JPS5538039A - Device for liquid-phase growth of semiconductor - Google Patents

Device for liquid-phase growth of semiconductor

Info

Publication number
JPS5538039A
JPS5538039A JP11098578A JP11098578A JPS5538039A JP S5538039 A JPS5538039 A JP S5538039A JP 11098578 A JP11098578 A JP 11098578A JP 11098578 A JP11098578 A JP 11098578A JP S5538039 A JPS5538039 A JP S5538039A
Authority
JP
Japan
Prior art keywords
liquid
base
melted
housing part
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11098578A
Other languages
Japanese (ja)
Inventor
Tadashi Komatsubara
Akihiro Hachiman
Masaru Kawachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11098578A priority Critical patent/JPS5538039A/en
Publication of JPS5538039A publication Critical patent/JPS5538039A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To provide a device in which deterioration due to oxidation is minimized, by using quartz as the material of the part of the container which comes in contact with melted semiconductor liquid in a device to grow compound semiconductor in liquid phase, and using sapphire as the material for base supporting members.
CONSTITUTION: Melted liquid tank 5, made of quartz, is placed on base-plate housing part 1, made of carbon, whose inner surface is protected by quartz. Sliding plate 9 is provided between the bottom part of melted liquid tank 5 and base-plate housing part 1 so as to maintain airlightness. At the time of starting liquid-phase growing, by moving sliding plate 9, hole 7 and hole 10 are fitted together, and, melted semiconductor liquid which is contained in melted liquid tank 5 is drawn into base-plate housing part 1. Oxidation-resisting and heat-conducting material, such as sapphire, is used as the material for base-plate supporting member 3 inside base-plate housing part 1. Since no carbon is used for the part which comes in contact with melted liquid, the apparatus can be used for many hours, and it is possible to obtain a liquid-phase grown layer of uniform quality.
COPYRIGHT: (C)1980,JPO&Japio
JP11098578A 1978-09-09 1978-09-09 Device for liquid-phase growth of semiconductor Pending JPS5538039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11098578A JPS5538039A (en) 1978-09-09 1978-09-09 Device for liquid-phase growth of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11098578A JPS5538039A (en) 1978-09-09 1978-09-09 Device for liquid-phase growth of semiconductor

Publications (1)

Publication Number Publication Date
JPS5538039A true JPS5538039A (en) 1980-03-17

Family

ID=14549472

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11098578A Pending JPS5538039A (en) 1978-09-09 1978-09-09 Device for liquid-phase growth of semiconductor

Country Status (1)

Country Link
JP (1) JPS5538039A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176965U (en) * 1982-05-18 1983-11-26 トヨタ自動車株式会社 Electrodeposition coating equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58176965U (en) * 1982-05-18 1983-11-26 トヨタ自動車株式会社 Electrodeposition coating equipment
JPS621244Y2 (en) * 1982-05-18 1987-01-13

Similar Documents

Publication Publication Date Title
JPS5538039A (en) Device for liquid-phase growth of semiconductor
JPS5777098A (en) Method and apparatus for growing znse in liquid phase
JPS5711898A (en) Liquid-phase epitaxial growth
JPS56155527A (en) Apparatus for liquid phase epitaxial growth
JPS547861A (en) Liquid phase epitaxial growth method
JPS5645890A (en) Crystal growing apparatus
JPS5659696A (en) Liquid phase epitaxial growing apparatus
JPS54146280A (en) Epitaxial-growth apparatus in liquid phase
JPS54144175A (en) Liquid phase epitaxial growth device
JPS5252570A (en) Device for production of compound semiconductor
JPS5734099A (en) Epitaxial growth of liquid phase
JPS5380965A (en) Liquid-phase growth method
JPS52109866A (en) Liquid epitaxial growing method
JPS554947A (en) Method of growing liquid phase epitaxial
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor
JPS5575998A (en) Liquid phase epitaxial growing method
JPS5387985A (en) Gaseous phase epitaxial growth method for compound semiconductor crystal
JPS5567130A (en) Method of manufacturing semiconductor crystal
JPS52149080A (en) Crystal thin film of compound semiconductor
JPS5381487A (en) Method and apparatus for liquid phase epitaxial growth
JPS5388570A (en) Liquid phase epitaxial growth apparatus
JPS53116775A (en) Vapor phase growth apparatus of semiconductor crystals
JPS5515940A (en) Liquid phase epitaxial growing method
JPS56114316A (en) Boat for liquid phase epitaxial growth
JPS5776828A (en) Manufacture of semiconductor device