JPS645999A - Production of thin film of ferroelectric single crystal - Google Patents
Production of thin film of ferroelectric single crystalInfo
- Publication number
- JPS645999A JPS645999A JP16216587A JP16216587A JPS645999A JP S645999 A JPS645999 A JP S645999A JP 16216587 A JP16216587 A JP 16216587A JP 16216587 A JP16216587 A JP 16216587A JP S645999 A JPS645999 A JP S645999A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- lithium niobate
- plate
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To easily form a single crystal and to obtain the title thin film of a ferroelectric single crystal by depositing a thin single crystal film on a substrate substance through the thin film of an amorphous or polycrystal ferroelectric single crystal consisting of the same substance as the single crystal. CONSTITUTION:The thin film of an amorphous or polycrystal ferroelectric single crystal is deposited in specified thickness on the substrate substance. The thin film of a single crystal consisting of the same material as the above- mentioned thin film is deposited on the thin film while heating the single crystal. For example, a sapphire plate 1 is cleaned to obtain a clean surface, and amorphous lithium niobate is formed on the plate 1 in about 40-70mm thickness as a predeposited first layer 2 while keeping the plate 1 at a low temp. such as room temp. to mitigate the mismatching in the lattice constant between sapphire and lithium niobate. The sapphire plate 1 is then heated to about 500-600 deg.C, and a second layer 3 (thin single crystal film) of lithium niobate is formed. By this method, the thin film of a lithium niobate single crystal having good characteristics can be formed on the sapphire plate, etc., having the lattice constant highly mismatched with that of the thin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16216587A JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16216587A JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS645999A true JPS645999A (en) | 1989-01-10 |
Family
ID=15749258
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16216587A Pending JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS645999A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
JPH08212830A (en) * | 1994-11-11 | 1996-08-20 | Fuji Xerox Co Ltd | Orienting ferroelectric thin film element and its manufacture |
JP2006195383A (en) * | 2005-01-17 | 2006-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator and its manufacturing method |
KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
JP2008069058A (en) * | 2006-09-15 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | LiNbO3 EPITAXIAL FILM DEPOSITION METHOD |
WO2021066156A1 (en) * | 2019-10-04 | 2021-04-08 | 株式会社Flosfia | Crystalline laminate structure and semiconductor device |
WO2024075690A1 (en) * | 2022-10-05 | 2024-04-11 | 株式会社シンクロン | Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof |
-
1987
- 1987-06-29 JP JP16216587A patent/JPS645999A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
JPH08212830A (en) * | 1994-11-11 | 1996-08-20 | Fuji Xerox Co Ltd | Orienting ferroelectric thin film element and its manufacture |
KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
JP2006195383A (en) * | 2005-01-17 | 2006-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator and its manufacturing method |
JP2008069058A (en) * | 2006-09-15 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | LiNbO3 EPITAXIAL FILM DEPOSITION METHOD |
WO2021066156A1 (en) * | 2019-10-04 | 2021-04-08 | 株式会社Flosfia | Crystalline laminate structure and semiconductor device |
WO2024075690A1 (en) * | 2022-10-05 | 2024-04-11 | 株式会社シンクロン | Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0191505A3 (en) | Method of producing sheets of crystalline material | |
ES483941A1 (en) | Semiconductor processing | |
EP0309294A3 (en) | Method and apparatus for the manufacture of superconducting oxide materials | |
JPS5631213A (en) | Surface elastic wave element | |
JPS645999A (en) | Production of thin film of ferroelectric single crystal | |
EP1179861A3 (en) | Piezoelectric element and process for producing the same | |
CA2037795A1 (en) | Process for Preparing High-Temperature Superconducting Thin Films | |
US4073675A (en) | Waveguiding epitaxial LiNbO3 films | |
JPS575328A (en) | Growing method for semiconductor crystal | |
FR2667437B1 (en) | PROCESS FOR THE PREPARATION BY RAPID ANNEALING OF A THIN LAYER OF CRYSTALLIZED MATERIAL OF THE OXIDE TYPE AND SUBSTRATE COATED WITH A THIN LAYER OBTAINED BY THIS PROCESS. | |
JPS5710224A (en) | Forming method for silicone single crystalline film | |
JPS54143780A (en) | Manufacture of semiconductor sputtering target | |
GB1080029A (en) | Improvements in and relating to piezoelectric devices | |
JPS5336182A (en) | Thin semiconductor single crystal film forming insulation substrate | |
Igras et al. | The Growth of CdxHg 1-x< cc Te Layers on Oxidized Silicon Substrates | |
JPS6482611A (en) | Crystal growth method | |
JPS6477118A (en) | Manufacture of ga1-xalxas epitaxial wafer | |
JPS6427222A (en) | Manufacture of thin single crystalline film | |
JPS54162688A (en) | Forming method for oxide single crystal thin film | |
CA2045890A1 (en) | Process for Preparing Thin Film of Oxide Superconductor | |
JPS6442117A (en) | Crystal growth method | |
JPS6457591A (en) | Formation of ferroelectric thin film | |
JPS6421054A (en) | Film forming method | |
Pariset et al. | Electrical Conductivity of Thin Bismuth Films; Application to the Study of Epitaxy | |
JPS57121220A (en) | Semiconductor device and manufacture thereof |