JPS5579870A - Evaporation apparatus for substance in vacuum - Google Patents

Evaporation apparatus for substance in vacuum

Info

Publication number
JPS5579870A
JPS5579870A JP15468878A JP15468878A JPS5579870A JP S5579870 A JPS5579870 A JP S5579870A JP 15468878 A JP15468878 A JP 15468878A JP 15468878 A JP15468878 A JP 15468878A JP S5579870 A JPS5579870 A JP S5579870A
Authority
JP
Japan
Prior art keywords
electrode
filament
ion
electron
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15468878A
Other languages
Japanese (ja)
Other versions
JPS5614746B2 (en
Inventor
Yasushi Kawashita
Masami Nakasone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Seiki Co Ltd
Original Assignee
Shinko Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Seiki Co Ltd filed Critical Shinko Seiki Co Ltd
Priority to JP15468878A priority Critical patent/JPS5579870A/en
Publication of JPS5579870A publication Critical patent/JPS5579870A/en
Publication of JPS5614746B2 publication Critical patent/JPS5614746B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To prevent the generation of abnormal discharge and to evaporate the evaporation material at a constant speed, by providing the ion trap converging and catching ion beam in the beam-form generated in the neighborhood of flowing space of electron beam nearby electron gun of evaporation apparatus. CONSTITUTION:Electron discharged from the filament 2, is converged in the evaporation material 8 in the beam-form and is run against the material 8 and then, the material 8 is evaporated by heating. The first electrode 12 provided in front and composing ion trap, is kept at earth electric potential and nearly the same voltage to that of the filament 2, is applied on the second electrode provided in the rear of the filament 2. Evaporated particle ionized positive ion or postive by an electrostatic lens action by an electric field formed by the earth electric potential of the electrode 12 and high voltage of the electrode 14, is trapped and is removed by the electrode 14 shown as dotted line. Hereby, reactive substance of desired ratio is made in a constant reaction gas.
JP15468878A 1978-12-14 1978-12-14 Evaporation apparatus for substance in vacuum Granted JPS5579870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15468878A JPS5579870A (en) 1978-12-14 1978-12-14 Evaporation apparatus for substance in vacuum

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15468878A JPS5579870A (en) 1978-12-14 1978-12-14 Evaporation apparatus for substance in vacuum

Publications (2)

Publication Number Publication Date
JPS5579870A true JPS5579870A (en) 1980-06-16
JPS5614746B2 JPS5614746B2 (en) 1981-04-06

Family

ID=15589745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15468878A Granted JPS5579870A (en) 1978-12-14 1978-12-14 Evaporation apparatus for substance in vacuum

Country Status (1)

Country Link
JP (1) JPS5579870A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004192903A (en) * 2002-12-10 2004-07-08 Prazmatec:Kk Electron gun

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62132814U (en) * 1986-02-17 1987-08-21

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140065U (en) * 1978-03-23 1979-09-28
JPS54140064U (en) * 1978-03-23 1979-09-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54140065U (en) * 1978-03-23 1979-09-28
JPS54140064U (en) * 1978-03-23 1979-09-28

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004192903A (en) * 2002-12-10 2004-07-08 Prazmatec:Kk Electron gun

Also Published As

Publication number Publication date
JPS5614746B2 (en) 1981-04-06

Similar Documents

Publication Publication Date Title
US4381453A (en) System and method for deflecting and focusing a broad ion beam
US4541890A (en) Hall ion generator for working surfaces with a low energy high intensity ion beam
US4471224A (en) Apparatus and method for generating high current negative ions
JPS63308854A (en) Ion source device
Probyn A low-energy ion source for the deposition of chromium
Franks FAB: the fast atomic beam source
JPH0456761A (en) Thin film forming device
JPS5579870A (en) Evaporation apparatus for substance in vacuum
US4939425A (en) Four-electrode ion source
JPS54124879A (en) Ion beam deposition
US3514666A (en) Charged particle generator yielding a mono-energetic ion beam
RU2096856C1 (en) Ion beam formation method and device intended for its realization
JPH09256148A (en) Ion plating device
JPS6347226B2 (en)
GB1410262A (en) Field optical systems
US3525013A (en) Metallic ion source including plurality of electron guns
SU300079A1 (en) Vacuum Coater
EP0095879B1 (en) Apparatus and method for working surfaces with a low energy high intensity ion beam
RU1802551C (en) Ion-ray coating method
JP3247159B2 (en) Electron beam evaporation system
JPS5868856A (en) Ion source
JPS5871549A (en) Ion source
JPS616271A (en) Method and device for bias ion plating
JPH0680185B2 (en) Film making equipment
JPS5871548A (en) Ion source