JPS60183719A - Thin film evaporating apparatus - Google Patents
Thin film evaporating apparatusInfo
- Publication number
- JPS60183719A JPS60183719A JP4076484A JP4076484A JPS60183719A JP S60183719 A JPS60183719 A JP S60183719A JP 4076484 A JP4076484 A JP 4076484A JP 4076484 A JP4076484 A JP 4076484A JP S60183719 A JPS60183719 A JP S60183719A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heat
- opening
- substrate
- heat insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、金属蒸気を基板に蒸着させる薄膜蒸着装置
の熱遮蔽に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a heat shield for a thin film deposition apparatus that deposits metal vapor onto a substrate.
従来の薄膜蒸着装置を第１図に示す。図において、１ば
基板１３に蒸着ずべき蒸着物質である金属２を内部に収
容するるつぼ、３は該るつぼ１の上面に形成された噴射
孔、４は上記るつぼ１の噴射孔３から噴射された金属蒸
気、５は上記るつぼ１を加熱するフィラメント、６は交
流電源、７は直流電源、８はグリッド、９は上記金属蒸
気４をイオン化するための熱電子を放出するイオン化フ
ィラメント、１０は交流電源、１１ば直流電源、１２は
上記イオン化された金属蒸気を加速する加速電極、１４
は上記基板１３の表面に蒸着形成された薄膜、１５は直
流電源、１６は上記るつぼ１からの輻射熱を遮蔽する熱
シールド板、１７は所定の真空度に保持された真空容器
である。A conventional thin film deposition apparatus is shown in FIG. In the figure, reference numeral 1 indicates a crucible containing therein metal 2, which is a vapor deposition material to be deposited on a substrate 13, reference numeral 3 indicates an injection hole formed on the upper surface of the crucible 1, and reference numeral 4 indicates a metal 2 that is injected from the injection hole 3 of the crucible 1. 5 is a filament that heats the crucible 1; 6 is an AC power source; 7 is a DC power source; 8 is a grid; 9 is an ionizing filament that emits thermoelectrons to ionize the metal vapor 4; 10 is an AC A power source, 11 is a DC power source, 12 is an accelerating electrode for accelerating the ionized metal vapor, 14
1 is a thin film deposited on the surface of the substrate 13; 15 is a DC power supply; 16 is a heat shield plate for shielding radiant heat from the crucible 1; and 17 is a vacuum container maintained at a predetermined degree of vacuum.
次に動作について説明する。Next, the operation will be explained.
第１図におい一ζ、フィラメント５は電源６によって加
熱され、電源７によってり−えられた電圧により電子を
るつぼ１に照射し、該るつぼ１ば該電子の１（１突を受
けて加熱される。これによりるつぼ１内の金Ｊ、ＬＡ２
は蒸発し、該金属蒸気は噴射孔３からｆ↓空中に噴射さ
れる。該噴射された金属蒸気４はイオン化フィラメンＩ
・９．電源１０．グリッド８によって発」ユされた熱電
子の衝突を受けてイオン化され、該イオン化された金属
蒸気４は加速型（伝１２と電源１５とによって加速され
、基板１３に射突して蒸着薄膜１４を作る。In FIG. 1, the filament 5 is heated by a power source 6, and the crucible 1 is irradiated with electrons by the voltage changed by the power source 7. As a result, gold J and LA2 in crucible 1
is evaporated, and the metal vapor is injected from the injection hole 3 into the air. The injected metal vapor 4 forms an ionized filament I
・9. Power supply 10. The ionized metal vapor 4 is ionized by the collision of thermoelectrons emitted by the grid 8, and the ionized metal vapor 4 is accelerated by the acceleration type (transfer 12) and the power source 15, and impinges on the substrate 13 to form the deposited thin film 14. make.
ところで、この薄膜蒸着装置においては、上記金属蒸気
４を発生・ｌしめる際、」二記るつぼ１は相当のｉ！ｌ
ｉ温になり、そのため）層剤熱が該るつぼ１の表面から
周囲に放出されることとなる。そこでこの従来装置では
、るつぼ１の側面及び底面の外方には上記輻射熱を反射
させる熱シールド板１６を配置しており、また上面にお
いては−に記加速電極■２を熱シールド板に共用してい
る。しかしこの加速電極１２はるつぼ１からかなり上方
に離れた位置にあるため金ｊＦｓ％ｇ気４ば該電極１２
部分を拡がって通ることとなり、そのための加速電極】
２には大きな開］コ部が形成されている。このためるつ
ぼ１の噴射孔３例の面からの輻射熱は、上記開口部を通
って基板１３に到達して該基板１３を加熱することにな
る。そこで従来の’ｆ（Ｉｌ＋Ｘｊ蒸着装置では、基板
の温度上昇を防止するためには基板１３を冷却する必要
があった。By the way, in this thin film deposition apparatus, when generating and cooling the metal vapor 4, the crucible 1 has a considerable i! l
temperature of the crucible 1, so that the heat of the layer agent is released from the surface of the crucible 1 to the surroundings. Therefore, in this conventional device, a heat shield plate 16 that reflects the radiant heat is arranged on the outside of the side and bottom surfaces of the crucible 1, and on the top surface, the accelerating electrode 2 described in - is also used as a heat shield plate. ing. However, since this accelerating electrode 12 is located quite far above the crucible 1, if the gold jFs%g gas is
The accelerating electrode is used for this purpose.
2 has a large open part formed therein. Therefore, the radiant heat from the surface of the three injection holes of the crucible 1 reaches the substrate 13 through the opening and heats the substrate 13. Therefore, in the conventional 'f(Il+Xj) vapor deposition apparatus, it was necessary to cool the substrate 13 in order to prevent the temperature of the substrate from rising.
本発明は、」二記のような従来のものの欠点をなくすた
めＱこなされたもので、るつぼの噴射孔からの金属蒸気
の噴出を妨げないような開口が形成された耐熱性の断熱
祠からなる断熱縁；（（内にるつぼを収容することによ
り、るつぼからの輻射熱が基１反にあまり届かないよう
にして基１反への多゛ハ影響を小さくできる薄膜蒸着装
置を提供することを目的としている。The present invention was developed in order to eliminate the drawbacks of the conventional ones as described in 2. The present invention is based on a heat-resistant heat-insulating shrine with an opening that does not prevent the ejection of metal vapor from the injection hole of the crucible. A heat insulating edge; The purpose is
以下、本発明の実施例を図について説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第２図は本発明の一実施例を示す。図におし１て、第１
図と同一符号は同−又は相当部分を示し、２１は耐熱性
の１１１′ｉ熱材からなる断熱容器で、該容器２１内に
はるつぼ１及びフィラメント５が収容されており、また
、該容器２１のるつぼｌのフィラメント５と対向する部
分を除いた面に対応する会１−分は該面に密着している
。２２は上記断熱容器２１の噴射孔３とり１応する部分
に設けられた開口であり、該開口２２は、頂角３０゛の
円錐台形状Ｇこなっており、そのるつぼ１倶撞１！１の
径は」二記噴月１孔３と同し径で、るつぼ１と反り１側
に行くほどその径は大きくなっＣいろ。FIG. 2 shows an embodiment of the invention. As shown in the figure, the first
The same reference numerals as those in the drawings indicate the same or corresponding parts, and 21 is a heat insulating container made of a heat-resistant 111′i heat material, and the crucible 1 and filament 5 are housed in the container 21. The portion corresponding to the surface of the crucible 21 excluding the portion facing the filament 5 is in close contact with the surface. Reference numeral 22 denotes an opening provided in a portion corresponding to the injection hole 3 of the heat insulating container 21, and the opening 22 has a truncated conical shape G with an apex angle of 30°, and the crucible 1 is 1! The diameter of the hole is the same as that of the second hole 1 and hole 3, and the diameter increases toward the crucible 1 and the warp 1 side.
次に作用効果について説明する。Next, the effects will be explained.
本実施例装置により基板１３に薄膜を蒸着形成するには
、従来と同様にるつぼ１から金属蒸気を噴出セしめる訳
であるが、本実施例では、上記断！ｊハ容器２１の開口
２２の面積は小さいため、るつぼ１の噴射孔３から噴出
する金属蒸気は開口２２を通るが、るつぼｌからの輻射
熱のほとんど番よこの断熱容器２１により遮断され、基
板１３！こ到達する４１をは従来のものと比較して非常
に少ｆ、ｃ ＜ 、ｆｊｔって熱の影響が小さくなり、
基板冷却装置など特別な装置を必要としない。In order to form a thin film on the substrate 13 by vapor deposition using the apparatus of this embodiment, metal vapor is ejected from the crucible 1 as in the conventional method, but in this embodiment, the above-mentioned method is used. Since the area of the opening 22 of the container 21 is small, metal vapor ejected from the injection hole 3 of the crucible 1 passes through the opening 22, but most of the radiant heat from the crucible 1 is blocked by the insulation container 21 on the side, and the substrate 13 ! 41 reached here is very small compared to the conventional one, f, c < , fjt, and the influence of heat is small.
No special equipment such as a substrate cooling device is required.
以上のように本発明に係る薄膜蒸着装置によれば、るつ
ぼを耐熱性の断対喜Ａからなる断熱容器内に収容したの
で、基板に到達するるつぼからの輻射熱量を大きく低減
でき、該輻射熱による基板への悪影響を防止でき、基板
冷却装置を不要にできるｕノ果がある。As described above, according to the thin film deposition apparatus according to the present invention, since the crucible is housed in the heat-insulating container made of heat-resistant insulation material A, the amount of radiant heat from the crucible reaching the substrate can be greatly reduced. There is an advantage that it is possible to prevent the adverse effects on the substrate caused by the oxidation and eliminate the need for a substrate cooling device.
【図面の簡単な説明】
第１図は従来のｆｉ：膜蒸着装置の概略構成図、第２図
は本発明の一実施例によるＹａ膜蒸着装置の楯ｍ６構成
図である。
１・・・るつぼ、２・・・蒸着物質、３・・・噴射孔、
４・・・蒸気、５・・・フィラメント、１３・・・基板
、１４・・・薄膜、２１・・・断熱容器、２２・・・開
口。
なお図中同一符号は同−又は相当部分を示す。
代理人 大 岩 増 雄
第１図
第２図
１BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic configuration diagram of a conventional fi: film deposition apparatus, and FIG. 2 is a shield m6 configuration diagram of a Ya film deposition apparatus according to an embodiment of the present invention. 1... Crucible, 2... Vapor deposition material, 3... Injection hole,
4... Steam, 5... Filament, 13... Substrate, 14... Thin film, 21... Heat insulating container, 22... Opening. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2 Figure 1
Claims (3)
、該るつぼを加熱するフィラメントとを備え、上記るつ
ぼからの蒸気を基板に衝突させて薄膜を蒸着させる薄膜
蒸着装置において、上記るつぼは該るつぼの噴射孔と対
応する部分に開口を有する耐熱性の断熱材からなる断熱
容器内に収容されていることを特徴とするＨ 膜蒸着装
置。(1) A thin film deposition apparatus comprising a crucible containing a deposition substance to be deposited on a substrate and a filament for heating the crucible, and depositing a thin film by colliding vapor from the crucible with the substrate, in which the crucible is An H 2 film deposition apparatus, characterized in that the apparatus is housed in a heat insulating container made of a heat-resistant heat insulating material and having an opening in a portion corresponding to the injection hole of the crucible.
るものであることを特徴とする特許請求の範囲第１項記
載の薄膜蒸着装置。(2) The thin film deposition apparatus according to claim 1, wherein the heat insulating container also accommodates the filament.
射孔が設けられた面に対応する部分は該面に密着してお
り、上記開口は、そのるつぼ側端の径が上記噴射孔と同
し径でるつぼと反対側に行くほど径が大きくなる頂角３
０°の円錐台形状を有するものであることを特徴とする
特許請求の範囲第１項又は第２項記載のＭ膜蒸着装置。(3) At least a portion of the heat insulating container that corresponds to the surface of the crucible on which the injection hole is provided is in close contact with the surface, and the opening has the same diameter at the crucible side end as the injection hole. Apex angle 3 where the diameter increases as it goes to the opposite side of the crucible
The M film deposition apparatus according to claim 1 or 2, wherein the M film deposition apparatus has a truncated cone shape of 0°.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4076484A JPS60183719A (en) | 1984-03-01 | 1984-03-01 | Thin film evaporating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4076484A JPS60183719A (en) | 1984-03-01 | 1984-03-01 | Thin film evaporating apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60183719A true JPS60183719A (en) | 1985-09-19 |
Family
ID=12589686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4076484A Pending JPS60183719A (en) | 1984-03-01 | 1984-03-01 | Thin film evaporating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60183719A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070811A (en) * | 1988-09-27 | 1991-12-10 | Albert Feuerstein | Apparatus for applying dielectric or metallic materials |
-
1984
- 1984-03-01 JP JP4076484A patent/JPS60183719A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070811A (en) * | 1988-09-27 | 1991-12-10 | Albert Feuerstein | Apparatus for applying dielectric or metallic materials |
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