JPS6442117A - Crystal growth method - Google Patents

Abstract

PURPOSE:To obtain a single crystal which makes the three-dimensional integration and a large area easy and which can be applied to a device easily and practically by a method wherein a material to be used as a seed is heat-treated, melted and solidified to form a seed single crystal whose plane orientation has been controlled and the single crystal is grown by using the seed single crystal as the seed. CONSTITUTION:An amorphous silicon film 2 is deposited on a quartz glass substrate 1 by using a low-pressure CVD method; then, the amorphous silicon film 2 is patterned to be spot-like by a photolithographic process. Then, while the substrate 1 is being shifted, a laser beam is scanned and irradiated; an amorphous silicon film 3 is melted and solidified; it is transformed into a silicon single-crystal fine particle 4. If a crystal is grown by using the silicon single- crystal fine particle 4 as a seed, it becomes large single-crystal silicon 5. Because the plane orientation of the single-crystal fine particle used as the seed is uniform, an irregularity of a characteristic of a single device is small; by this setup, it is possible to easily obtain a single crystal which makes the three- dimensional intergration and a large area easy and which can be applied to a device easily and practically.