JPS645999A - Production of thin film of ferroelectric single crystal - Google Patents

Production of thin film of ferroelectric single crystal

Info

Publication number
JPS645999A
JPS645999A JP16216587A JP16216587A JPS645999A JP S645999 A JPS645999 A JP S645999A JP 16216587 A JP16216587 A JP 16216587A JP 16216587 A JP16216587 A JP 16216587A JP S645999 A JPS645999 A JP S645999A
Authority
JP
Japan
Prior art keywords
single crystal
thin film
lithium niobate
plate
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16216587A
Other languages
Japanese (ja)
Inventor
Toshinori Nozawa
Hiroshi Miyazawa
Toshio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16216587A priority Critical patent/JPS645999A/en
Publication of JPS645999A publication Critical patent/JPS645999A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To easily form a single crystal and to obtain the title thin film of a ferroelectric single crystal by depositing a thin single crystal film on a substrate substance through the thin film of an amorphous or polycrystal ferroelectric single crystal consisting of the same substance as the single crystal. CONSTITUTION:The thin film of an amorphous or polycrystal ferroelectric single crystal is deposited in specified thickness on the substrate substance. The thin film of a single crystal consisting of the same material as the above- mentioned thin film is deposited on the thin film while heating the single crystal. For example, a sapphire plate 1 is cleaned to obtain a clean surface, and amorphous lithium niobate is formed on the plate 1 in about 40-70mm thickness as a predeposited first layer 2 while keeping the plate 1 at a low temp. such as room temp. to mitigate the mismatching in the lattice constant between sapphire and lithium niobate. The sapphire plate 1 is then heated to about 500-600 deg.C, and a second layer 3 (thin single crystal film) of lithium niobate is formed. By this method, the thin film of a lithium niobate single crystal having good characteristics can be formed on the sapphire plate, etc., having the lattice constant highly mismatched with that of the thin film.
JP16216587A 1987-06-29 1987-06-29 Production of thin film of ferroelectric single crystal Pending JPS645999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16216587A JPS645999A (en) 1987-06-29 1987-06-29 Production of thin film of ferroelectric single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16216587A JPS645999A (en) 1987-06-29 1987-06-29 Production of thin film of ferroelectric single crystal

Publications (1)

Publication Number Publication Date
JPS645999A true JPS645999A (en) 1989-01-10

Family

ID=15749258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16216587A Pending JPS645999A (en) 1987-06-29 1987-06-29 Production of thin film of ferroelectric single crystal

Country Status (1)

Country Link
JP (1) JPS645999A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
JPH08212830A (en) * 1994-11-11 1996-08-20 Fuji Xerox Co Ltd Orienting ferroelectric thin film element and its manufacture
JP2006195383A (en) * 2005-01-17 2006-07-27 Nippon Telegr & Teleph Corp <Ntt> Optical modulator and its manufacturing method
KR100816626B1 (en) * 2000-08-24 2008-03-24 오우크-미츠이, 인크 . Formation of an embedded capacitor plane using a thin dielectric
JP2008069058A (en) * 2006-09-15 2008-03-27 Nippon Telegr & Teleph Corp <Ntt> LiNbO3 EPITAXIAL FILM DEPOSITION METHOD
WO2021066156A1 (en) * 2019-10-04 2021-04-08 株式会社Flosfia Crystalline laminate structure and semiconductor device
WO2024075690A1 (en) * 2022-10-05 2024-04-11 株式会社シンクロン Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5070026A (en) * 1989-06-26 1991-12-03 Spire Corporation Process of making a ferroelectric electronic component and product
JPH08212830A (en) * 1994-11-11 1996-08-20 Fuji Xerox Co Ltd Orienting ferroelectric thin film element and its manufacture
KR100816626B1 (en) * 2000-08-24 2008-03-24 오우크-미츠이, 인크 . Formation of an embedded capacitor plane using a thin dielectric
JP2006195383A (en) * 2005-01-17 2006-07-27 Nippon Telegr & Teleph Corp <Ntt> Optical modulator and its manufacturing method
JP2008069058A (en) * 2006-09-15 2008-03-27 Nippon Telegr & Teleph Corp <Ntt> LiNbO3 EPITAXIAL FILM DEPOSITION METHOD
WO2021066156A1 (en) * 2019-10-04 2021-04-08 株式会社Flosfia Crystalline laminate structure and semiconductor device
WO2024075690A1 (en) * 2022-10-05 2024-04-11 株式会社シンクロン Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof

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