JPS562639A - Liquid phase growth of multiple element semiconductor crystal - Google Patents

Liquid phase growth of multiple element semiconductor crystal

Info

Publication number
JPS562639A
JPS562639A JP7932479A JP7932479A JPS562639A JP S562639 A JPS562639 A JP S562639A JP 7932479 A JP7932479 A JP 7932479A JP 7932479 A JP7932479 A JP 7932479A JP S562639 A JPS562639 A JP S562639A
Authority
JP
Japan
Prior art keywords
liquid
dummy
composition
contact
boats
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7932479A
Other languages
Japanese (ja)
Other versions
JPS643051B2 (en
Inventor
Michiharu Ito
Kouji Shinohara
Mitsuo Yoshikawa
Hirokazu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7932479A priority Critical patent/JPS562639A/en
Publication of JPS562639A publication Critical patent/JPS562639A/en
Publication of JPS643051B2 publication Critical patent/JPS643051B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain high quality multiple element semiconductor crystals by employing boats having more number of liquid reservoirs than required number of growing layers and prevent variation of composition in the composition of dummy due to extraction of liquid phase at the time of melt-back. CONSTITUTION:The same liquid 10 as the buffer layer growing liquid 6 is stored in an excessive reservoirs 9, and arranged in front of the reservoir 1. The liquid 10 is brought into contact with the substrate 4, and the solution 6 is brought into contact with the dummy 5 to conduct melt- back. In this case the reservoir 2 for growing an active layer is isolated from the dummy 5 so that the dummy 5 is not dissolved in the liquid 7. Then, the boats are moved to bring the liquid 6 into contact with the substrate 4, the furnace temperature is lowered to form new surface on the substrate 4 with buffer layer. Though the liquid 7 is brought into contact with the dummy 7, the furnate temperature is lowered so that the dummy is not melt back to the solution 7 to occur no change in composition. Subsequently, the boats are moved as the conventional manner, active layer and top layer are sequentially laminated thereon. According to this configuration, the active layer is obtained in the same composition as the liquid in accuracy immediate after forming the layers, and a laser light corresponding in wavelength accurately to the theoretical composition can be produced.
JP7932479A 1979-06-22 1979-06-22 Liquid phase growth of multiple element semiconductor crystal Granted JPS562639A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7932479A JPS562639A (en) 1979-06-22 1979-06-22 Liquid phase growth of multiple element semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7932479A JPS562639A (en) 1979-06-22 1979-06-22 Liquid phase growth of multiple element semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS562639A true JPS562639A (en) 1981-01-12
JPS643051B2 JPS643051B2 (en) 1989-01-19

Family

ID=13686693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7932479A Granted JPS562639A (en) 1979-06-22 1979-06-22 Liquid phase growth of multiple element semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS562639A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05983U (en) * 1991-06-24 1993-01-08 株式会社フクハラ Drain discharge device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05983U (en) * 1991-06-24 1993-01-08 株式会社フクハラ Drain discharge device
JP2517774Y2 (en) * 1991-06-24 1996-11-20 株式会社フクハラ Drain discharge device

Also Published As

Publication number Publication date
JPS643051B2 (en) 1989-01-19

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