JPS5673700A - Liquid phase epitaxially growing method - Google Patents
Liquid phase epitaxially growing methodInfo
- Publication number
- JPS5673700A JPS5673700A JP15169979A JP15169979A JPS5673700A JP S5673700 A JPS5673700 A JP S5673700A JP 15169979 A JP15169979 A JP 15169979A JP 15169979 A JP15169979 A JP 15169979A JP S5673700 A JPS5673700 A JP S5673700A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- grown
- melt
- gaalas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To obtain an element with superior luminous characteristics in a high yield by growing a GaAlAs layer on a GaAs substrate kept at a constant temp. from a melt provided with a temp. gradient and continuously growing layers of different electrically conductive type in the same furnace while cooling the substrate.
CONSTITUTION: Boat 3 holding four melt reservoirs 4, 5, 6, 7 is slidably set on slider 2 with GaAs substrate 1 fixed, and heater 8 is attached to the 1st reservoir 4 to provide a temp. difference (5°C/min) to a melt in reservoir 4. Reservoirs 4W7 are filled with blended melts 10W13, respectively. By relatively moving slider 2 and boat 3, a GaAlAs layer is grown on substrate 1, and while cooling substrate 1 at a predetermined rate, the 2nd P type layer of GaAlAs of different electrically conductive type is continuously grown on the layer. The 3d P type layer and the 4th N or P type layer are then grown by contact for a predetermined time. Thus, superior epitaxial growth is enabled without causing a chip crack during manufacture.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15169979A JPS6026080B2 (en) | 1979-11-21 | 1979-11-21 | Liquid phase epitaxial growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15169979A JPS6026080B2 (en) | 1979-11-21 | 1979-11-21 | Liquid phase epitaxial growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5673700A true JPS5673700A (en) | 1981-06-18 |
JPS6026080B2 JPS6026080B2 (en) | 1985-06-21 |
Family
ID=15524323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15169979A Expired JPS6026080B2 (en) | 1979-11-21 | 1979-11-21 | Liquid phase epitaxial growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6026080B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161397A (en) * | 1984-01-27 | 1985-08-23 | Mitsubishi Monsanto Chem Co | Liquid phase epitaxial growth method |
-
1979
- 1979-11-21 JP JP15169979A patent/JPS6026080B2/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161397A (en) * | 1984-01-27 | 1985-08-23 | Mitsubishi Monsanto Chem Co | Liquid phase epitaxial growth method |
JPH0351674B2 (en) * | 1984-01-27 | 1991-08-07 | Mitsubishi Kasei Horitetsuku Kk |
Also Published As
Publication number | Publication date |
---|---|
JPS6026080B2 (en) | 1985-06-21 |
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