GB1410262A - Field optical systems - Google Patents

Field optical systems

Info

Publication number
GB1410262A
GB1410262A GB734673A GB734673A GB1410262A GB 1410262 A GB1410262 A GB 1410262A GB 734673 A GB734673 A GB 734673A GB 734673 A GB734673 A GB 734673A GB 1410262 A GB1410262 A GB 1410262A
Authority
GB
United Kingdom
Prior art keywords
tip
electrode
ion
prevents
emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB734673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Optical Corp
Original Assignee
American Optical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Optical Corp filed Critical American Optical Corp
Publication of GB1410262A publication Critical patent/GB1410262A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
    • H01J3/02Electron guns
    • H01J3/021Electron guns using a field emission, photo emission, or secondary emission electron source
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/073Electron guns using field emission, photo emission, or secondary emission electron sources

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

1410262 Electron guns; ion beam apparatus; ion pumps AMERICAN OPTICAL CORP 14 Feb 1973 [14 Feb 1972] 7346/73 Heading H1D Field emission apparatus comprises field emission tip 21, electrode system 23, 24 producing focusing and accelerating fields and field electrode 22 for extracting charged particles, the field electrode including two spaced apertures (e.g. in electrodes (35), (32) of Fig. 2, not shown), the proximal aperture exposed directly to the unfocused emission from the tip and being large enough to prevent any substantial proportion of the beam striking the proximal face of the field electrode, the distal aperture limiting the beam to the desired diameter. The gun may be in a scanning microscope and may produce negative or positive particles (e.g. electrons or ions). An ionizable gas is introduced from ion production. Electric potentials, aperture sizes, distances and spot sizes are disclosed, for example in relation to tip size. V 1 /V 0 Determines focal distance while impedance Z prevents the extraction voltage rising to the main accelerating voltage. Ve may be controlled independently of V 1 to produce focal length control as well as beam size. Annular shield 20 prevents h.v. discharges and condenses Ti sublimated from coil 19 so constituting a vacuum pump, and in conjunction with inherent ion pumping provides by electrodes 21 and 22, i.e. ionization by primary and secondary particles, attains a 10<SP>-9</SP> to 10<SP>-11</SP> torr vacuum. Coil 19 is on a depending flange which prevents Ti coating the tip, apertures or insulators. Deflection lens 16 synchronized to a scanning system for control of video receiver enables programmed operation. Detection may be by transmitted, secondary, reflected or absorbed electrons, photons, or X-rays. Electrode 23, 24 geometries are discussed, tip 21 is on insulator (26) which may be axially adjustable (e.g. by the mechanism as in patent Specification 1,355,365), extractor electrode (35), (32) has open-side walls permitting ionized particle and contaminant passage. Raised portions about the apertures trap contaminants, and insulator (31) improves h.v. protection. Regions (41a), (41b) are at different vacuum levels and differentially pumped. Open structure shield (33) reduces ion bombardment of tip 21, ions being ultimately trapped on shield 20. Coating the tip with Zr or other high work function material or altering the tip geometry ensures emission from a smaller source. Magnetic and/or mechanical and/or electrostatic trapping may be used as well as sublimation methods to inhibit tip damage.
GB734673A 1972-02-14 1973-02-14 Field optical systems Expired GB1410262A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22597072A 1972-02-14 1972-02-14

Publications (1)

Publication Number Publication Date
GB1410262A true GB1410262A (en) 1975-10-15

Family

ID=22847020

Family Applications (1)

Application Number Title Priority Date Filing Date
GB734673A Expired GB1410262A (en) 1972-02-14 1973-02-14 Field optical systems

Country Status (10)

Country Link
JP (1) JPS576225B2 (en)
AU (1) AU470515B2 (en)
CA (1) CA976594A (en)
DD (1) DD103095A5 (en)
DE (1) DE2304906C2 (en)
FR (1) FR2172251B1 (en)
GB (1) GB1410262A (en)
IT (1) IT977180B (en)
NL (1) NL175676C (en)
SE (1) SE380673B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306871A2 (en) * 2001-10-25 2003-05-02 Northrop Grumman Corporation Apparatus and method for focusing high-density electron beam emitted from planar cold cathode electron emitter

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5425792B2 (en) * 1973-04-16 1979-08-30
JPS5023571A (en) * 1973-06-29 1975-03-13
JPS60192947A (en) * 1984-03-13 1985-10-01 Mitsubishi Electric Corp Photomask material for fabricating semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3678333A (en) * 1970-06-15 1972-07-18 American Optical Corp Field emission electron gun utilizing means for protecting the field emission tip from high voltage discharges

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1306871A2 (en) * 2001-10-25 2003-05-02 Northrop Grumman Corporation Apparatus and method for focusing high-density electron beam emitted from planar cold cathode electron emitter
EP1306871A3 (en) * 2001-10-25 2004-04-21 Northrop Grumman Corporation Apparatus and method for focusing high-density electron beam emitted from planar cold cathode electron emitter

Also Published As

Publication number Publication date
NL7301491A (en) 1973-08-16
CA976594A (en) 1975-10-21
JPS576225B2 (en) 1982-02-03
DD103095A5 (en) 1974-01-05
AU470515B2 (en) 1976-03-18
NL175676C (en) 1984-12-03
FR2172251A1 (en) 1973-09-28
AU5167373A (en) 1974-08-01
DE2304906C2 (en) 1985-10-24
NL175676B (en) 1984-07-02
IT977180B (en) 1974-09-10
JPS4948273A (en) 1974-05-10
FR2172251B1 (en) 1978-05-26
DE2304906A1 (en) 1973-08-23
SE380673B (en) 1975-11-10

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19930212