JPS5094879A - - Google Patents

Info

Publication number
JPS5094879A
JPS5094879A JP14332874A JP14332874A JPS5094879A JP S5094879 A JPS5094879 A JP S5094879A JP 14332874 A JP14332874 A JP 14332874A JP 14332874 A JP14332874 A JP 14332874A JP S5094879 A JPS5094879 A JP S5094879A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14332874A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5094879A publication Critical patent/JPS5094879A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/261—Bombardment with radiation to produce a nuclear reaction transmuting chemical elements

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP14332874A 1973-12-14 1974-12-13 Pending JPS5094879A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2362320A DE2362320A1 (en) 1973-12-14 1973-12-14 Homogeneous doping of silicon monocrystals - by controlled irradiation with thermal neutrons to give desired position and intensity of doping

Publications (1)

Publication Number Publication Date
JPS5094879A true JPS5094879A (en) 1975-07-28

Family

ID=5900820

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14332874A Pending JPS5094879A (en) 1973-12-14 1974-12-13

Country Status (2)

Country Link
JP (1) JPS5094879A (en)
DE (1) DE2362320A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109865A (en) * 1976-03-12 1977-09-14 Nippon Telegr & Teleph Corp <Ntt> Inpurity adding method to silicon
JPS62226897A (en) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk Production of single crystal
JP2007176725A (en) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd Method for manufacturing neutron-irradiated silicon single crystal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52109865A (en) * 1976-03-12 1977-09-14 Nippon Telegr & Teleph Corp <Ntt> Inpurity adding method to silicon
JPS5328741B2 (en) * 1976-03-12 1978-08-16
JPS62226897A (en) * 1986-03-27 1987-10-05 Komatsu Denshi Kinzoku Kk Production of single crystal
JP2007176725A (en) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd Method for manufacturing neutron-irradiated silicon single crystal

Also Published As

Publication number Publication date
DE2362320A1 (en) 1975-06-19

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