JPH09263933A - Mechanism of crucible part in vapor deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a mechanism of crucible part in a vapor deposition device to be able to make active a plasma gun intermittently. SOLUTION: In a vapor deposition device 1 vaporizing an evaporating material J consisting of an insulating material within the crucible 6 with a plasma beam 1 and forming a film on the substrate S, a prevention plate 9 against the deposition is provided in proximity, wherein an opening 9a of edge outside contour is equipped upward from mobile electrodes 8, 8, together with providing the mobile electrodes 8, 8 enabled reciprocation upward to edge 6a of the crucible 6 and the outward, above the crucible 6.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a crucible mechanism in a vapor deposition apparatus.

[0002]

2. Description of the Related Art
As shown in FIG. 2, as a thin film forming apparatus, a plasma beam P generated from a plasma gun 3 such as a pressure gradient type plasma gun is converged on a crucible 6, an evaporation material J in the crucible 6 is evaporated, and a thin film is formed on a substrate S. An evaporation apparatus 20 to be formed is used. In the vapor deposition apparatus 20, when the evaporation material J is deposited on the substrate S, the evaporation material J is also applied to the edge 6a of the crucible 6.
Is deposited. Therefore, when the evaporation material J is an insulator material, the insulator is deposited on the upper surface of the crucible 6 and the crucible 6
Loses the function as an electrode for drawing in the plasma beam P. That is, once the plasma gun 3 is stopped, it cannot be started up again, and intermittent process operation may not be performed. Therefore, in the vapor deposition apparatus 20, when the pressure inside the vacuum chamber 2 is restored and the substrate S is replaced, the deposited insulator must be removed from the edge 6a of the crucible 6, and the production efficiency is extremely poor. Was.

As a vapor deposition device for preventing an insulating film from being formed on the edge 6a of the crucible 6, a vapor deposition device 30 shown in FIG.
There is. The vapor deposition device 30 is provided with a pair of deposition-preventing plates 31 having a notch covering the upper surface of the edge 6 a of the crucible 6 above the crucible 6 so that the pair of deposition preventing plates 31, 31 can be moved in the horizontal direction with the notches facing each other. When the plasma gun 3 is started, the edge portions 6a of the crucible 6 that move the deposition-proof plates 31, 31 outwardly are exposed, and the crucible 6 functions as an electrode. When the plasma beam P converges on the evaporating material J and the evaporating material J is heated, the energization of the plasma beam is ensured on the surface of the evaporating material J and the evaporation material J starts to evaporate. Is moved to its original state, and covers the upper surface of the edge 6a of the crucible 6 to prevent the evaporation material J from being deposited on the edge 6a of the crucible 6. Further, as shown in FIG. 4, an evaporation device 40 in which an electrode 8 is arranged near the crucible 6 and a movable adhesion-preventing plate 41 that covers the electrode 8 is also considered.

However, in the vapor deposition device 30, the deposition-preventing plates 31, 31 cannot sufficiently cover the upper surface of the edge 6a of the crucible 6, and the vapor deposition of the evaporation material J on the edge 6a of the crucible 6 is completely stopped. Since the discharge cannot be prevented, there is a problem that the discharge when starting the plasma gun 3 becomes unstable. Further, in the vapor deposition device 40 provided with the movable deposition-inhibitory plate 41, it is necessary to take heat-proof measures against the deposition-inhibitory plate and it is impossible to completely prevent vapor deposition of the evaporation material J on the edge portion 6a of the crucible 6. , Have similar problems.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a crucible mechanism in a vapor deposition apparatus capable of activating a plasma gun for a long period of time, requiring very little maintenance even if the vapor deposition material is insulative.

[0006]

In order to achieve the above object, a crucible mechanism in a vapor deposition apparatus according to the present invention comprises a vapor deposition method for evaporating an evaporation material made of an insulating material in a crucible by a plasma beam to form a film on a substrate. In the apparatus, an electrode is provided above the crucible so as to be able to reciprocate above and outside the edge of the crucible, and a deposition-preventing plate having an opening outside the crucible edge above the electrode is provided near the crucible. It is provided.

[0007]

Embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1 shows a vapor deposition apparatus 1 according to the present invention. The vapor deposition apparatus 1 includes a pressure gradient type large current low voltage plasma gun 3 and a plasma beam focusing coil 4 attached to a side wall of a vacuum chamber 2, and a vacuum chamber 2. A permanent magnet 5 for deflecting and converging the plasma beam, which is arranged on the inner bottom surface, a crucible 6 and a crucible unit mechanism 7 which are arranged above the permanent magnet 5.

The crucible mechanism 7 includes a pair of movable electrodes 8, 8 having an inner edge having the same shape as the inner edge 6a of the crucible 6 above the crucible 6, and an upper part of the movable electrodes 8, 8 The crucible 6 has an edge 6a and a deposition-preventing plate 9 having an outer edge-shaped opening 9a. The movable electrodes 8, 8 are provided so as to be able to reciprocate in the horizontal direction so as to cover a position above the edge 6a of the crucible 6 along a rail (not shown) and to expose above the edge 6a. The moving electrodes 8 have a water-cooled structure.

The plasma gun 3 is connected to a minus side 10a of a plasma gun power supply 10, and the crucible 6 and the moving electrodes 8, 8 are connected to the plus side 10b of the power supply.
And the ground 11 are connected.

In order to perform a vapor deposition process with the vapor deposition apparatus 1 having the above structure, the crucible 6 containing the evaporation material J made of an insulating material is placed in the vacuum chamber 2 and a holder (shown in FIG. After the substrate S is mounted on the vacuum chamber 2 and the vacuum chamber 2 is evacuated, a discharge gas and, if necessary, a reaction gas are supplied to the vacuum chamber 2. Next, the moving electrodes 8, 8 are positioned above the edge 6 a of the crucible 6, and the plasma gun 3 is activated with the edge 6 a covered to generate a plasma beam P. It is drawn into the vacuum chamber 2 by the magnetic field of the beam converging coil 4, converged on the crucible 6 by the electric field of the movable electrodes 8, 8, the electric field of the crucible 6, and the magnetic field of the permanent magnet 5, thereby heating and evaporating the evaporation material J.

Although the heated evaporating material J has a reduced electric resistance, the surface of the evaporating material J is energized with the crucible 6 by thermionic electrons emitted from the evaporating material J, so that the irradiation of the plasma beam P is continued. Is done. When the evaporating material J is heated and starts to evaporate, the moving electrodes 8 and 8 are moved outward and retracted below the anti-adhesion plate 9 to prevent the evaporating material J from adhering to the upper surfaces of the moving electrodes 8 and 8. I do. At this time, voltage application to the moving electrodes 8 may be stopped to stabilize the convergence of the plasma beam P to the crucible 6. The evaporated material J reacts with the reaction gas and is deposited on the substrate S.

Since the evaporation material J is an insulating material,
It is expected that the irradiation of the plasma beam P to the evaporation material J stops due to the charge-up of the evaporation material J. However, since the plasma beam P converges on the crucible 6, the energization path formed in the vacuum chamber 2 is formed. Thus, the irradiation of the evaporation material J with the plasma beam P is continued, and the evaporation material J evaporates and is deposited on the substrate S.

When the deposition is completed, the plasma gun 3 is stopped, the substrate S is replaced, and the deposition process is performed again.
In this case, since the movable electrodes 8 and 8 are retracted below the deposition-preventing plate 9 during the vapor deposition process and the upper surface thereof is shielded, the vapor deposition of the vapor deposition substance is extremely small. Therefore, the start-up of the plasma gun 3 is performed easily and for a long time.

Next, a description will be given of experiments performed in the above-described vapor deposition apparatus 1 with and without the use of the moving electrodes 8. Discharge current: 120 A, discharge voltage: 120 V, discharge pressure: 2 × 10 ⁻⁴ Torr, oxygen flow rate: 10 sccm (reaction gas), Ar flow rate: 20 sc
When moving the movable electrodes 8, 8 under the conditions of cm (discharge gas) and SiO ₂ (evaporation material) to the area below the deposition-preventing plate 9, which is shielded from the plasma beam P, After starting the plasma gun 3 using only the crucible 6 as an electrode without using the moving electrodes 8, 8,
A 1 μm film was deposited on the substrate. When the plasma gun 3 was stopped and the plasma gun 3 was started up again, SiO ₂ deposited on the upper surface of the edge 6 a of the crucible and around the crucible 6 was used.
Since the crucible 6 lost its function as an electrode due to the insulating film made of, the plasma gun 3 could not be started up and abnormal discharge occurred.

The insulating film deposited on the upper surface of the edge portion 6a of the crucible is left as it is, and the moving electrodes 8 and 8 are formed as described above.
Was used as an electrode for starting the plasma gun 3, and the plasma gun 3 could be started smoothly. Further, when the evaporation material starts to evaporate, the movable electrodes 8, 8 are moved to a region under the deposition-preventing plate 9, which is shielded from the plasma beam P, and a 1 μm thick film is deposited on the substrate.
When the plasma gun 3 was stopped again and the movable electrodes 8 and 8 were moved and used as electrodes, and the plasma gun 3 was started up again, no trouble was found in starting up the plasma gun 3. Similarly, a film was deposited on the substrate by 1 μm at a time, and the operation of stopping and starting the plasma gun 3 was repeated eight times continuously (intermittent operation of the process). .

The vapor deposition process is not limited to the batch type process as in the vapor deposition apparatus 1 but may be a continuous type process in which the substrate is continuously passed through the vacuum chamber to perform the vapor deposition process.

[0017]

As is apparent from the above description, in the crucible mechanism in the vapor deposition apparatus according to the present invention, when the plasma gun is started, the moving electrode focuses the plasma beam on the crucible, and the evaporation material starts to evaporate. By the way, the moving electrode is moved to the shielding area formed by the deposition-preventing plate to prevent evaporation material from being deposited on the moving electrode. Therefore, even when the evaporation material is an insulating material and is deposited on the upper surface of the edge of the crucible and the crucible loses its function as an electrode, the starting of the plasma gun is reliably performed by the moving electrode, and intermittently. The plasma gun can be activated. In addition, since the upper surface of the moving electrode is covered with a deposition-preventing plate during the vapor deposition process, the deposition of the insulating substance is extremely small, and there is almost no need for maintenance such as removal of the deposited material, so that the work efficiency is improved accordingly. Can be.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view of a vapor deposition device having a crucible unit mechanism in a vapor deposition device according to the present invention.

FIG. 2 is a vertical cross-sectional view of a conventional vapor deposition device.

FIG. 3 is a longitudinal sectional view of a conventional vapor deposition apparatus having a deposition-preventing plate.

FIG. 4 is a longitudinal sectional view of a conventional vapor deposition apparatus having a movable deposition-preventing plate.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Vapor deposition apparatus, 2 ... Vacuum chamber, 3 ... Pressure gradient type large current low voltage plasma gun, 5 ... Permanent magnet for plasma beam deflection / convergence, 6 ... Crucible, 6a ... Crucible edge part, 7 ... Crucible part mechanism, 8: moving electrode, 9: anti-adhesion plate, 9a: opening, P ...
Plasma beam, S: substrate, J: evaporation material.

Claims (1)

[Claims] 1. An evaporation apparatus for evaporating an evaporating material made of an insulating material in a crucible by a plasma beam to form a film on a substrate, wherein the evaporating material can reciprocate above the crucible and above an edge of the crucible and outside thereof. While providing an electrode
A crucible mechanism in a vapor deposition apparatus, wherein a deposition-preventing plate having an opening with an outer shape of a crucible edge is provided above the electrode.