JPS54162688A - Forming method for oxide single crystal thin film - Google Patents
Forming method for oxide single crystal thin filmInfo
- Publication number
- JPS54162688A JPS54162688A JP7171178A JP7171178A JPS54162688A JP S54162688 A JPS54162688 A JP S54162688A JP 7171178 A JP7171178 A JP 7171178A JP 7171178 A JP7171178 A JP 7171178A JP S54162688 A JPS54162688 A JP S54162688A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- crystal thin
- oxide single
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Integrated Circuits (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Waveguides (AREA)
Abstract
PURPOSE:To form a high quality oxide single crystal thin film having a good closely adhesive property with substrate, superior in crystallizing property and having a flat surface, by forming the oxide single crystal thin film by sputtering on one main face of single crystal substrate and moreover, growing the same oxide single crystal thin film on the above film in gas phase. CONSTITUTION:The first ZnO layer 2 having about 200-2000Angstrom in thickness, is formed on one surface of the sapphire single crystal substrate 1 mechanically ground the face in good flatness. Next, the ZnO layer 3 is formed only on the layer 2 by gas phase growth. Desired pattern light waveguide path having a high accuracy and good flatness, is able to make by carrying out the operation growing the single crystal growth film of the layer 3 up to desired film thickness. Also, by the above method, growing speed, crystallizing property and surface condition, are made good by laminating on sputtered sapphire board rather than directly laminating on sapphire board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7171178A JPS54162688A (en) | 1978-06-13 | 1978-06-13 | Forming method for oxide single crystal thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7171178A JPS54162688A (en) | 1978-06-13 | 1978-06-13 | Forming method for oxide single crystal thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54162688A true JPS54162688A (en) | 1979-12-24 |
Family
ID=13468385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7171178A Pending JPS54162688A (en) | 1978-06-13 | 1978-06-13 | Forming method for oxide single crystal thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54162688A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003302543A (en) * | 2002-04-10 | 2003-10-24 | Matsushita Electric Ind Co Ltd | Opto-electric circuit and opto-electric wiring board |
US6664565B1 (en) | 1999-08-31 | 2003-12-16 | Stanley Electric Co., Ltd. | ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
WO2004040662A1 (en) * | 2002-10-31 | 2004-05-13 | Shin-Etsu Handotai Co.,Ltd. | Zn SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
-
1978
- 1978-06-13 JP JP7171178A patent/JPS54162688A/en active Pending
Non-Patent Citations (1)
Title |
---|
JAPANESE JOURNAL OF APPLIED PHYSICS=1978 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6664565B1 (en) | 1999-08-31 | 2003-12-16 | Stanley Electric Co., Ltd. | ZnO crystal growth method, ZnO crystal structure, and semiconductor device using ZnO crystal |
JP2003302543A (en) * | 2002-04-10 | 2003-10-24 | Matsushita Electric Ind Co Ltd | Opto-electric circuit and opto-electric wiring board |
WO2004040662A1 (en) * | 2002-10-31 | 2004-05-13 | Shin-Etsu Handotai Co.,Ltd. | Zn SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
US7157307B2 (en) | 2002-10-31 | 2007-01-02 | Shin-Etsu Handotai Co., Ltd. | Zn-base semiconductor light-emitting device and method for manufacturing same |
CN100407450C (en) * | 2002-10-31 | 2008-07-30 | 信越半导体株式会社 | Zn semiconductor light-emitting device and method for manufacturing same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0191505A3 (en) | Method of producing sheets of crystalline material | |
JPS5340281A (en) | Photo mask material and manufacturtof it | |
GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
JPS54162688A (en) | Forming method for oxide single crystal thin film | |
JPS57161857A (en) | Photomask blank plate | |
JPS57167655A (en) | Manufacture of insulating isolation substrate | |
JPS57113411A (en) | Thin-film head | |
JPS55123176A (en) | Thin film solar cell | |
GB1338337A (en) | Cadmium sulphide thin film sustained conductivity device and method for making same | |
JPS645999A (en) | Production of thin film of ferroelectric single crystal | |
JPS60142576A (en) | Thin film solar battery substrate | |
JPS5315755A (en) | Manufacture of display panel electrode | |
JPS5659220A (en) | Production of liquid crystal display device | |
JPS575372A (en) | Thin film diode and manufacture thereof | |
JPS54143780A (en) | Manufacture of semiconductor sputtering target | |
JPS5645827A (en) | Forming method for transparent ferroelectric thin film | |
JPS57147634A (en) | Photomask blank | |
EP0217179A3 (en) | A method for laser crystallization of semiconductor islands on transparent substrates | |
CA2043541A1 (en) | Process for preparing high-temperature superconducting thin films | |
JPS56137684A (en) | Photoelectric transducing element | |
JPS56107323A (en) | Thin film head | |
CA2045890A1 (en) | Process for Preparing Thin Film of Oxide Superconductor | |
JPS6450315A (en) | Superconductor material | |
JPS5749922A (en) | Liquid crystal element | |
JPS55100295A (en) | Production of single crystal thin film |