JPS54162688A - Forming method for oxide single crystal thin film - Google Patents

Forming method for oxide single crystal thin film

Info

Publication number
JPS54162688A
JPS54162688A JP7171178A JP7171178A JPS54162688A JP S54162688 A JPS54162688 A JP S54162688A JP 7171178 A JP7171178 A JP 7171178A JP 7171178 A JP7171178 A JP 7171178A JP S54162688 A JPS54162688 A JP S54162688A
Authority
JP
Japan
Prior art keywords
single crystal
thin film
crystal thin
oxide single
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7171178A
Other languages
Japanese (ja)
Inventor
Akira Kawabata
Tadashi Shiozaki
Shinzo Onishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7171178A priority Critical patent/JPS54162688A/en
Publication of JPS54162688A publication Critical patent/JPS54162688A/en
Pending legal-status Critical Current

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Landscapes

  • Optical Integrated Circuits (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Waveguides (AREA)

Abstract

PURPOSE:To form a high quality oxide single crystal thin film having a good closely adhesive property with substrate, superior in crystallizing property and having a flat surface, by forming the oxide single crystal thin film by sputtering on one main face of single crystal substrate and moreover, growing the same oxide single crystal thin film on the above film in gas phase. CONSTITUTION:The first ZnO layer 2 having about 200-2000Angstrom in thickness, is formed on one surface of the sapphire single crystal substrate 1 mechanically ground the face in good flatness. Next, the ZnO layer 3 is formed only on the layer 2 by gas phase growth. Desired pattern light waveguide path having a high accuracy and good flatness, is able to make by carrying out the operation growing the single crystal growth film of the layer 3 up to desired film thickness. Also, by the above method, growing speed, crystallizing property and surface condition, are made good by laminating on sputtered sapphire board rather than directly laminating on sapphire board.
JP7171178A 1978-06-13 1978-06-13 Forming method for oxide single crystal thin film Pending JPS54162688A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7171178A JPS54162688A (en) 1978-06-13 1978-06-13 Forming method for oxide single crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7171178A JPS54162688A (en) 1978-06-13 1978-06-13 Forming method for oxide single crystal thin film

Publications (1)

Publication Number Publication Date
JPS54162688A true JPS54162688A (en) 1979-12-24

Family

ID=13468385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7171178A Pending JPS54162688A (en) 1978-06-13 1978-06-13 Forming method for oxide single crystal thin film

Country Status (1)

Country Link
JP (1) JPS54162688A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003302543A (en) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd Opto-electric circuit and opto-electric wiring board
US6664565B1 (en) 1999-08-31 2003-12-16 Stanley Electric Co., Ltd. ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
WO2004040662A1 (en) * 2002-10-31 2004-05-13 Shin-Etsu Handotai Co.,Ltd. Zn SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JAPANESE JOURNAL OF APPLIED PHYSICS=1978 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6664565B1 (en) 1999-08-31 2003-12-16 Stanley Electric Co., Ltd. ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal
JP2003302543A (en) * 2002-04-10 2003-10-24 Matsushita Electric Ind Co Ltd Opto-electric circuit and opto-electric wiring board
WO2004040662A1 (en) * 2002-10-31 2004-05-13 Shin-Etsu Handotai Co.,Ltd. Zn SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
US7157307B2 (en) 2002-10-31 2007-01-02 Shin-Etsu Handotai Co., Ltd. Zn-base semiconductor light-emitting device and method for manufacturing same
CN100407450C (en) * 2002-10-31 2008-07-30 信越半导体株式会社 Zn semiconductor light-emitting device and method for manufacturing same

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