JPS5734099A - Epitaxial growth of liquid phase - Google Patents
Epitaxial growth of liquid phaseInfo
- Publication number
- JPS5734099A JPS5734099A JP10868580A JP10868580A JPS5734099A JP S5734099 A JPS5734099 A JP S5734099A JP 10868580 A JP10868580 A JP 10868580A JP 10868580 A JP10868580 A JP 10868580A JP S5734099 A JPS5734099 A JP S5734099A
- Authority
- JP
- Japan
- Prior art keywords
- growth
- insb
- separating material
- melt
- container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To prevent the thermal corrosion of base plate crystal and to obtain a high-quality growth layer of thin film easily without using a high-purity gas, by carrying out epitaxial growth of liquid phase by utilizing a separating material of atmosphere between a melt for growth and its atmosphere.
CONSTITUTION: The base plate crystal 38 of InSb is set in the container 19 and the atmospheric gas separating material 34 is put in it. The melt 36 for growth obtained by adding InSb and a p type impurity to In is added to the container 18, and the atmospheric gas separating material 33 is added to it. Similarly, the melt 37 for growth prepared by adding InSb and an n type impurity to In is fed to the container 21, and the atmospheric gas separating material 35 is fed to it. A boat is heated to 250°C and InSb and the impurity are dissolved. The sliding member 13 is moved, the electrically-conductive holes 16 and 24 are brought in line, and the separating material 34 is transferred to a material chamber for growth. Similarly, the electrically-conductive holes 15 and 23 are brought in line, the melt 36 and the separating material 33 are sent to the container 19. The base plate crystal 38 is brought into contact with an In melt for growth. The temperature is lowered gradually from 250°C. During cooling, a p type InSb is subjected to epitaxial growth on the base plate crystal of InSb. The surface of the grown crystal is covered with the atmospheric gas separating material during cooling.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868580A JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10868580A JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5734099A true JPS5734099A (en) | 1982-02-24 |
| JPS621358B2 JPS621358B2 (en) | 1987-01-13 |
Family
ID=14491056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10868580A Granted JPS5734099A (en) | 1980-08-06 | 1980-08-06 | Epitaxial growth of liquid phase |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5734099A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6283399A (en) * | 1985-10-04 | 1987-04-16 | Mitsubishi Electric Corp | Boat for liquid phase epitaxial growth |
| US5554472A (en) * | 1994-02-23 | 1996-09-10 | Fuji Electric Co., Ltd. | Electrophotographic photoconductors |
-
1980
- 1980-08-06 JP JP10868580A patent/JPS5734099A/en active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6283399A (en) * | 1985-10-04 | 1987-04-16 | Mitsubishi Electric Corp | Boat for liquid phase epitaxial growth |
| JPH0260640B2 (en) * | 1985-10-04 | 1990-12-17 | Mitsubishi Electric Corp | |
| US5554472A (en) * | 1994-02-23 | 1996-09-10 | Fuji Electric Co., Ltd. | Electrophotographic photoconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS621358B2 (en) | 1987-01-13 |
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