JPH0359014A - Epitaxial growth of diacetylene or polydiacetylene - Google Patents
Epitaxial growth of diacetylene or polydiacetyleneInfo
- Publication number
- JPH0359014A JPH0359014A JP19436189A JP19436189A JPH0359014A JP H0359014 A JPH0359014 A JP H0359014A JP 19436189 A JP19436189 A JP 19436189A JP 19436189 A JP19436189 A JP 19436189A JP H0359014 A JPH0359014 A JP H0359014A
- Authority
- JP
- Japan
- Prior art keywords
- diacetylene
- substrate
- polydiacetylene
- epitaxial growth
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229920000015 polydiacetylene Polymers 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000013078 crystal Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 11
- 239000010408 film Substances 0.000 abstract description 7
- 238000001451 molecular beam epitaxy Methods 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔（既 要］
ジアセチレン又はポリジアセチレンのエピタキシャル成
長法に関し、
ミリオーダー以上の大面積にわたって、ジアセチレン又
はポリジアセチレンをエピタキシャル成長させることを
目的とし、
基板としてジアセチレン単結晶又はポリジアセチレン単
結晶を用いてジアセチレン又はポリジアセチレンをエピ
タキシャル成長させるように構成する。[Detailed Description of the Invention] [(Required) A method for epitaxial growth of diacetylene or polydiacetylene, which aims to epitaxially grow diacetylene or polydiacetylene over a large area of millimeter order or more, and uses a diacetylene single crystal or a substrate as a substrate. The present invention is configured to epitaxially grow diacetylene or polydiacetylene using a polydiacetylene single crystal.
本発明は、ジアセチレン又はポリジアセチレンのエピタ
キシャル成長法に関する。本発明に従ってエピタキシャ
ル成長させたジアセチレン又はポリジアセチレンは、例
えば光回路素子などとして有用である。The present invention relates to a method for epitaxial growth of diacetylene or polydiacetylene. Diacetylene or polydiacetylene epitaxially grown according to the present invention is useful, for example, as an optical circuit element.
従来、有機分子線エピタキシー（ＭＥＢ）法などを用い
てジアセチレンやポリジアセチレン薄膜の作製が行われ
ている。しかしながら、このようにして得られたジアセ
チレンやポリジアセチレンの薄膜はミクロンオーダーの
粒子からなる多結晶質であるため、例えば光導波時に散
乱して導波路として有効でなかった。また、基板のラビ
ング処理によって配向性の高い膜を得る試みもあるが、
この場合にも基板と水平方向の配向に限られ、また得ら
れた膜の平滑性も十分でないという問題があった。Conventionally, diacetylene or polydiacetylene thin films have been produced using organic molecular beam epitaxy (MEB) or the like. However, the thin films of diacetylene and polydiacetylene thus obtained are polycrystalline and consist of particles on the order of microns, and therefore are not effective as waveguides due to scattering during optical waveguide, for example. There are also attempts to obtain highly oriented films by rubbing the substrate.
In this case as well, there were problems in that the orientation was limited to the horizontal direction with respect to the substrate, and the resulting film did not have sufficient smoothness.
〔発明が解決しようとする課題］
従って、本発明は、前記した従来技４＋ｉの問題点を解
決し、ミリオーダー以上の大面積にわたって、ジアセチ
レン（ＤＡ）又はポリジアセチレン（ＰＤＡ）をエピタ
キシャル成長させることを目的とする。[Problems to be Solved by the Invention] Therefore, the present invention solves the problems of the conventional technique 4+i described above, and epitaxially grows diacetylene (DA) or polydiacetylene (PDA) over a large area of millimeter order or more. With the goal.
本発明に従えば、基板上にジアセチレン又はポリジアセ
チレンをエピタキシャル成長させるにあたり、基板とし
てジアセチレン単結晶又はポリジアセチレン単結晶を用
いてジアセチレン又はポリジアセチレンをエピタキシャ
ル成長させる。According to the present invention, in epitaxially growing diacetylene or polydiacetylene on a substrate, diacetylene or polydiacetylene is epitaxially grown using a diacetylene single crystal or polydiacetylene single crystal as the substrate.
〔作用］
本発明に従えば、ジアセチレン又はポリジアセチレンを
エピタキシャル成長させる際に、基板としてジアセチレ
ン又はポリジアセチレンの単結晶を用いることによって
基板上にミリオーダー以上の大面積のジアセチレン又は
ポリジアセチレンの薄膜を効果的に成長させることがで
きる。[Function] According to the present invention, when diacetylene or polydiacetylene is epitaxially grown, a single crystal of diacetylene or polydiacetylene is used as a substrate, and thereby a large area of diacetylene or polydiacetylene on the order of millimeter or more is grown on the substrate. Thin films can be grown effectively.
〔実施例］
第１図は、基板としてＤＡ又はＰＤＡの薄膜単結晶を用
いた例である。基板のＤＡ又はＰＤＡ薄膜単結晶は、例
えば溶媒蒸発法、シェアー法などで形成する。[Example] FIG. 1 is an example in which a thin film single crystal of DA or PDA is used as the substrate. The DA or PDA thin film single crystal of the substrate is formed, for example, by a solvent evaporation method, a shear method, or the like.
即ち、第１図において、有機薄膜装置は、例えば基板ホ
ルダー２、Ｋ−セル３及び光照射用窓４を備えた容器又
は真空ペルジャー１より成り、本発明に従って、基板上
に所望のＤＡ又はＰＤＡの膜をエピタキシャル成長させ
るに際しては基板ホルダー２上に、例えば石英基板５を
支承し、これにＤＡ又はＰＤＡの単結晶薄膜５゛を基板
として適当な方法で石英基板２上に成長させ、Ｋ−セル
３内にＤＡモノマー６を収容し、その際、光照射用窓４
より光を基板５に照射してエピタキシャル成長させても
よい。That is, in FIG. 1, the organic thin film device comprises, for example, a container or vacuum pelger 1 equipped with a substrate holder 2, a K-cell 3, and a window 4 for light irradiation, and according to the present invention, a desired DA or PDA is deposited on the substrate. When epitaxially growing a film, for example, a quartz substrate 5 is supported on the substrate holder 2, and a single crystal thin film 5 of DA or PDA is grown on the quartz substrate 2 by an appropriate method as a substrate. The DA monomer 6 is housed in the light irradiation window 4.
The substrate 5 may be irradiated with more light to cause epitaxial growth.
例えば、下記式（Ｉ）で表わされるＤＡＲ−ＣミＣ−Ｃ
ミＣ−Ｒ（１）
１ｍｍＸ１ｍｍより大面積の薄膜単結晶が得られる。For example, DAR-C-C-C represented by the following formula (I)
Mi-C-R (1) A thin film single crystal with an area larger than 1 mm x 1 mm can be obtained.
本発明に従って、これを基板としてエピタキシャル成長
させると、有機ＭＢＥ法によりｌｍＸｌｎｍより大面積
のＤＡ又はＰＤＡの薄膜をエピタキシャル成長させるこ
とができる。このエピタキシャル成長は、例えば１０−
”Ｔｏｒｒの真空度において１〜１０人／分の成長速度
で行なうことができる。この際基板５は、ポリマー化し
てもしなくてもよいが、基板５を予めポリマー化すると
、基板の機械的及び化学的安定性が向上し、エピタキシ
ャル成長が良好に行えるようになる。エピタキシャル成
長させる材料としては、基板５の材料と同一であっても
、異なっていてもよい。例えば単独では良質結晶ができ
にくいジアセチレンである式：％式％
のエピタキシャル成長や、その他各種ジアセチレンやポ
リジアセチレンをエピタキシャル成長させることができ
る。また、更に複数のに一セルから異なるモノマーを導
入するなどして、複数種類の材料からなる混晶エピタキ
シャル成長を成長させたり、ポリマー超格子を形成する
こともできる。According to the present invention, when epitaxial growth is performed using this as a substrate, a thin film of DA or PDA having an area larger than 1mXlnm can be epitaxially grown using the organic MBE method. This epitaxial growth, for example,
It can be carried out at a growth rate of 1 to 10 people/min in a vacuum of Torr. At this time, the substrate 5 may or may not be polymerized, but if the substrate 5 is polymerized in advance, the mechanical and The chemical stability is improved and epitaxial growth can be performed well.The material for epitaxial growth may be the same as or different from the material of the substrate 5.For example, diacetylene, which alone cannot produce high-quality crystals, can be used for epitaxial growth. It is possible to epitaxially grow the formula: %formula%, or to epitaxially grow various other diacetylenes and polydiacetylenes.Also, by introducing different monomers from one cell into multiple cells, it is possible to grow mixtures made of multiple types of materials. It is also possible to grow crystalline epitaxial growth or form polymer superlattices.
また基板結晶５の配向性をコントロールすることにより
、エピタキシャル成長膜７の配向性をコントロールする
ことができる。Furthermore, by controlling the orientation of the substrate crystal 5, the orientation of the epitaxially grown film 7 can be controlled.
第２図は、基板５にバルク単結晶を用いた場合であり、
第１図の場合と同様にエピタキシャル成長させることが
できる。FIG. 2 shows a case where a bulk single crystal is used for the substrate 5,
Epitaxial growth can be performed in the same manner as in the case of FIG.
有機ＭＢＥ法を用いるに際し、第１図及び第２図の態様
では光を照射しているが、更に電場によリモノマーを配
向させて行なうこともできる。When using the organic MBE method, although light is irradiated in the embodiments shown in FIGS. 1 and 2, it is also possible to further orient the monomer using an electric field.
また、有機ＭＢＥ法のみならず、溶液中デポジション法
などの他の公知方法によることもできる。In addition to the organic MBE method, other known methods such as an in-solution deposition method can also be used.
本発明に従えば、以上のような方法により、大面積のエ
ピタキシャル膜の成長がジアセチレン又はポリジアセチ
レンを用いて可能となる。According to the present invention, by the method described above, it is possible to grow a large-area epitaxial film using diacetylene or polydiacetylene.
【図面の簡単な説明】
第１図は本発明に従ってＤＡ又はＰＤＡをエピタキシャ
ル成長させるのに使用する装置の一例を示す図面であり
、第２図は本発明に従ってＤＡ又はＰＤＡをエピタキシ
ャル成長させるのに使用する装置の他の例を示す図面で
ある。
・・・容器又は真空ペルジャー
・・・基板ホルダー
・・・Ｋ−セル
・・・光照射用窓
・・・基牟反
・・・モノマー
・・・ＤＡ又はＰＤＡのエピタキ
シャル成長膜BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a drawing showing an example of an apparatus used to epitaxially grow DA or PDA according to the present invention, and FIG. 2 is a diagram showing an example of an apparatus used to epitaxially grow DA or PDA according to the present invention. It is a drawing which shows another example of an apparatus. ... Container or vacuum pell jar ... Substrate holder ... K-cell ... Window for light irradiation ... Base material ... Monomer ... Epitaxially grown film of DA or PDA
Claims (1)
タキシャル成長させるにあたり、基板としてジアセチレ
ン又はポリジアセチレンの単結晶を用いることを特徴と
するジアセチレン又はポリジアセチレンのエピタキシャ
ル成長法。1. A method for epitaxial growth of diacetylene or polydiacetylene, which is characterized in that a single crystal of diacetylene or polydiacetylene is used as a substrate in epitaxially growing diacetylene or polydiacetylene on a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19436189A JP2848403B2 (en) | 1989-07-28 | 1989-07-28 | Epitaxial growth of diacetylene or polydiacetylene |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19436189A JP2848403B2 (en) | 1989-07-28 | 1989-07-28 | Epitaxial growth of diacetylene or polydiacetylene |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0359014A true JPH0359014A (en) | 1991-03-14 |
| JP2848403B2 JP2848403B2 (en) | 1999-01-20 |
Family
ID=16323302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19436189A Expired - Lifetime JP2848403B2 (en) | 1989-07-28 | 1989-07-28 | Epitaxial growth of diacetylene or polydiacetylene |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2848403B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105778142A (en) * | 2016-02-22 | 2016-07-20 | 中国科学技术大学 | Preparation method for purpurine modified polydiacetylene microtube and optical waveguide device and preparation method thereof |
-
1989
- 1989-07-28 JP JP19436189A patent/JP2848403B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105778142A (en) * | 2016-02-22 | 2016-07-20 | 中国科学技术大学 | Preparation method for purpurine modified polydiacetylene microtube and optical waveguide device and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2848403B2 (en) | 1999-01-20 |
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