JPH0238442Y2 - - Google Patents
Info
- Publication number
- JPH0238442Y2 JPH0238442Y2 JP14240284U JP14240284U JPH0238442Y2 JP H0238442 Y2 JPH0238442 Y2 JP H0238442Y2 JP 14240284 U JP14240284 U JP 14240284U JP 14240284 U JP14240284 U JP 14240284U JP H0238442 Y2 JPH0238442 Y2 JP H0238442Y2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- groove
- substrate holder
- metal wire
- holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 46
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【考案の詳細な説明】
(イ) 産業上の利用分野
本考案は分子線エピタキシヤル（MBE）成長
装置に関する。[Detailed description of the invention] (a) Industrial application field The present invention relates to a molecular beam epitaxial (MBE) growth apparatus.
(ロ) 従来の技術
現在、分子線エピタキシヤル（MBE）法は結
晶性の良好性、不純物濃度の制御の容易性、膜厚
制御の容易性等からGaAs（ガリウム砒素）をは
じめとする−化合物半導体の成長、および従
来の気相、液相等の成長方法では成長が困難であ
つたZnSe（ジンクセレン）等の−化合物半導
体の成長に用いられている。(b) Conventional technology At present, the molecular beam epitaxial (MBE) method is applied to compounds such as GaAs (gallium arsenide) due to its good crystallinity, ease of controlling impurity concentration, and ease of controlling film thickness. It is used for the growth of semiconductors and -compound semiconductors such as ZnSe (zinc selenium), which are difficult to grow using conventional vapor phase or liquid phase growth methods.
第１図は特願昭57−225732号に記載された
MBE装置を原理的に示したものである。バツク
グランド真空度10-10Torr以下に排気した真空容
器内に、基板部１と第１〜第３セル２ａ〜２ｃと
が対向配置されこれらの間に主シヤツタ３と個別
シヤツタ４ａ〜４ｃが介在されている。 Figure 1 was described in Japanese Patent Application No. 57-225732.
This shows the principle of the MBE device. In a vacuum container evacuated to a background vacuum level of 10 -10 Torr or less, the substrate section 1 and the first to third cells 2a to 2c are arranged facing each other, with the main shutter 3 and individual shutters 4a to 4c interposed between them. has been done.
基板部１はヒータ機構を備えた基板ホルダ５
と、その上にIn（インジウム）メタル６により貼
着された例えばGaAs基板７とからなる。第１〜
第３セル２ａ〜２ｃは、例えば夫々るつぼ８ａ〜
８ｃ内にZn、Se、Gaを個別に収納しており、そ
の周囲にるつぼ加熱用ヒータ９を有し、又各るつ
ぼ温度検出用熱電対１０を備えている。 The substrate part 1 is a substrate holder 5 equipped with a heater mechanism.
and, for example, a GaAs substrate 7 adhered thereon with an In (indium) metal 6. 1st~
The third cells 2a to 2c are, for example, crucibles 8a to 8a, respectively.
Zn, Se, and Ga are individually housed in the chamber 8c, and a heater 9 for heating the crucible is provided around the crucible, and a thermocouple 10 for detecting the temperature of each crucible is provided.
上記MBE装置自体では、基板７や各セルの温
度を制御すると共に、各シヤツタ４ａ〜４ｃを適
宜開閉することにより、GaAs基板７上にZnSe単
結晶薄膜が成長する。 In the MBE apparatus itself, a ZnSe single crystal thin film is grown on the GaAs substrate 7 by controlling the temperature of the substrate 7 and each cell and opening and closing each shutter 4a to 4c as appropriate.
(ハ) 考案が解決しようとする問題点
このような装置では基板７と基板ホルダ５とを
In６等で貼着しているため、基板７を基板ホルダ
５から分離するには基板７及び基板ホルダ５全体
をInの融点以上に昇温して基板７と基板ホルダ５
との間に例えばカミソリ等の薄い金属板を挿入す
る等の方法で行なつていた。然るに斯る方法では
挿入された金属板の端部が基板７に当接し損傷を
与えたり、不所望に上記金属板が基板７表面に接
触して斯る基板７を汚染するという問題があつ
た。(c) Problems to be solved by the invention In such a device, the substrate 7 and the substrate holder 5 are
Since the substrate 7 is attached with In6 or the like, in order to separate the substrate 7 from the substrate holder 5, the entire temperature of the substrate 7 and substrate holder 5 must be raised to above the melting point of In.
This was done by inserting a thin metal plate, such as a razor, between the two. However, in such a method, the end of the inserted metal plate comes into contact with the substrate 7 and causes damage, or the metal plate undesirably contacts the surface of the substrate 7 and contaminates the substrate 7. .
(ニ) 問題点を解決するための手段
本考案は斯る点に鑑みてなされたもので、その
構成的特徴は基板ホルダの基板を固着する一主面
に溝を形成すると共に該溝内に着脱自在に金属線
を挿入したことにある。(d) Means for solving the problems The present invention has been made in view of the above points, and its structural features include forming a groove on one main surface of the substrate holder to which the substrate is fixed, and forming a groove in the groove. The reason is that a metal wire is inserted in a removable manner.
(ホ) 作用
この構成の基板ホルダから基板を分離させるに
はIn等の固着材を溶融させた状態で金属線の一端
を上方へ持ち上げることにより基板全体に力が加
わることになり、基板ホルダから基板を分離でき
る。(E) Effect To separate the substrate from the substrate holder with this configuration, by lifting one end of the metal wire upwards while melting the adhesive such as In, force is applied to the entire substrate, and the substrate holder is separated from the substrate holder. The substrate can be separated.
(ヘ) 実施例
第２図ａ及びｂは本考案の一実施例における基
板ホルダ１１を示す平面図及びａの−線断面
図であり、第３図は本考案の一実施例における金
属線１２の平面図である。(f) Embodiment FIGS. 2a and 2b are a plan view showing the substrate holder 11 in an embodiment of the present invention, and a cross-sectional view taken along the line "a" in FIG. 3, and FIG. FIG.
具体的には上記基板ホルダ１１は例えばモリブ
デンからなり第２図ａに示す如くその基板固着面
には略王字状に溝１３が形成され、その一端は幅
広部１４となつている。また、上記金属線１２は
上記ホルダと同様にモリブデンからなり、その形
状は上記溝１３の形状と同一の王字状をなす。 Specifically, the substrate holder 11 is made of, for example, molybdenum, and as shown in FIG. 2A, a substantially square-shaped groove 13 is formed on its substrate fixing surface, and one end of the groove 13 is a wide portion 14. Further, the metal wire 12 is made of molybdenum like the holder, and its shape is the same as the shape of the groove 13.
更に上記金属線１２は上記溝１３に着脱自在に
挿入されかつ第４図に示す如く、その挿入状態に
おいてその表面が溝１３上部に突出しないように
する必要があり、従つて例えば金属線１２の直径
が１mmであるとき上記溝１３の巾及び深さは１mm
以上としまた上記幅広部１４の幅は例えばピンセ
ツト等で上記挿入された金属線１２をつまめる程
度の広さとする。 Furthermore, the metal wire 12 is inserted into the groove 13 in a removable manner, and as shown in FIG. When the diameter is 1 mm, the width and depth of the groove 13 are 1 mm.
In addition, the width of the wide portion 14 is set to be wide enough to pinch the inserted metal wire 12 with, for example, tweezers.
斯る基板ホルダ１１及び金属線１２を用いた装
置を用いた際の基板の固着は上記金属線１２を上
記基板ホルダ１１の溝１３内に挿入した状態で少
なくとも上記幅広部１４が露出した状態で基板を
基板ホルダ１１の固着面にIn等で固着する。ま
た、基板を基板ホルダ１１より分離する際には第
５図に示す如く上記幅広部１４に位置する金属線
１２を力点として図中矢印方向に持ち上げること
により、基板１５は一端を支えとして上方へ浮き
上がることとなり分離できる。 When a device using such a substrate holder 11 and metal wire 12 is used, the substrate is fixed when the metal wire 12 is inserted into the groove 13 of the substrate holder 11 and at least the wide portion 14 is exposed. The substrate is fixed to the fixed surface of the substrate holder 11 using In or the like. Further, when separating the substrate from the substrate holder 11, as shown in FIG. 5, by lifting the metal wire 12 located in the wide portion 14 in the direction of the arrow in the figure as a point of force, the substrate 15 is lifted upward using one end as a support. It will float and can be separated.
尚、本実施例では上記溝１３の形状を王字状と
したが、本考案はこれに限定されるものではな
く、らせん状や網目状であつても良い。 In this embodiment, the shape of the groove 13 is a square shape, but the present invention is not limited to this, and the groove 13 may have a spiral shape or a mesh shape.
(ト) 考案の効果
本考案の分子線エピタキシヤル装置では基板を
基板ホルダから分離するに際して、予め基板直下
に配された金属線を上方に持ち上げるだけで良い
ので、基板に損傷や汚染を与えることなく簡単に
分離が行える。(g) Effects of the invention In the molecular beam epitaxial apparatus of the invention, when separating the substrate from the substrate holder, it is only necessary to lift the metal wire placed immediately below the substrate in advance, so there is no possibility of damaging or contaminating the substrate. Separation can be easily performed without any problems.
第１図は従来例を示す模式図、第２図乃至第５
図は本考案の一実施例を示し、第２図ａ及び第３
図は平面図、第２図ｂは断面図、第４図は要部拡
大断面図、第５図は斜視図である。
１１……基板ホルダ、１２……金属線、１３…
…溝、１５……基板。
Figure 1 is a schematic diagram showing a conventional example, Figures 2 to 5
The figures show one embodiment of the present invention, and Figures 2a and 3
The figure is a plan view, FIG. 2b is a sectional view, FIG. 4 is an enlarged sectional view of a main part, and FIG. 5 is a perspective view. 11...Substrate holder, 12...Metal wire, 13...
...Groove, 15...Substrate.
Claims (1)
用いて結晶を成長せしめるための装置であつて、
上記基板ホルダの上記基板を固着する一主面には
溝が形成されると共に該溝内には着脱自在に金属
線が挿入されていることを特徴とする分子線エピ
タキシヤル成長装置。 An apparatus for fixing a substrate to a substrate holder and growing a crystal on the substrate using a molecular beam,
A molecular beam epitaxial growth apparatus characterized in that a groove is formed in one main surface of the substrate holder to which the substrate is fixed, and a metal wire is detachably inserted into the groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14240284U JPH0238442Y2 (en) | 1984-09-20 | 1984-09-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14240284U JPH0238442Y2 (en) | 1984-09-20 | 1984-09-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6157515U JPS6157515U (en) | 1986-04-17 |
| JPH0238442Y2 true JPH0238442Y2 (en) | 1990-10-17 |
Family
ID=30700724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14240284U Expired JPH0238442Y2 (en) | 1984-09-20 | 1984-09-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0238442Y2 (en) |
-
1984
- 1984-09-20 JP JP14240284U patent/JPH0238442Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6157515U (en) | 1986-04-17 |
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