JPS562639A - Liquid phase growth of multiple element semiconductor crystal - Google Patents
Liquid phase growth of multiple element semiconductor crystalInfo
- Publication number
- JPS562639A JPS562639A JP7932479A JP7932479A JPS562639A JP S562639 A JPS562639 A JP S562639A JP 7932479 A JP7932479 A JP 7932479A JP 7932479 A JP7932479 A JP 7932479A JP S562639 A JPS562639 A JP S562639A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- dummy
- composition
- contact
- boats
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain high quality multiple element semiconductor crystals by employing boats having more number of liquid reservoirs than required number of growing layers and prevent variation of composition in the composition of dummy due to extraction of liquid phase at the time of melt-back. CONSTITUTION:The same liquid 10 as the buffer layer growing liquid 6 is stored in an excessive reservoirs 9, and arranged in front of the reservoir 1. The liquid 10 is brought into contact with the substrate 4, and the solution 6 is brought into contact with the dummy 5 to conduct melt- back. In this case the reservoir 2 for growing an active layer is isolated from the dummy 5 so that the dummy 5 is not dissolved in the liquid 7. Then, the boats are moved to bring the liquid 6 into contact with the substrate 4, the furnace temperature is lowered to form new surface on the substrate 4 with buffer layer. Though the liquid 7 is brought into contact with the dummy 7, the furnate temperature is lowered so that the dummy is not melt back to the solution 7 to occur no change in composition. Subsequently, the boats are moved as the conventional manner, active layer and top layer are sequentially laminated thereon. According to this configuration, the active layer is obtained in the same composition as the liquid in accuracy immediate after forming the layers, and a laser light corresponding in wavelength accurately to the theoretical composition can be produced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7932479A JPS562639A (en) | 1979-06-22 | 1979-06-22 | Liquid phase growth of multiple element semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7932479A JPS562639A (en) | 1979-06-22 | 1979-06-22 | Liquid phase growth of multiple element semiconductor crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS562639A true JPS562639A (en) | 1981-01-12 |
JPS643051B2 JPS643051B2 (en) | 1989-01-19 |
Family
ID=13686693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7932479A Granted JPS562639A (en) | 1979-06-22 | 1979-06-22 | Liquid phase growth of multiple element semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS562639A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05983U (en) * | 1991-06-24 | 1993-01-08 | 株式会社フクハラ | Drain discharge device |
-
1979
- 1979-06-22 JP JP7932479A patent/JPS562639A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05983U (en) * | 1991-06-24 | 1993-01-08 | 株式会社フクハラ | Drain discharge device |
JP2517774Y2 (en) * | 1991-06-24 | 1996-11-20 | 株式会社フクハラ | Drain discharge device |
Also Published As
Publication number | Publication date |
---|---|
JPS643051B2 (en) | 1989-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS562639A (en) | Liquid phase growth of multiple element semiconductor crystal | |
JPS5493380A (en) | Semiconductor light emitting device | |
GB1463648A (en) | Film growth process | |
JPS53105371A (en) | Crystal growing method for potassium arsenide | |
JPS5673700A (en) | Liquid phase epitaxially growing method | |
JPS547861A (en) | Liquid phase epitaxial growth method | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal | |
JP3151277B2 (en) | Liquid phase epitaxial growth method | |
JPS52106673A (en) | Crystal growing method and device thereof | |
JPS53100770A (en) | Production of epitaxial growth layer | |
JPS5319777A (en) | Semiconductor laser | |
JPS52115171A (en) | Liquid phase epitaxial growing method | |
JPS5488070A (en) | Multi-layer liquid-phase growth unit | |
JPS5358978A (en) | Growing method for crystal | |
JPS51142992A (en) | Semiconductor laser:crystal bring-up method | |
JPS5777095A (en) | Liquid phase epitaxial growing apparatus | |
JPS55138883A (en) | Method of fabricating photo-semiconductor device | |
JPS5316400A (en) | Production of piezoelectric oxide single crystal | |
JPS5434256A (en) | Production of liquid crystal display element | |
JPS5379774A (en) | Growth method in liquid phase | |
JPS5277584A (en) | Growing crystal | |
JPS5635414A (en) | Method of liquid phase growth | |
JPS5329750A (en) | Liquid crystal display device | |
JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
JPS5232669A (en) | Liquid-phase epitaxial growth method |