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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP14333876ApriorityCriticalpatent/JPS5368570A/en
Publication of JPS5368570ApublicationCriticalpatent/JPS5368570A/en
PURPOSE: To make the supply of epitaxial film forming molecules to substrate crystal surface uniform and obtain a grown layer of an even thickness by beforehand making rough the surface of a support jig for placement of a semiconductor crystal substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP14333876A1976-12-011976-12-01Formation method of semiconductor epitaxial film
PendingJPS5368570A
(en)