JPS55154398A - Growing method and apparatus for liquid phase multi- layered membrane of semiconductor - Google Patents

Abstract

PURPOSE: To obtain an epitaxial growth layer comprising each layer with desired thickness by a method wherein, in case of carrying out the slide type continous liquid phase multi-layered membrane growth, plural solutions on which a source crystal is put is rendered to a saturated condition and, after a desired quantity thereof is withdrawn and cooled to a supersaturated condition, said desired quantity is contacted to a substrate plate.

CONSTITUTION: A substrate plate 24 is provided to a stationary portion 21 and solutions 25, 26 on which seed crystals 27, 28 are put are received in a permeating pore of a slider 22 as well as permeating pores 29, 30 are provided in a middle slider 23, in this condition (A). heated to a desired temp. within a heating furnace (not shown in the figure). By maintaining this temp. both solutions are rendered to a saturated condition and a solution 25 is introduced into a permeating pore 29 by moving a silder 22. Subsequently, a heating furnace is cooled at a constant speed and, at the same time, the solution within a permeating pore 29 is separated from a solution on which a seed crystal is put by moving a slider 22. If the temp. is reached to aer epitaxial growth initiating temp., sliders 23, 25 are simultaneously moved to contact the solution within a permeating pore 29. Because the soltuion is in a supersaturated condition by the super-cooling, an epitaxial crystal is grown on a substrate plate 24 and, moreover, a crystal layer is grown as the temp. lowering progresses.

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