JPS61270815A - Thin film formation equipment - Google Patents

Abstract

PURPOSE:To form a uniform film on all the surface of a substrate ionizing metal vapor which passes near the side wall of a funnel and improving the efficiency of evaporation by providing the second ionizing filament inside the funnel at the top of a crucible. CONSTITUTION:An evaporation material 2 housed in a crucible 1 in the vacuum container 18 of a thin film formation equipment is heated by a bombardment filament 5 and the generated vapor of the material 2 is ejected from an exhaust port 3. The generated vapor is ionized by the first ionizing filament 9. The second ionizing filament 20 is also provided inside the funnel at the top of the exhaust port 3 of the crucible 1 and the vapor passing near the side wall of the funnel is ionized. The metal vapor in the orbit 4 of the ionized metal vapor and the metal vapor in the orbit 4a of not ionized metal vapor are projected on a substrate 15 and an evaporation film 16 is formed. The efficiency of evaporation is also improved and the uniform evaporation film 16 is formed on the substrate 15.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor ejecting device for a thin film forming apparatus for depositing metal vapor onto a substrate.

[Conventional technology]

FIG. 2 is a sectional view showing a conventional thin film forming apparatus. In the figure, (1) a crucible, (2) a vapor deposited material in the crucible A, and (3) a spout provided in the crucible (1). hole, (4) is the trajectory of ionized metal vapor, (4a) is the trajectory of non-ionized metal vapor, (5) is the bombarded filament for heating the crucible (1), and (6) is the heating of the filament (5). (7) is a bombarded power source, (8) is a grid, (9) is a first ionizing filament that emits electrons to ionize metal vapor, αQ is a power source for heating the ionizing filament (9), ( b) is an ionization power source, (b) is an ion accelerating electrode, (to) is a support plate for the grid (8), α4 is an ion acceleration power source, (to) is a substrate, αQ is a deposited film, αη is a heat shield plate , - Light is a vacuum vessel, and α9 is an equipotential line formed between the ion velocity electrode (2), the grid support plate (to), and the grid (8).Next, the operation will be described.

The filament (5) is heated by a heating power source (6) and emits thermoelectrons by a bombarded power source (7). The thermionic electrons hit the crucible (1) and heat the crucible (1).

As a result, the vapor deposited substance (2) in the crucible (1) generates steam, which is ejected from the ejection hole (3). The ionized metal vapor collides with electrons and is ionized. The ionized metal vapor is in the electric field formed between the ion accelerating electrode (6), the grid support plate (to), and the grid (8), and is approximately aligned with the equipotential line α9. Accelerated in the orthogonal direction, the non-ionized metal vapor is ejected from the crucible (1) and hits the substrate (lE;) with the energy;
It collides with the substrate (4) and forms a thin film on the substrate (4).

[Problem that the invention seeks to solve]

Conventional thin film forming equipment is configured as described above.
Of the metal vapor ejected from the crucible, the metal vapor moving near the side of the chimney of the crucible is unlikely to be ionized, and the non-ionized metal travels straight without being affected by electric force, so it does not reach the substrate. Therefore, there is a problem that a part of the vapor does not contribute to the formation of a thin film.

This invention was made to solve the above problems, and an object thereof is to provide a thin film forming apparatus with high vapor deposition efficiency.

[Means for solving problems]

The thin film forming apparatus according to the present invention includes a second ionization filament also provided inside the chimney above the crucible.

[For production]

In the second aspect of the present invention, the metal vapor passing near the side surface of the chimney at the top of the crucible is also ionized by the second ionization filament inside the chimney, and more ionized vapor is obtained, so that the vapor deposition efficiency can be increased. Since more ionized metallic fish particles can be introduced into the accelerating electric field from a wide #P degree range, a uniform film over a wide range can be obtained.

〔Example〕

An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows a thin film forming apparatus according to an embodiment of the present invention, and in the figure, the same reference numerals as in figure 's2 indicate the same parts. (2) An ionizing filament installed inside the chimney at the top of the crucible to ionize metal vapor; Ω1 is a power source for heating the filament (1).

Next, the operation will be explained.

When the crucible +1) is heated by the filament (5) as in the conventional apparatus, the vapor deposited substance (2) in the crucible mouth) generates steam, which is ejected from the jet hole (3). In the thin film forming apparatus according to this embodiment, the second ionizing filament is provided inside the chimney of the crucible, so the steam passing near the side of the chimney is also ionized.
This increases the amount of vapor that is ionized. The vapor ionized by the second ionized filament enters the accelerating electric field from a wide angular range near the side of the chimney of the crucible, drawing a larger arc than before, and converging in the accelerating field. to reach the substrate (g) over a wide angular range. As a result, a uniform thin film can be obtained over the entire substrate (2). Moreover, in times of crisis,
Since the amount of ionized vapor is large, the vapor deposition efficiency is also increased.

〔Effect of the invention〕

As described above, according to the thin film forming apparatus according to the present invention,
An ionizing filament is provided inside the chimney to ionize the metal vapor passing near the side of the chimney at the top of the crucible, which improves vapor deposition efficiency and allows a uniform film to be obtained over the entire substrate.

[Brief explanation of drawings]

FIG. 1 is a sectional side view showing a thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional side view showing a conventional thin film forming apparatus. 4a... One orbit of metal vapor that is not ionized, 5...
・Bombarded filament, 6... Heating power supply, 7.
...Bombarding power supply, 8...Grid, 9...First ionization filament, 10...Heating power supply, 1
1... Ionization power supply, 12... 1-on acceleration electrode, °
13... Grid support plate, 14... Power source for ion acceleration, 15... Substrate, 16... Vapor deposited film, 17... Heat shield plate, 18... Vacuum container, 19... etc. Potential line, 20...Second ionized filament, 21°
Power supply for calo heat 0 Note that the same reference numerals in the drawings indicate the same or equivalent parts.

Claims (1)

[Claims] (1) A vacuum chamber that maintains a predetermined degree of vacuum, a crucible provided in the vacuum chamber and having a chimney for accommodating a vapor deposition material, a bombarded filament for generating steam in the vapor deposition material, and a generator. a first ionizing filament for ionizing the vapor, a second ionizing filament provided inside the chimney for ionizing the vapor passing near the side of the chimney above the crucible; 1. A thin film forming apparatus comprising an electric field accelerating means for colliding ionized metal vapor with non-ionized metal vapor against a substrate to form a thin film.