JP3318595B2 - Laser ion plating equipment - Google Patents
Laser ion plating equipmentInfo
- Publication number
- JP3318595B2 JP3318595B2 JP34152991A JP34152991A JP3318595B2 JP 3318595 B2 JP3318595 B2 JP 3318595B2 JP 34152991 A JP34152991 A JP 34152991A JP 34152991 A JP34152991 A JP 34152991A JP 3318595 B2 JP3318595 B2 JP 3318595B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- reaction gas
- evaporation
- laser
- ion plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
【0001】[0001]
【産業上の利用分野】この発明は、試料基板上に薄膜を
形成する装置に関し、さらには、レーザ光を用い、金
属、半導体等の導電性固体材料から成る蒸発用試料を蒸
発させ、試料基板上に蒸発用試料と反応ガスの成分から
成る化合物の硬質薄膜を形成するイオンプレーティング
装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for forming a thin film on a sample substrate, and further uses a laser beam to evaporate an evaporation sample made of a conductive solid material such as a metal or semiconductor. The present invention relates to an ion plating apparatus for forming a hard thin film of a compound composed of a sample for evaporation and a reaction gas on the sample.
【0002】[0002]
【従来の技術】図3に示す真空アーク放電を用いた蒸着
装置において、反応ガスを真空チェンバー内に導入する
ことで、蒸発用試料と反応ガスの成分からなる化合物薄
膜が高速形成されることが知られている。すなわち、蒸
発用試料4から成る陰極と陰極近傍に設置した陽極8間
で高電流の真空アーク放電させることで、蒸発用試料に
高密度エネルギーを付与し急速に加熱し蒸発用試料を高
速に蒸発させるとともに、高密度の放電により蒸発粒
子、反応ガスを高効率にイオン化することで、試料基板
17に蒸発用試料と反応ガスの成分からなる化合薄膜を
高速に形成する。例えば、Tiの蒸発用試料とN2 の反
応ガスを用い、圧力が0.8〜5Pa、アーク電流で50
〜100Aの条件でTiNが形成される。2. Description of the Related Art In a vapor deposition apparatus using a vacuum arc discharge shown in FIG. 3, by introducing a reaction gas into a vacuum chamber, a compound thin film composed of a sample for evaporation and components of the reaction gas can be formed at a high speed. Are known. That is, high-current vacuum arc discharge is applied between the cathode composed of the evaporating sample 4 and the anode 8 installed near the cathode, thereby giving high-density energy to the evaporating sample and rapidly heating it to evaporate the evaporating sample at high speed. At the same time, the vaporized particles and the reaction gas are ionized with high efficiency by high-density discharge, whereby a compound thin film composed of the sample for evaporation and the components of the reaction gas is formed on the sample substrate 17 at high speed. For example, using a Ti evaporation sample and a N 2 reaction gas, the pressure is 0.8 to 5 Pa and the arc current is 50.
TiN is formed under the conditions of 100100 A.
【0003】また、図4にレーザ光を用いた真空蒸着装
置を示す(特開平3−104862号公報)。真空チェ
ンバー1に設置した負電圧を印加した蒸発用試料4にレ
ーザ光11を集光照射し加熱することで蒸発粒子と熱電
子を放出させ、この2つの媒体の作用により、放電電流
が0.1Aという低電流でも安定した真空アーク放電が
得られる。この装置は図3に示した装置に比して、ドロ
ップレットと呼ばれる蒸発用試料の液滴の発生が抑制さ
れ、均質な薄膜が得られるという特徴がある。すなわ
ち、ドロップレットは蒸発用試料の過加熱によって発生
するが、図3に示す装置では、真空アーク放電を維持す
るため高い放電電流を下げることが不可能であり、過加
熱を避けることができない。一方、図4に示す装置で
は、放電電流を下げることができるため過加熱を抑制し
ドロップレットの発生を回避できる。FIG. 4 shows a vacuum deposition apparatus using a laser beam (Japanese Patent Application Laid-Open No. 3-1044862). The evaporation sample 4 and the thermoelectrons are emitted by condensing and irradiating the laser beam 11 to the evaporation sample 4 to which the negative voltage is applied, which is installed in the vacuum chamber 1, and the discharge current is reduced by the action of the two media. A stable vacuum arc discharge can be obtained even at a low current of 1 A. Compared to the apparatus shown in FIG. 3, this apparatus is characterized in that generation of droplets of a sample for evaporation called droplets is suppressed and a uniform thin film is obtained. That is, droplets are generated by overheating of the evaporation sample. However, in the apparatus shown in FIG. 3, it is impossible to reduce a high discharge current in order to maintain vacuum arc discharge, and it is not possible to avoid overheating. On the other hand, in the apparatus shown in FIG. 4, since the discharge current can be reduced, overheating can be suppressed and the generation of droplets can be avoided.
【0004】さらに、図3に示す方法では、電気絶縁性
の化合薄膜を形成する場合、放電が停止する問題があ
る。すなわち、アーク放電により生成される反応ガスの
イオンの一部は陰極電極に引き込まれるため、陰極電極
の表面に化合物の絶縁層が形成されバイアス効果が無く
なり放電が停止する。この問題に対し、図4に示す装置
では、陰極電極に相当する蒸発用試料に形成される絶縁
層はレーザ光によって蒸発、破壊されるため、安定した
放電を維持することができるという特徴がある。Further, the method shown in FIG. 3 has a problem that the discharge stops when an electrically insulating compound thin film is formed. That is, since a part of the ions of the reaction gas generated by the arc discharge is drawn into the cathode electrode, an insulating layer of the compound is formed on the surface of the cathode electrode, the bias effect is lost, and the discharge stops. In order to solve this problem, the apparatus shown in FIG. 4 has a feature that a stable discharge can be maintained because the insulating layer formed on the evaporation sample corresponding to the cathode electrode is evaporated and destroyed by the laser beam. .
【0005】[0005]
【発明が解決しようとする課題】図4の装置において反
応ガスを供給し化合薄膜を形成する場合、反応ガス供給
量が少ないと、蒸発用試料からの蒸発粒子と反応ガスと
の反応が充分でなく、蒸発用試料の成分が主体の薄膜が
形成される。一方、反応ガス供給量を増やし反応ガス圧
力を上げると、放電のプラズマ密度が上がり蒸発粒子と
反応ガスの活性化が促進されるが、その場合には試料基
板近傍の圧力も高まるため化合薄膜の試料基板に対する
密着力が低下する問題が発生する。In the apparatus shown in FIG. 4, when a reaction gas is supplied to form a compound thin film, if the supply amount of the reaction gas is small, the reaction between the vaporized particles from the evaporation sample and the reaction gas is sufficient. Instead, a thin film mainly composed of the components of the evaporation sample is formed. On the other hand, if the reaction gas pressure is increased by increasing the supply amount of the reaction gas, the plasma density of the discharge is increased and the activation of the evaporated particles and the reaction gas is promoted. There is a problem that the adhesion to the sample substrate is reduced.
【0006】本発明はこのような問題を解決するために
なされたもので、均質かつ高密着性の高硬度の化合薄膜
を得ることができるレーザイオンプレーティング装置を
提供することを目的とする。The present invention has been made to solve such a problem, and an object of the present invention is to provide a laser ion plating apparatus capable of obtaining a compound thin film having high hardness and uniformity and high adhesion.
【0007】[0007]
【課題を解決するための手段】このための本発明は下記
の内容を要旨とする。 (1)真空チェンバー内に、反応ガスを導入しながら、
負電圧を印加した蒸発用試料にレーザ光を集光照射し
て、蒸発用試料に対向して配置され、負バイアス電圧が
印加されている試料基板に蒸発用試料材料と反応ガス材
料とからなる化合薄膜を形成するレーザイオンプレーテ
ィング装置において、前記真空チェンバー内に反応ガス
供給路を設け、前記蒸発用試料を反応ガス供給路内のガ
ス吹き出し口近傍で、かつレーザ集光部の近傍に配置す
ると共に、前記ガス吹き出し口を前記蒸発用試料のレー
ザ光被照射部に面し、かつ蒸発粒子が前記試料基板に向
けて飛翔する方向の位置に設け、且つ陽極をガス吹き出
し口の真空チェンバー側に設けたことを特徴とするレー
ザイオンプレーティング装置。 (2)吹き出し口の真空チェンバー側に蒸発用試料の蒸
発粒子が試料基板に向けて飛翔する方向に一致する磁界
を発生させる磁界発生器を具備したことを特徴とする上
記(1)記載のレーザイオンプレーティング装置。SUMMARY OF THE INVENTION The present invention for this purpose has the following contents. (1) While introducing the reaction gas into the vacuum chamber,
The laser light is focused and irradiated to the evaporation sample a negative voltage is applied, it is arranged opposite to the evaporation sample, and a vaporization sample material and the reaction gas material to the sample substrate a negative bias voltage is applied in the laser ion plating apparatus for forming a compound thin film, the vacuum reaction gas supply passage provided within the chamber, gas of the vaporized sample to the reaction gas supply path
In scan outlet vicinity and thereby arranged in the vicinity of the laser focusing unit, the direction facing the gas outlet in the laser beam irradiated portion of the evaporating sample, and evaporated particles fly toward the sample substrate And an anode is provided on the vacuum chamber side of the gas blowing port. (2) The laser according to the above (1), further comprising a magnetic field generator on the vacuum chamber side of the outlet to generate a magnetic field in a direction in which the evaporated particles of the evaporation sample fly toward the sample substrate. Ion plating equipment.
【0008】[0008]
【作用】本発明において、反応ガス供給路に反応ガスを
導入すると、ガス吹き出し口の流路抵抗により、真空チ
ェンバーの圧力に対し反応ガス供給路内の圧力が高くな
る。このため、蒸発用試料近傍の圧力上昇により、放電
のプラズマ密度が上昇し蒸発粒子、反応ガスを活性化
し、両者の化合反応を促進することができるほか、試料
基板近傍の圧力上昇を抑え化合薄膜の試料基板に対する
密着力の低下を防ぐことができる。In the present invention, when a reactant gas is introduced into the reactant gas supply passage, the pressure in the reactant gas supply passage becomes higher than the pressure in the vacuum chamber due to the flow path resistance of the gas outlet. For this reason, the increase in pressure near the sample for evaporation increases the plasma density of the discharge, activates the evaporating particles and the reaction gas, and promotes the compounding reaction between the two. Can be prevented from lowering the adhesion to the sample substrate.
【0009】さらに、ガス吹き出し孔にガス流に沿った
磁界を発生させることで、放電により蒸発粒子と一緒に
発生する電子をサイクロトロン運動させ、電子と蒸発粒
子,反応ガスの衝突頻度を高めることで、蒸発粒子、反
応ガスの活性化がさらに促進され、両者の化合反応が促
進される。Further, by generating a magnetic field along the gas flow in the gas blowing hole, electrons generated together with the evaporating particles due to the discharge are caused to perform cyclotron motion, thereby increasing the collision frequency between the electrons, the evaporating particles and the reaction gas. The activation of the vaporized particles and the reaction gas is further promoted, and the compounding reaction of the two is promoted.
【0010】[0010]
【実施例】図1は、本発明の一実施例を示す。真空チェ
ンバー1に反応ガス供給路2を設置し、その中に陰極電
源3に接続された例えば軸回転しているリング状の導電
性の材料から成る蒸発用材料4を設置する。前記反応ガ
ス供給路2は、レーザ導入窓5により真空シールされて
おり、該レーザ導入窓5近傍に反応ガス導入口6と、前
記蒸発用試料4のレーザ光被照射部に面し蒸発粒子が飛
翔する位置にガス吹き出し口7を有している。試料基板
17は、蒸発粒子、反応ガスの進行方向に設置し、該試
料基板を加熱するヒータ15と該試料基板に負電圧を印
加するバイアス回路16が接続されている。FIG. 1 shows an embodiment of the present invention. A reaction gas supply path 2 is installed in a vacuum chamber 1, and an evaporating material 4 made of, for example, a ring-shaped conductive material which is connected to a cathode power supply 3 is installed therein. The reaction gas supply path 2 is vacuum-sealed by a laser introduction window 5. A reaction gas introduction port 6 is provided in the vicinity of the laser introduction window 5, and evaporating particles facing the laser beam irradiated portion of the evaporation sample 4 are removed. It has a gas outlet 7 at the position where it flies. The sample substrate 17 is provided in the traveling direction of the evaporating particles and the reaction gas, and a heater 15 for heating the sample substrate and a bias circuit 16 for applying a negative voltage to the sample substrate are connected.
【0011】反応ガス導入口6より微量の反応ガスを導
入する。レーザ発振器10から発振されたレーザ光11
は、平面鏡12によって水平方向に曲げられ集光レンズ
13によって集光され、レーザ導入窓5を通過し反応ガ
ス供給路2内に導入され、軸回転しているリング状の蒸
発用試料4の外周面に接線方向に照射する。A small amount of reaction gas is introduced from the reaction gas inlet 6. Laser light 11 oscillated from laser oscillator 10
Is bent in a horizontal direction by a plane mirror 12, condensed by a condenser lens 13, passed through a laser introduction window 5, introduced into a reaction gas supply path 2, and rotated around an axis of a ring-shaped evaporation sample 4. Irradiate the surface tangentially.
【0012】この状態では、蒸発用試料4のレーザ照射
部より、熱電子放出による数十mAの僅かな電流が流れ
る。この状態から例えば、照射レーザパワー密度をある
しきい値に上げるとレーザ被照射部より電子の放出が急
増し真空アーク放電が開始しアーク柱14が形成される
とともに、蒸発粒子量が急増する。その後、陰極電源3
で放電電流を調節するとともに反応ガスの供給量を調節
する。放電によりイオン化した蒸発粒子と反応ガスは、
あらかじめヒータ15で加熱され、バイアス電源16に
より負のバイアス電位が印加されている試料基板17の
方向に飛び出し、該試料基板上に堆積し蒸発粒子と反応
ガスの成分からなる化合物の薄膜を形成する。なお、該
試料基板17の前には可動シャッタ18を設置し、蒸発
の開始時に蒸発用試料4の表面に付着している不純物の
試料基板17への蒸着を防ぐとともに、化合薄膜の形成
時間を任意に調節するようにする。さらに、図2に示す
ガス吹き出し口7の近傍に磁界発生器19を設置し、蒸
発粒子が飛行する方向に並行な磁界を発生させること
で、蒸発粒子と反応ガスのイオン化効率をあげる。In this state, a small current of several tens mA flows due to thermionic emission from the laser irradiation part of the evaporation sample 4. From this state, for example, when the irradiation laser power density is increased to a certain threshold value, the emission of electrons from the laser-irradiated portion rapidly increases, a vacuum arc discharge starts, the arc column 14 is formed, and the amount of evaporated particles rapidly increases. Then, the cathode power supply 3
To adjust the discharge current and the supply amount of the reaction gas. Evaporated particles and reaction gas ionized by the discharge are:
It is heated in advance by the heater 15 and jumps out in the direction of the sample substrate 17 to which a negative bias potential is applied by the bias power supply 16, deposits on the sample substrate, and forms a thin film of a compound composed of evaporating particles and a reaction gas component. . A movable shutter 18 is provided in front of the sample substrate 17 to prevent impurities adhering to the surface of the evaporation sample 4 from being deposited on the sample substrate 17 at the start of evaporation, and to reduce the formation time of the compound thin film. Adjust it arbitrarily. Further, a magnetic field generator 19 is installed near the gas outlet 7 shown in FIG. 2 to generate a magnetic field parallel to the direction in which the evaporated particles fly, thereby increasing the ionization efficiency of the evaporated particles and the reaction gas.
【0013】以上がこの発明の一実施例をなすレーザイ
オンプレーティング装置の構成およびその作動である
が、次に上記実施例における具体例として、TiN薄膜
の形成例を示す。The above is the configuration and operation of the laser ion plating apparatus according to one embodiment of the present invention. Next, as a specific example of the above embodiment, an example of forming a TiN thin film will be described.
【0014】試料基板17としてSUS304合金、M
oなどを用い、蒸発用試料4として外径30mm、内径1
0mmの工業用純Tiリングを用いた。また、試料基板1
7にはバイアス電源16で−200Vの負電圧を印加し
ヒータ15で150℃に加熱した。真空チェンバー1を
3×10-4Pa以下の圧力に排気した後、反応ガスとして
窒素を20SCCM導入した。この時のチェンバー内圧力
は、4×10-3Paであり、反応ガス供給路の圧力は約
0.4Paであった。陰極電源3が接続されているリング
状の蒸発用試料4を約10rpm 程度の回転数で回転させ
ながら蒸発用試料4の外周面にパルス幅220nS、周波
数1kHz 、ピークパワー130KWのQスイッチYAGレ
ーザ光11を接線方向から焦点をずらして照射した。そ
の後、焦点位置を合わせることで、アーク放電を開始さ
せ、放電電流を0.5Aに調節し放電を持続させた。そ
の後、シャッター18を開け5分間、成膜した。As the sample substrate 17, SUS304 alloy, M
o, etc., as an evaporation sample 4, an outer diameter of 30 mm and an inner diameter of
A 0 mm industrial pure Ti ring was used. Also, the sample substrate 1
7, a negative voltage of -200 V was applied by a bias power supply 16 and heated to 150 ° C. by a heater 15. After evacuating the vacuum chamber 1 to a pressure of 3 × 10 −4 Pa or less, 20 SCCM of nitrogen was introduced as a reaction gas. At this time, the pressure in the chamber was 4 × 10 −3 Pa, and the pressure in the reaction gas supply passage was about 0.4 Pa. A Q-switched YAG laser beam having a pulse width of 220 ns, a frequency of 1 kHz and a peak power of 130 KW is applied to the outer peripheral surface of the evaporation sample 4 while rotating the ring-shaped evaporation sample 4 to which the cathode power supply 3 is connected at a rotation speed of about 10 rpm. 11 was irradiated with the focus shifted from the tangential direction. Thereafter, the arc discharge was started by adjusting the focal position, the discharge current was adjusted to 0.5 A, and the discharge was continued. Thereafter, the shutter 18 was opened to form a film for 5 minutes.
【0015】この実験例で、SUS304試料基板上に
厚さ3μmのTiNを形成した。この膜は、マイクロビ
ッカース硬度がHv2600、基板への膜付着力が引掻き
試験法で臨界荷重Lcで40Nという高い値を示した。
また、レーザ光11としてCO2 レーザを用い、レーザ
パワーが800Wの条件でTiN膜を形成することがで
きた。この場合、前記蒸発用試料4はTiリングの内面
を水冷しTiリングの溶融、変形を防いだ。なお、この
方法で、蒸発粒子の飛来によるレーザ光の導入窓の汚れ
が認められなかったほか、真空チェンバーへの付着も少
なかった。In this experimental example, 3 μm thick TiN was formed on a SUS304 sample substrate. This film showed a high value of microvickers hardness of Hv2600 and a film adhesion to a substrate of 40 N at a critical load Lc measured by a scratch test.
Also, a TiN film could be formed under the condition that the laser power was 800 W using a CO 2 laser as the laser beam 11. In this case, the evaporating sample 4 water-cooled the inner surface of the Ti ring to prevent melting and deformation of the Ti ring. In this method, contamination of the laser light introduction window due to the flying of the evaporated particles was not observed, and adhesion to the vacuum chamber was small.
【0016】[0016]
【発明の効果】本発明による装置では、従来装置に比し
て蒸発粒子と反応ガスとが充分化合し、且つ試料基板と
の密着性に優れた化合薄膜が形成できる。また、ガス導
入路のガス吹き出し孔を蒸発粒子の飛翔方向と反応ガス
吹き出し方向を一致させることで、ガス流による蒸発粒
子の発散を防ぎ蒸発粒子を高効率に試料基板に付着でき
るほか、反応ガス供給路内の反応ガス流れにより蒸発粒
子のレーザ導入窓への飛来、汚染を阻止することがで
き、安定した運転が可能になる。According to the apparatus of the present invention, the vaporized particles and the reaction gas are sufficiently combined with each other as compared with the conventional apparatus, and a compound thin film having excellent adhesion to the sample substrate can be formed. In addition, by evaporating the evaporating particles and the reacting gas blowing direction of the gas introduction holes in the gas introduction path to prevent the evaporating particles from diverging due to the gas flow, the evaporating particles can be efficiently attached to the sample substrate. The flow of the reactant gas in the supply path can prevent evaporated particles from flying to the laser introduction window and prevent contamination, thereby enabling stable operation.
【図1】本発明の一実施例を示すレーザイオンプレーテ
ィング装置の概略図を示す。FIG. 1 is a schematic view of a laser ion plating apparatus showing one embodiment of the present invention.
【図2】図1の反応ガス吹き出し口近傍に磁界を発生す
る磁気発生器を設置したレーザイオンプレーティング装
置図を示す。FIG. 2 is a diagram of a laser ion plating apparatus provided with a magnetic generator for generating a magnetic field in the vicinity of a reaction gas outlet of FIG.
【図3】従来の真空アーク放電を用いた蒸着装置図。FIG. 3 is a diagram of a conventional vapor deposition apparatus using vacuum arc discharge.
【図4】従来のレーザ蒸着装置図を示す。FIG. 4 shows a diagram of a conventional laser vapor deposition apparatus.
1 真空チェンバー 2 反応ガス供給路 3 陰極電源 4 蒸発用試料 5 レーザ導入窓 6 反応ガス導入口 7 ガス吹き出し口 8 陽極 10 レーザ発振器 11 レーザ光 12 平面鏡 13 集光レンズ 14 アーク柱 15 ヒータ 16 バイアス電源 17 試料基板 18 可動シャッタ 19 磁界発生器 20 凹面鏡 DESCRIPTION OF SYMBOLS 1 Vacuum chamber 2 Reaction gas supply path 3 Cathode power supply 4 Evaporation sample 5 Laser introduction window 6 Reaction gas introduction port 7 Gas outlet 8 Anode 10 Laser oscillator 11 Laser light 12 Planar mirror 13 Condenser lens 14 Arc column 15 Heater 16 Bias power supply 17 sample substrate 18 movable shutter 19 magnetic field generator 20 concave mirror
───────────────────────────────────────────────────── フロントページの続き 審査官 山田 靖 (56)参考文献 特開 平4−246167(JP,A) 特開 平2−310363(JP,A) 特開 平3−104862(JP,A) 特開 平3−39464(JP,A) 特公 昭53−18185(JP,B2) (58)調査した分野(Int.Cl.7,DB名) C23C 14/00 - 14/58 ────────────────────────────────────────────────── ─── Continuation of the front page Examiner Yasushi Yamada (56) References JP-A-4-246167 (JP, A) JP-A-2-310363 (JP, A) JP-A-3-104862 (JP, A) Kaihei 3-39464 (JP, A) JP53-18185 (JP, B2) (58) Fields investigated (Int. Cl. 7 , DB name) C23C 14/00-14/58
Claims (2)
ながら、負電圧を印加した蒸発用試料にレーザ光を集光
照射して、蒸発用試料に対向して配置され、負バイアス
電圧が印加されている試料基板に蒸発用試料材料と反応
ガス材料とからなる化合薄膜を形成するレーザイオンプ
レーティング装置において、前記真空チェンバー内に反
応ガス供給路を設け、前記蒸発用試料を反応ガス供給路
内のガス吹き出し口近傍で、かつレーザ集光部の近傍に
配置すると共に、前記ガス吹き出し口を前記蒸発用試料
のレーザ光被照射部に面し、かつ蒸発粒子が前記試料基
板に向けて飛翔する方向の位置に設け、且つ陽極をガス
吹き出し口の真空チェンバー側に設けたことを特徴とす
るレーザイオンプレーティング装置。1. A laser beam is condensed and irradiated on an evaporation sample to which a negative voltage is applied while introducing a reaction gas into a vacuum chamber, and the laser beam is arranged to face the evaporation sample and a negative bias voltage is applied. In a laser ion plating apparatus for forming a compound thin film comprising a sample material for evaporation and a reaction gas material on a sample substrate, a reaction gas supply path is provided in the vacuum chamber, and the sample for evaporation is supplied to the reaction gas supply path. gas outlet near the inner and together arranged in the vicinity of the laser focusing unit, facing the gas outlet in the laser beam irradiated portion of the evaporating sample, and evaporated particles toward said sample substrate flying A laser ion plating apparatus, wherein the anode is provided on the vacuum chamber side of the gas blowing port.
料の蒸発粒子が試料基板に向けて飛翔する方向に一致す
る磁界を発生させる磁界発生器を具備したことを特徴と
する請求項1記載のレーザイオンプレーティング装置。2. An evaporation test is provided on the vacuum chamber side of the outlet.
2. The laser ion plating apparatus according to claim 1, further comprising a magnetic field generator for generating a magnetic field corresponding to a direction in which the evaporated particles of the material fly toward the sample substrate .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34152991A JP3318595B2 (en) | 1991-12-24 | 1991-12-24 | Laser ion plating equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34152991A JP3318595B2 (en) | 1991-12-24 | 1991-12-24 | Laser ion plating equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05171426A JPH05171426A (en) | 1993-07-09 |
JP3318595B2 true JP3318595B2 (en) | 2002-08-26 |
Family
ID=18346775
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34152991A Expired - Lifetime JP3318595B2 (en) | 1991-12-24 | 1991-12-24 | Laser ion plating equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3318595B2 (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6592726B1 (en) | 1999-03-23 | 2003-07-15 | Sumitomo Electric Industries, Ltd. | Vacuum arc evaporation method, vacuum arc evaporation system, and rotary cutting tool |
EA015720B1 (en) * | 2008-02-13 | 2011-10-31 | Александр Криманов | Method and device for guiding of the ion flow |
EE200900010A (en) * | 2008-02-13 | 2009-10-15 | Krimanov Aleksander | Method and apparatus for ion flow control |
-
1991
- 1991-12-24 JP JP34152991A patent/JP3318595B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05171426A (en) | 1993-07-09 |
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