JPH02104661A - Thin film forming device - Google Patents

Abstract

PURPOSE:To form a good-flatness thin film on the rugged surface of a substrate by vapor-depositing a vapor-deposition material, which has been vaporized, ionized, and accelerated by an electric field, on the substrate, and irradiating the substrate with the accelerated gas ion from a gas ion source. CONSTITUTION:The vapor-deposition material 2 in a crucible 1 is heated and vaporized by a filament 5, and injected from a nozzle 3. The vapor 4 is drawn out by a grid electrode 12 having a grid 9, and ionized by an ionization filament 8. The ion is accelerated by an accelerating electrode 13, and allowed to collide with the substrate 14 to form a film on the surface. In the film forming device, the vapor-deposited film 15 on the substrate 14 is obliquely irradiated with the gas ion 20 of an inert gas from the gas ion source 19. The top of the protrusion of the vapor-deposited film 15 is sputtered by the gas ion 20, and the film is deposited in the recess. As a result, the ruggedness on the film 15 is flattened.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film forming apparatus for forming a thin film on a substrate.

[Prior Art] FIG. 3 shows a conventional thin film forming apparatus disclosed in, for example, Japanese Patent Publication No. 54-9592.
A nozzle (3) through which the molten substance is evaporated and ejected is provided on the upper part of the crucible (1) containing the substance (2). Part of the steam (4) ejected from this nozzle (3) is clustered. A current from an AC type # (6) is passed through the filament (5) that heats the crucible (1) by electron bombardment to raise the temperature to emit thermoelectrons. The first DC power source (7) is connected to the crucible (1) so that the electrons emitted by the filament (5) collide with the crucible (1).
A bias voltage is applied to the filament (5) so that its potential is more positive than the potential of the filament (5). The ionizing filament (8) emits electrons for ionizing a portion of the deposited material to a positive charge by electron bombardment. Grid (9)
accelerates the thermoelectrons emitted from the ionized filament (8) and causes them to collide with the vapor deposited material ejected from the crucible (1). The AC power source (10) causes the ionized filament (8) to generate heat. The second DC power supply (11) is for keeping the ionizing filament (8) at a negative potential with respect to the grid (9). (12) is a grid electrode. The accelerating electrode (13) is an ionized vapor deposition material (
4) Accelerate. (I4) is a substrate, on the surface of which a vapor deposited film (15) is formed. The third DC power source (16) applies a negative potential to the accelerating electrode (13) with respect to the grid electrode (12). The heat shield plate (17) has a filament (5
) is kept at the same potential as the crucible (1), which is heat shielded.

(18) is a vacuum chamber.

With the above configuration, the filament (5) is connected to AC current # (
6) and emits thermoelectrons, but due to the positive voltage applied to the crucible (1) by the first DC power supply (7), the thermoelectrons collide with the crucible (1) and heat the crucible (1). do. Then, the vapor deposition substance (2) in the crucible (1) evaporates, and this vapor is ejected into a vacuum from the nozzle (3). The ejected steam (4) collides with electrons that have jumped out from the filament (8) and are drawn out to the grid (9), and the electrons are knocked out and become positively charged ions. These positive ions are accelerated by the accelerating electrode (13) and deposited on the substrate (14), forming a deposited film (15).

[Problems to be Solved by the Invention] Since the conventional thin film forming apparatus is configured as described above, when forming a thin film on a substrate having an uneven surface, the wall surface in the normal direction to the substrate surface is had the problem that a thin film was not formed.

This invention was made to solve the above-mentioned problems, and aims to provide a thin film forming apparatus that can form a flat thin film even on a substrate having an uneven surface. .

[Means for Solving the Problems] A thin film forming apparatus according to the present invention includes a conventional thin film forming apparatus equipped with a gas ion generation source that ionizes an inert gas, accelerates it with an electric field, and irradiates the ion onto a substrate.

[Function] In this invention, by irradiating energetic gas ions from a gas ion source, the film formed on the protruding portions on the substrate surface is completely destroyed! At the same time, sputtered thin film atoms are deposited on the recessed areas.

[Example] FIG. 1 shows an example of the present invention, and in the figure, (1
9) is a gas ion source of inert gas, and this gas ion t
Gas ions (20) are released from A (19).

(21) is a substrate rotation device. Gas ion source (19)
may be either a thermal filament type or a microwave type, and the means for ionization can be selected as appropriate.

The rest of the structure is the same as that in FIG. 3, and the explanation will be omitted.

Next, the operation will be explained. First, the vapor deposition film (15) is deposited on the substrate (14) using the vapor (4) of the vapor deposition material (2) in the same manner as described for the conventional apparatus.

When the film has been deposited to a certain thickness, the substrate (14) is irradiated with inert gas ions (20) from the gas ion source (19) with optimal energy. In addition, the thin film formed in this manner, in which the substrate (14) is rotated by the evaporation rotation device (21), will be compared with that formed by a conventional device. FIG. 2(a) shows a cross-sectional view of a film deposited on an uneven substrate (14) using a conventional apparatus, and the vapor deposition material is not deposited on the wall surface (14a) of the recessed part of the substrate (14). Step coverage is poor.

FIG. 2(b) shows the above embodiment, in which gas ions (20) incident obliquely from a gas ion source (19) sputter the vapor deposited material (22) on the vapor deposition surface.

The bottom of the recess is shallow because the sputtered vapor deposition material is deposited on the side walls and the bottom of the recess of the substrate (14).
The protrusion of the convex portion becomes lower, and the flatness of the substrate surface improves.

[Effect of the invention 1 As described above, according to the present invention, a gas ion generation source is attached to irradiate the substrate being deposited with energetic gas ions, so that a thin film can be formed on the uneven surface of the substrate. Even if it is formed, a flat surface can be obtained.

[Brief explanation of drawings]

FIG. 1 is a side sectional view of a main part of an embodiment of the present invention, FIG. 2 is a partial sectional view comparing the effects of the embodiment, and FIG. 3 is a side sectional view of a conventional thin film forming apparatus. . (1) crucible, (2) vapor deposition material, (3) nozzle,
(5) is filament, (8) is ionization filament, (9) is grid, (12) is grid electrode, (13
) are accelerating electrodes, and what is made up of these is an ion source. Further, (19) is a gas ion source. In each figure, the same reference numerals indicate the same or corresponding parts. 20' T Sui Fuichiyu 2 figure (Q) (b) Ougi 3 figure 7: I-tane power supply 10・Karara Electric Power Station 11: t [condition power supply

Claims (1)

[Claims] An ion source that evaporates and ionizes a vapor deposition material that forms a thin film, and further accelerates the ions with an electric field, and a gas ion source that ionizes an inert gas and accelerates the ions with an electric field. A thin film forming apparatus for forming the thin film on.