JPH0352434B2 - - Google Patents
Info
- Publication number
- JPH0352434B2 JPH0352434B2 JP23164185A JP23164185A JPH0352434B2 JP H0352434 B2 JPH0352434 B2 JP H0352434B2 JP 23164185 A JP23164185 A JP 23164185A JP 23164185 A JP23164185 A JP 23164185A JP H0352434 B2 JPH0352434 B2 JP H0352434B2
- Authority
- JP
- Japan
- Prior art keywords
- cell
- shutter
- raw material
- beam epitaxy
- molecular beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002994 raw material Substances 0.000 claims description 16
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 description 11
- 230000007547 defect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は欠陥の少ない結晶を成長可能とする分
子線エピタキシー装置に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a molecular beam epitaxy apparatus that is capable of growing crystals with fewer defects.
（従来の技術）
半導体の成長法として分子線エピタキシー
（MBE）法が注目されている。分子線エピタキシ
ー法は、超高真空中で原料分子あるいは原子を加
熱した基板に向けて照射し、結晶成長させる方法
である。従来のMBE装置は第２図に示すように
原料２を入れたるつぼ１の前部にセルシヤツター
３が設けられており、結晶成長はシヤツター３を
開いて原料の分子線を放射させて行なわれる。し
かるにシヤツター３は第２図に示す様な平担な板
を用いている。るつぼ１から放射される原料分子
あるいは原子４はシヤツター３に遮断されるため
シヤツター３上に、付着原料５が形成されてい
る。(Prior Art) Molecular beam epitaxy (MBE) is attracting attention as a semiconductor growth method. Molecular beam epitaxy is a method in which raw material molecules or atoms are irradiated toward a heated substrate in an ultra-high vacuum to grow crystals. As shown in FIG. 2, a conventional MBE apparatus is equipped with a cell shutter 3 in front of a crucible 1 containing a raw material 2, and crystal growth is performed by opening the shutter 3 and emitting molecular beams of the raw material. However, the shutter 3 uses a flat plate as shown in FIG. Raw material molecules or atoms 4 emitted from the crucible 1 are blocked by the shutter 3, so that a deposited raw material 5 is formed on the shutter 3.
（発明が解決しようとする問題点）
実際のMBE装置は第３図に示すように複数の
セルから構成され各セル８はほぼ基板７を中心と
した球面状のチヤンバー壁面９に並べられてい
る。結晶成長は急激なセルシヤツターの開閉で行
なわれるためセルシヤツター３に付着した付着原
料５が軌跡６で示す方向に飛び他の原料セルのる
つぼ１内に飛び込み原料の純度が低下し成長した
結晶の欠陥を増加させる原因となつている。(Problems to be Solved by the Invention) As shown in FIG. 3, an actual MBE device is composed of a plurality of cells, and each cell 8 is arranged on a spherical chamber wall surface 9 centered on a substrate 7. . Since crystal growth is carried out by rapid opening and closing of the cell shutter, the attached raw material 5 attached to the cell shutter 3 flies in the direction shown by the trajectory 6 and enters the crucible 1 of another raw material cell, reducing the purity of the raw material and causing defects in the grown crystal. This is the cause of the increase.
本発明の目的は、この問題を解決し、欠陥の少
ない結晶を成長することができる分子線エピタキ
シー装置を提供することにある。 An object of the present invention is to provide a molecular beam epitaxy apparatus that can solve this problem and grow crystals with fewer defects.
（問題を解決するための手段）
本発明の分子線エピタキシー装置は、セルシヤ
ツターにセルに対向する方向に伸びる折り返し部
を設けたことを特徴とする。(Means for Solving the Problems) The molecular beam epitaxy apparatus of the present invention is characterized in that the cell shutter is provided with a folded portion extending in a direction facing the cell.
（作用）
セルシヤツター形状がセルに対応する面に対し
析り返しがあることによりセルシヤツターに付着
した付着原料がシヤツターの開閉時に飛ぶことを
防ぎそれにより成長した結晶の欠陥を従来の分子
線エピタキシー装置のものと比べ減少させること
ができる。(Function) The shape of the cell shutter has a reversal with respect to the surface corresponding to the cell, which prevents the adhering material attached to the cell shutter from flying away when the shutter is opened and closed, thereby preventing defects in the grown crystal from being removed by conventional molecular beam epitaxy equipment. It can be reduced compared to the
（実施例）
以下本発明について図面を参照して詳細に説明
する。第１図は本発明の一実施例を示す図であ
る。セルシヤツター３には平板の周囲に折り返し
部１１を設けてある。かかる構成をとることによ
りシヤツター３を開閉する際、付着原料５が飛ぶ
ことを折り返し部１１が止め他のるつぼ内に付着
原料が混入することを防ぐことができる。(Example) The present invention will be described in detail below with reference to the drawings. FIG. 1 is a diagram showing an embodiment of the present invention. The cell shutter 3 is provided with a folded portion 11 around the flat plate. By adopting such a configuration, when the shutter 3 is opened and closed, the folded part 11 can stop the adhering raw material 5 from flying away, thereby preventing the adhering raw material from being mixed into other crucibles.
本発明によるセルシヤツターを用いた場合と従
来のセルシヤツターを用いた場合において、
GaAs基板上にGaAsを成長し結晶欠陥を比較し
た。GaAs成長速度は約1.0μmとしセル・るつぼ
は同一のものを用いた。その結果、従来のセルシ
ヤツターを用いた場合は１cm2当り約1000個程度の
結晶欠陥密度であつたものが、本発明のセルシヤ
ツターを用いた場合は１cm2当り約600個程度の結
晶欠陥密度に低減できた。 When using the cell shutter according to the present invention and when using the conventional cell shutter,
GaAs was grown on a GaAs substrate and crystal defects were compared. The GaAs growth rate was approximately 1.0 μm, and the same cell and crucible were used. As a result, when using the conventional cell shutter, the crystal defect density was approximately 1000 per cm 2 , but when using the cell shutter of the present invention, the crystal defect density was reduced to approximately 600 per 1 cm 2 . did it.
（発明の効果）
以上詳細に説明したように、本発明によればセ
ルシヤツターに付着した付着原料が飛ぶことを防
ぎそれに伴い成長した結晶の欠陥を低減すること
の可能な分子線エピタキシー装置が得られる。(Effects of the Invention) As described above in detail, according to the present invention, a molecular beam epitaxy apparatus is obtained that can prevent the adhering raw material attached to the cell shutter from flying off and thereby reduce defects in the grown crystal. .
第１図は本発明の一実施例を示すセルシヤツタ
ー近傍の模式図、第２図は従来の分子線エピタキ
シー装置のセルシヤツター近傍の模式図、第３図
は従来の分子線エピタキシー装置の模式図であ
る。
１……るつぼ、２……原料、３……セルシヤツ
ター、４……原料分子あるいは原子、５……付着
原料、６……付着原料の飛ぶ軌跡、７……基板、
８……セル、９……チヤンバ壁面、１１……折り
返し部。
FIG. 1 is a schematic diagram of the vicinity of a cell shutter showing an embodiment of the present invention, FIG. 2 is a schematic diagram of the vicinity of a cell shutter of a conventional molecular beam epitaxy apparatus, and FIG. 3 is a schematic diagram of a conventional molecular beam epitaxy apparatus. . 1... Crucible, 2... Raw material, 3... Cell shutter, 4... Raw material molecules or atoms, 5... Adhering raw material, 6... Trajectory of the adhering raw material, 7... Substrate,
8...Cell, 9...Chamber wall surface, 11...Turning part.
Claims (1)
してそれぞれセルシヤツターを有する分子線エピ
タキシー装置において、前記セルシヤツターはセ
ルの方向に伸びる折り返し部を備えていることを
特徴とする分子線エピタキシー装置。1. A molecular beam epitaxy apparatus having cell shutters in close proximity to the front surfaces of a plurality of cells loaded with raw materials, each of which has a folded portion extending in the direction of the cells.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23164185A JPS6291492A (en) | 1985-10-16 | 1985-10-16 | Molecular beam epitaxy device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23164185A JPS6291492A (en) | 1985-10-16 | 1985-10-16 | Molecular beam epitaxy device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6291492A JPS6291492A (en) | 1987-04-25 |
| JPH0352434B2 true JPH0352434B2 (en) | 1991-08-09 |
Family
ID=16926679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23164185A Granted JPS6291492A (en) | 1985-10-16 | 1985-10-16 | Molecular beam epitaxy device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6291492A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH2193H1 (en) * | 2001-01-30 | 2007-07-03 | The United States Of America As Represented By The Secretary Of The Air Force | Method of growing homoepitaxial silicon carbide |
-
1985
- 1985-10-16 JP JP23164185A patent/JPS6291492A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6291492A (en) | 1987-04-25 |
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