, but when a patterned evaporation surface is to be formed, A part of the surface of the substrate to be evaporated is covered with a patterned resist film), a evaporation source made of a high melting point material filled with evaporation material, and an electron emitting electrode that emits an electron beam to this evaporation source. When a voltage of several kilovolts is applied between the crucible and the electron emitting electrode, an electron beam is projected onto the deposition material filled in the crucible, and the energy of the electron beam melts and evaporates the deposition material. It will be deposited on the deposition substrate.

In this way, E'B evaporation has advantages such as the ability to adjust the amount of energy of the electron beam by adjusting the power supply voltage, making it easy to control the amount of evaporation, and making it possible to evaporate materials with high melting points. On the other hand, since the electron beam voltage is high, X-rays are generated from the evaporation source onto which the electron beam is projected.

When forming fine patterns of 1 μm or less in the manufacturing process of semiconductor devices, this X-ray is normally used to pattern by electron beam exposure using an electron beam resist film. When a substrate covered with a resist film for beam exposure is vapor-deposited by EB evaporation, the resist film for electron beam exposure on the surface of the substrate to be vapor-deposited is exposed to X-rays, and is patterned with high precision by the electron beam exposure. This method has the disadvantage that unexposed portions of the resist film are exposed to light, resulting in deterioration of the patterning accuracy of vapor deposition.

[Conventional technology]

With the trend toward higher integration in semiconductor devices, and in order to create semiconductor devices with excellent high-frequency characteristics, we are using electron beam exposure to pattern resist films to make the electrodes of semiconductor elements as precise as possible. An example of this is the formation of a gate electrode for a low-noise field effect transistor (FET).

When manufacturing this FET, a resist film is first deposited on a substrate, the resist film is patterned by electron beam exposure and development, and the substrate is placed in an EB evaporation device to perform evaporation.

FIG. 2 is a schematic diagram showing a cross section of a conventional electron beam evaporation apparatus. In a vacuumed container 1, there is a substrate stand 3 on which one or more substrates 2 to be evaporated are placed. Correspondingly, there is a crucible 5 for evaporating the evaporation source 4 and an electron gun 6 for projecting an electron beam onto the evaporation material filled in the crucible, and a beam voltage is applied to the crucible 5 and the electron gun by a power source 7. 6.

In this case, since a high-energy electron beam is projected onto the evaporation source 4, the evaporation source 4 emits an
The ray 8 is emitted inside the container, and this X
A line is projected.

In order to reduce the amount of X-rays generated, measures such as changing the deposition rate or increasing the distance between the deposition source and the substrate to be deposited have been taken, but the former takes longer time for the deposition process. In the latter case, the size of the vapor deposition apparatus is limited, and conventionally it has been impossible to completely prevent the effects of X-rays.

[Problem that the invention seeks to solve]

In the EB evaporation apparatus with the above configuration, since a high-voltage electron beam is projected onto the evaporation source, X-rays are naturally generated, and therefore it is impossible to prevent the generation of X-rays. By shielding the substrate to be deposited, which is sensitive to X-rays, from the X-rays, it is possible to significantly reduce the influence of the X-rays.

Therefore, as a method to solve this problem, a shielding plate is provided between the evaporation source and the substrate to be evaporated, a slit is formed in the shielding plate through which the deposit passes, and the shielding plate is rotated. , uniform vapor deposition is performed on each of a plurality of substrates to be vapor deposited arranged in a vapor deposition apparatus.

[Means for solving problems]

The present invention provides an evaporation apparatus that solves the above problems, and has a means for performing evaporation using an electron beam evaporation method on the surface of a substrate, a part of which is coated with an electron beam resist film. This can be achieved by providing an electron beam vapor deposition apparatus characterized in that a rotatable X-ray prevention plate having at least one or more slits is provided between the vapor deposition source and the substrate.

[Effect]

In other words, when the electron beam from the electron gun collides with the evaporation source at high voltage, it generates X-rays, and the X-rays expose the resist film on the substrate to be evaporated. A shielding plate is provided between a certain evaporation source and a substrate to be evaporated, a slit is provided on the shielding plate through which the evaporation material passes, taking into consideration the relative position of the evaporation source and the substrate to be evaporated, and a plurality of substrates to be evaporated are provided. The structure is such that the shield plate is rotated so that both can be vapor-deposited at the same time, thereby preventing damage from X-rays.

〔Example〕

FIG. 1 is a perspective view of the inside of the EB evaporation apparatus for explaining the EB evaporation apparatus of the present invention.
A plurality of substrates 12 to be evaporated are arranged in the circumferential direction of a substrate table 13, and there is an electron gun 16 corresponding to each substrate 12 to project an electron beam to evaporate the evaporation source I4. Then, a voltage is applied between the crucible 15 and the electron gun 16 by the power source 17.

A shielding plate 18 according to the present invention includes a substrate table 13 and a deposition source 1.
4, which is provided between the substrate 1 to be deposited and
A slit 19 having a dimension (solid arrow in the figure) through which the evaporated material from the evaporation source 14 can pass through is provided at a solid angle corresponding to the 20 dimension number, and this shielding plate is made to have a rotatable structure 20. Consideration is given so that the plurality of substrates 12 to be vapor-deposited are uniformly coated with vapor-deposited films.

By providing such a shielding plate 1B, the X-rays emitted from the deposition source are reflected by the shielding plate as shown by the dotted arrow, and the X-rays emitted to the substrate to be deposited are slightly transmitted through the slit 1.
Since the X-rays are only projected through X-rays 9, the influence of the X-rays on the resist film can be almost completely eliminated.

As for the actual operation of the EB evaporation equipment, 50% of high melting point metals such as titanium (Ti) and platinum (Pt) are applied to the substrate to be evaporated.
For example, in the case of vapor deposition to a thickness of 0.000, the crucible 15 is filled with these vapor-deposited metal materials, and the crucible 15 and the electron gun 1 are
6, the beam current becomes approximately 0.5 A, and this electric power melts and evaporates the deposited metal material filled in the crucible. At this time, the shielding plate 18 is By rotating at speeds p and m,
The deposited metal material passing through the slit in the shielding plate can be deposited on a plurality of substrates.

Moreover, the phenomenon of exposure of the resist film to X-rays can be almost completely prevented, and the accuracy of patterning of the vapor deposition surface can be greatly improved.

In this explanation, the case where the substrate to be deposited is fixed and the shielding plate is rotated is explained, but this is because rotating the shielding plate is mechanically easier; The same result can be obtained even if the shielding plate is fixed to the substrate and the substrate to be deposited is rotated.

〔Effect of the invention〕

As explained in detail above, by employing the EB evaporation apparatus of the present invention, extremely high-precision evaporation patterning becomes possible, which has the great effect of producing high-performance semiconductor devices. .

[Brief explanation of drawings]

FIG. 1 is a sectional view for explaining the vapor deposition apparatus of the present invention. FIG. 2 is a perspective view for explaining a conventional vapor deposition apparatus. In the figure, 11 is a vacuum container, 12 is a substrate to be deposited, 13 is a substrate stand, 14 is a deposition source 15 is a crucible,
Reference numeral 16 indicates an electronic gun 17, a power supply, 18 a shielding plate, 19 a slit, and 20 a rotating portion of the shielding plate. ] Fig. 2

Claims (1)

[Claims] When performing vapor deposition on the surface of a substrate coated with a patterned resist film in an electron beam evaporation device, the X-ray prevention device is rotatable and has at least one or more slits between the vapor deposition source and the substrate. An electron beam evaporation device characterized by being provided with a plate.