JPS5673700A - Liquid phase epitaxially growing method - Google Patents

Liquid phase epitaxially growing method

Info

Publication number
JPS5673700A
JPS5673700A JP15169979A JP15169979A JPS5673700A JP S5673700 A JPS5673700 A JP S5673700A JP 15169979 A JP15169979 A JP 15169979A JP 15169979 A JP15169979 A JP 15169979A JP S5673700 A JPS5673700 A JP S5673700A
Authority
JP
Japan
Prior art keywords
layer
substrate
grown
melt
gaalas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15169979A
Other languages
Japanese (ja)
Other versions
JPS6026080B2 (en
Inventor
Kazuhisa Murata
Hiroshi Hayashi
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP15169979A priority Critical patent/JPS6026080B2/en
Publication of JPS5673700A publication Critical patent/JPS5673700A/en
Publication of JPS6026080B2 publication Critical patent/JPS6026080B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain an element with superior luminous characteristics in a high yield by growing a GaAlAs layer on a GaAs substrate kept at a constant temp. from a melt provided with a temp. gradient and continuously growing layers of different electrically conductive type in the same furnace while cooling the substrate.
CONSTITUTION: Boat 3 holding four melt reservoirs 4, 5, 6, 7 is slidably set on slider 2 with GaAs substrate 1 fixed, and heater 8 is attached to the 1st reservoir 4 to provide a temp. difference (5°C/min) to a melt in reservoir 4. Reservoirs 4W7 are filled with blended melts 10W13, respectively. By relatively moving slider 2 and boat 3, a GaAlAs layer is grown on substrate 1, and while cooling substrate 1 at a predetermined rate, the 2nd P type layer of GaAlAs of different electrically conductive type is continuously grown on the layer. The 3d P type layer and the 4th N or P type layer are then grown by contact for a predetermined time. Thus, superior epitaxial growth is enabled without causing a chip crack during manufacture.
COPYRIGHT: (C)1981,JPO&Japio
JP15169979A 1979-11-21 1979-11-21 Liquid phase epitaxial growth method Expired JPS6026080B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15169979A JPS6026080B2 (en) 1979-11-21 1979-11-21 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15169979A JPS6026080B2 (en) 1979-11-21 1979-11-21 Liquid phase epitaxial growth method

Publications (2)

Publication Number Publication Date
JPS5673700A true JPS5673700A (en) 1981-06-18
JPS6026080B2 JPS6026080B2 (en) 1985-06-21

Family

ID=15524323

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15169979A Expired JPS6026080B2 (en) 1979-11-21 1979-11-21 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS6026080B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161397A (en) * 1984-01-27 1985-08-23 Mitsubishi Monsanto Chem Co Liquid phase epitaxial growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161397A (en) * 1984-01-27 1985-08-23 Mitsubishi Monsanto Chem Co Liquid phase epitaxial growth method
JPH0351674B2 (en) * 1984-01-27 1991-08-07 Mitsubishi Kasei Horitetsuku Kk

Also Published As

Publication number Publication date
JPS6026080B2 (en) 1985-06-21

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