JPS5567130A - Method of manufacturing semiconductor crystal - Google Patents

Method of manufacturing semiconductor crystal

Info

Publication number
JPS5567130A
JPS5567130A JP14031278A JP14031278A JPS5567130A JP S5567130 A JPS5567130 A JP S5567130A JP 14031278 A JP14031278 A JP 14031278A JP 14031278 A JP14031278 A JP 14031278A JP S5567130 A JPS5567130 A JP S5567130A
Authority
JP
Japan
Prior art keywords
substrate
gas
tube
molten substance
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14031278A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Saburo Takamiya
Wataru Suzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14031278A priority Critical patent/JPS5567130A/en
Priority to DE19792945333 priority patent/DE2945333C2/en
Publication of JPS5567130A publication Critical patent/JPS5567130A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To prevent defective lamination when bringing a molten substance into contact with a semiconductor substrate to cause epitaxial growth at liquid phase, by cleaning up the surface of the substrate with gas of halogenated hydrogen which contains one of the constituent elements of the substrate or the molten substance, before causing the growth.
CONSTITUTION: A boat 3 for causing growth at liquid phase, on which a GaAs substrate 4 and a molten substance 5 are prepared, is placed in a low-temperature zone of a reaction tube 2. H2 gas is introduced into the tube 2 through a flow meter 7 to thoroughly replace the remaining gas in the tube by the H2 gas. Then, flow meters 7, 8 are regulated to introduce AsCl3 gas 9 at the rate of 7×10-5W2×10-2% by mol into the tube 2 and the boat 3 is transferred to a zone of 800°C. After that, the substrate 4 is brought into contact with the molten substance 5 and the supply of the AsCl3 gas 9 is stopped. After the lapse of about 20 minutes, the interior of the tube 2 is slowly cooled to epitaxially grow a GaAs layer on the substrate 4. The surface of the substrate 4 is thus made clean and uniform before the growing. This results in preventing the boundary surface of the grown layer from being recessed or protruded.
COPYRIGHT: (C)1980,JPO&Japio
JP14031278A 1978-11-14 1978-11-14 Method of manufacturing semiconductor crystal Pending JPS5567130A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14031278A JPS5567130A (en) 1978-11-14 1978-11-14 Method of manufacturing semiconductor crystal
DE19792945333 DE2945333C2 (en) 1978-11-14 1979-11-09 Method for epitaxial growth of a gallium arsenide layer on a gallium arsenide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14031278A JPS5567130A (en) 1978-11-14 1978-11-14 Method of manufacturing semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS5567130A true JPS5567130A (en) 1980-05-21

Family

ID=15265859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14031278A Pending JPS5567130A (en) 1978-11-14 1978-11-14 Method of manufacturing semiconductor crystal

Country Status (2)

Country Link
JP (1) JPS5567130A (en)
DE (1) DE2945333C2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2503130B2 (en) * 1991-07-29 1996-06-05 信越半導体株式会社 Liquid phase growth method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638054B2 (en) * 1974-07-04 1981-09-03

Also Published As

Publication number Publication date
DE2945333C2 (en) 1983-12-29
DE2945333A1 (en) 1980-05-22

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